Abstract: This application relates to hardware based memory scrubbing. One disclosed embodiment may comprise a system that includes an engine, implemented in hardware, configured to initiate a request for data residing in associated memory. An error system is configured to detect errors in data that has been read from associated memory in response to the request for the data, the error system maintaining a log of entries corresponding to errors detected by the error system. An identifier is associated with each of the entries in the log that result from the request initiated by the engine to differentiate from other entries in the log.

Abstract: A method for optimizing an ion implantation, wherein a substrate is scanned in two dimensions through an ion beam. The method provides a process recipe comprising one or more of a current of an ion beam, a dosage of ions, and a number of substrate passes through the beam in a slow scan direction. The beam is profiled based on the process recipe, and a size of the beam is determined. One of a plurality of differing scan speeds in a fast scan direction is selected, based on a desired uniformity of the implantation and the process recipe. The process recipe is controlled, based on one or more of the desired uniformity, a throughput time for the substrate, a desired minimum ion beam current, and one or more substrate conditions. One of a plurality of speeds in a slow scan direction is selected, based on the dosage of the implantation.

Abstract: A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

Abstract: A method for optimizing an ion implantation, wherein a substrate is scanned in two dimensions through an ion beam. The method provides a process recipe comprising one or more of a current of an ion beam, a dosage of ions, and a number of substrate passes through the beam in a slow scan direction. The beam is profiled based on the process recipe, and a size of the beam is determined. One of a plurality of differing scan speeds in a fast scan direction is selected, based on a desired uniformity of the implantation and the process recipe. The process recipe is controlled, based on one or more of the desired uniformity, a throughput time for the substrate, a desired minimum ion beam current, and one or more substrate conditions. One of a plurality of speeds in a slow scan direction is selected, based on the dosage of the implantation.

Abstract: The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces one or more scan patterns on the workpiece that resemble the size, shape and/or other dimensional aspects of the workpiece. Further, the scan patterns are interleaved with one another and can continue to be produced until the entirety of the workpiece is uniformly implanted with ions.

Abstract: A communication device (100, 200) is adapted to participate in a primary communication on a communication channel with at least one other communication device (250); and simultaneously transmit an image to the at least one other communication device (250) or and alternative communication device using the communication channel or an alternative communication channel.

Abstract: A connector module permits termination of cross-connect wires on one surface (front) and cable wires on an opposite surface (rear). The module exhibits a configuration, which permits test access and protector (i.e., protection module) mounting from the front surface. The jumper wires are inserted from a side surface through wire guides or channels that bring the wires from the side surface to the front surface where the wires can be terminated without impeding insertion and removal of protection modules from the front of the connector module. There is an intermediate surface below the front surface that is accessible from the front and recessed to allow protection modules to be installed completely below the terminated wires, allowing termination and maintenance of jumper wires after the protection module is installed from the front.

Abstract: A connector module permits termination of cross-connect wires on one surface (front) and cable wires on an opposite surface (rear). The module exhibits a configuration, which permits test access and protector (i.e., protection module) mounting from the front surface. The jumper wires are inserted from a side surface through wire guides or channels that bring the wires from the side surface to the front surface where the wires can be terminated without impeding insertion and removal of protection modules from the front of the connector module. There is an intermediate surface below the front surface that is accessible from the front and recessed to allow protection modules to be installed completely below the terminated wires, allowing termination and maintenance of jumper wires after the protection module is installed from the front.

Abstract: The present invention facilitates semiconductor device fabrication by obtaining angle of incidence values and divergence of an ion beam normal to a plane of a scanned beam. A divergence detector comprising a mask and profiler/sensor is employed to obtain beamlets from the incoming ion beam and then to measure beam current at a number of vertical positions. These beam current measurements are then employed to provide the vertical angle of incidence values, which provide a vertical divergence profile that serves to characterize the ion beam. These values can be employed by an ion beam generation mechanism to perform adjustments on the generated ion beam or position of the workpiece if the values indicate deviation from desired values.

Abstract: The present invention is directed to aligning wafers within semiconductor fabrication tools. More particularly, one or more aspects of the present invention pertain to quickly and efficiently finding an alignment marking, such as an alignment notch, on a wafer to allow the wafer to be appropriately oriented within an alignment tool. Unlike conventional systems, the notch is located without firmly holding and spinning or rotating the wafer. Exposure to considerable backside contaminants is thereby mitigated and the complexity and/or cost associated with aligning the wafer is thereby reduced.

Abstract: The present invention is directed to modulating ion beam current in an ion implantation system to mitigate non-uniform ion implantations, for example. Multiple arrangements are revealed for modulating the intensity of the ion beam. For example, the volume or number of ions within the beam can be altered by biasing one or more different elements downstream of the ion source. Similarly, the dosage of ions within the ion beam can also be manipulated by controlling elements more closely associated with the ion source. In this manner, the implantation process can be regulated so that the wafer can be implanted with a more uniform coating of ions.

Abstract: The present invention is directed to accounting for crystal cut error data in ion implantation systems, thereby facilitating more accurate ion implantation. One or more aspects of the invention also consider possible shadowing effects that can result from features formed on the surface of a wafer being doped. According to one or more aspects of the invention, crystal cut error data and optionally feature data also are periodically fed forward in one or more ion implantation stages or systems to ascertain how to re-orient the ion beam with respect to the workpiece to achieve desired implantation results.

Abstract: Embodiments of methods, computer programs, and systems for adjusting time settings according to the invention are disclosed. One embodiment of the invention of the computer system includes a first processor (140) that maintains a first time as well as a communication medium (115) coupled to the first processor (140). The computer system also includes a second processor (125) that maintains a second time and is coupled to the communications medium (115). The first processor (140) is adapted to receive a first message and the second processor (125) is adapted to receive a second message. A first time is recorded when the first processor (140) receives the first message. A second time is recorded when the second processor (125) receives the second message. The first processor (140) is adapted to send a third message to the second processor (125). The second processor (125) is adapted to send a fourth message to the first processor (140) that includes information indicative of the recorded second time.

Abstract: A computer implemented expert securities portfolio investment management system which operates as Registered Investment Advisor. The system automatically defines personal customer objectives, designs individualized investment portfolios, adjusts portfolios for economic environment, researches and selects specific securities, evaluates and determines the proper time to buy and sell customer securities, generates orders to buy and sell customer securities, updates customer account information and provides tax and performance reports. Research data and personal account information are updated on a timely, periodic basis.

Abstract: Method and apparatus for introducing particles into living cells. Fluorescently-stained human chromosomes are introduced into cultured, mitotic Chinese hamster cells using electromicroinjection. The recipient cells frequently survived the physiological perturbation imposed by a successful chromosome injection. Successfully injected recipient cells maintained viability as evidenced by their ability to be expanded.The technique relies on the surface charge of fluorescently stained chromosomes and their ability to be attracted and repelled to and from the tip of a micropipette. The apparatus includes a micropipette having a tip suitable for piercing the membrane of a target cell and an electrode inserted into the lumen thereof. The target cells and suspended particles are located in an electrically conducted solution, and the lumen of the micropipette is filled with an electrically conducting solution which contacts the electrode located therein.