Abstract: A computer-implemented method includes receiving a request to provision a set of storage volumes for a server cluster, wherein the request includes an identifier for the server cluster and generating a provisioning work ticket for each storage volume in the set of storage volumes, each provisioning work ticket including the identifier for the server cluster. The provisioning work tickets are provided to a message broker. Multiple volume provisioning instances are executed such that at least two of the volume provisioning instances operate in parallel with each other and such that each volume provisioning instance receives a respective provisioning work ticket from the message broker and attempts to provision a respective storage volume of the set of storage volumes for the server cluster in response to receiving the volume provisioning work ticket.

Abstract: A system for cleaning at least one filter in a baghouse and an associated method for providing the system. The at least one filter separate a dirty gas chamber from a clean gas chamber, and filters at least one substance from a gas. The system includes a supply of compressed air and a blowpipe to direct the air at the at least one filter to dislodge a collected amount of the at least one substance from the at least one filter. The blowpipe has a cross-sectional flow area through which the compressed air flows. A valve controls provision of the compressed air. The valve has a cross-sectional flow area though which the compressed gas flows. The cross-sectional area of the valve is smaller than the cross-sectional area of the blowpipe to provide for air pressure at the valve to be greater than air pressure at the blowpipe.

Abstract: A system for cleaning at least one filter in a baghouse and an associated method for providing the system. The at least one filter separate a dirty gas chamber from a clean gas chamber, and filters at least one substance from a gas. The system includes a supply of compressed air and a blowpipe to direct the air at the at least one filter to dislodge a collected amount of the at least one substance from the at least one filter. The blowpipe has a cross-sectional flow area through which the compressed air flows. A valve controls provision of the compressed air. The valve has a cross-sectional flow area though which the compressed gas flows. The cross-sectional area of the valve is smaller than the cross-sectional area of the blowpipe to provide for air pressure at the valve to be greater than air pressure at the blowpipe.

Abstract: A method for optimizing an ion implantation, wherein a substrate is scanned in two dimensions through an ion beam. The method provides a process recipe comprising one or more of a current of an ion beam, a dosage of ions, and a number of substrate passes through the beam in a slow scan direction. The beam is profiled based on the process recipe, and a size of the beam is determined. One of a plurality of differing scan speeds in a fast scan direction is selected, based on a desired uniformity of the implantation and the process recipe. The process recipe is controlled, based on one or more of the desired uniformity, a throughput time for the substrate, a desired minimum ion beam current, and one or more substrate conditions. One of a plurality of speeds in a slow scan direction is selected, based on the dosage of the implantation.

Abstract: A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

Abstract: A method for optimizing an ion implantation, wherein a substrate is scanned in two dimensions through an ion beam. The method provides a process recipe comprising one or more of a current of an ion beam, a dosage of ions, and a number of substrate passes through the beam in a slow scan direction. The beam is profiled based on the process recipe, and a size of the beam is determined. One of a plurality of differing scan speeds in a fast scan direction is selected, based on a desired uniformity of the implantation and the process recipe. The process recipe is controlled, based on one or more of the desired uniformity, a throughput time for the substrate, a desired minimum ion beam current, and one or more substrate conditions. One of a plurality of speeds in a slow scan direction is selected, based on the dosage of the implantation.

Abstract: The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces one or more scan patterns on the workpiece that resemble the size, shape and/or other dimensional aspects of the workpiece. Further, the scan patterns are interleaved with one another and can continue to be produced until the entirety of the workpiece is uniformly implanted with ions.

Abstract: A communication device (100, 200) is adapted to participate in a primary communication on a communication channel with at least one other communication device (250); and simultaneously transmit an image to the at least one other communication device (250) or and alternative communication device using the communication channel or an alternative communication channel.

Abstract: The present invention facilitates semiconductor device fabrication by obtaining angle of incidence values and divergence of an ion beam normal to a plane of a scanned beam. A divergence detector comprising a mask and profiler/sensor is employed to obtain beamlets from the incoming ion beam and then to measure beam current at a number of vertical positions. These beam current measurements are then employed to provide the vertical angle of incidence values, which provide a vertical divergence profile that serves to characterize the ion beam. These values can be employed by an ion beam generation mechanism to perform adjustments on the generated ion beam or position of the workpiece if the values indicate deviation from desired values.

Abstract: The present invention is directed to aligning wafers within semiconductor fabrication tools. More particularly, one or more aspects of the present invention pertain to quickly and efficiently finding an alignment marking, such as an alignment notch, on a wafer to allow the wafer to be appropriately oriented within an alignment tool. Unlike conventional systems, the notch is located without firmly holding and spinning or rotating the wafer. Exposure to considerable backside contaminants is thereby mitigated and the complexity and/or cost associated with aligning the wafer is thereby reduced.

Abstract: The present invention is directed to modulating ion beam current in an ion implantation system to mitigate non-uniform ion implantations, for example. Multiple arrangements are revealed for modulating the intensity of the ion beam. For example, the volume or number of ions within the beam can be altered by biasing one or more different elements downstream of the ion source. Similarly, the dosage of ions within the ion beam can also be manipulated by controlling elements more closely associated with the ion source. In this manner, the implantation process can be regulated so that the wafer can be implanted with a more uniform coating of ions.

Abstract: The present invention is directed to accounting for crystal cut error data in ion implantation systems, thereby facilitating more accurate ion implantation. One or more aspects of the invention also consider possible shadowing effects that can result from features formed on the surface of a wafer being doped. According to one or more aspects of the invention, crystal cut error data and optionally feature data also are periodically fed forward in one or more ion implantation stages or systems to ascertain how to re-orient the ion beam with respect to the workpiece to achieve desired implantation results.

Abstract: Embodiments of methods, computer programs, and systems for adjusting time settings according to the invention are disclosed. One embodiment of the invention of the computer system includes a first processor (140) that maintains a first time as well as a communication medium (115) coupled to the first processor (140). The computer system also includes a second processor (125) that maintains a second time and is coupled to the communications medium (115). The first processor (140) is adapted to receive a first message and the second processor (125) is adapted to receive a second message. A first time is recorded when the first processor (140) receives the first message. A second time is recorded when the second processor (125) receives the second message. The first processor (140) is adapted to send a third message to the second processor (125). The second processor (125) is adapted to send a fourth message to the first processor (140) that includes information indicative of the recorded second time.