Abstract: An optoelectronic switch comprising: a first plurality of detector remodulators (DRMs) (C3, D1), each DRM having an integer number M of optical inputs and an integer number N of optical outputs; a second plurality of DRMs (C7, D5), each DRM having N optical inputs and M optical outputs; a passive optical switch fabric (C4+C5+C6, D2+D3+D4) connecting the N optical outputs of each of the first plurality of DRMs with the N optical inputs of each of the second plurality of DRMs, the path of an optical signal through the optical switch fabric depending upon its wavelength; wherein each DRM (C3, D1) of the first plurality of DRMs is configured to act as a tunable wavelength converter to select the desired path of an optical signal through the optical switch fabric (C4+C5+C6, D2+D3+D4); and wherein each of the first plurality of DRMs (C3, D1) includes a concentrator, the concentrator configured to aggregate optical signals received from any of the M inputs of that DRM and to buffer them according to the one of the p

Abstract: The present invention provides an optoelectronic switch for transferring an optical signal from an input device to an output device, the optoelectronic switch including an array of interconnected switch modules, which are interconnected by an interconnecting fabric. The switch modules are arranged in an N-dimensional array, the ith dimension having a size Ri (i=1, 2, . . . , N), each switch module having an associated set of coordinates giving its location with respect to each of the N dimensions. Each switch module is a member of N such sub-arrays Si, each sub-array Si comprising Ri switch modules whose coordinates differ only in respect of their location in the ith dimension, and each of the N sub-arrays being associated with a different dimension.

Abstract: A switch module and optoelectronic switch incorporating the same. The optoelectronic switch includes an N-dimensional array of switch modules arranged in a topology in which each switch module is a member of N sub-arrays, the sub-arrays defined with reference to the coordinates of the constituent switch modules, and wherein all of the members of each sub-array are connected by an active switch, which in some embodiments may be an optical active switch or an electronic active switch.

Abstract: A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end, wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium, the phase-tunable waveguide platform comprising: a first resonator and a second resonator; at least one resonator being a phase-tunable resonator; wherein the first resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter; and wherein the second resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter.

Abstract: A silicon-on-insulator chip including an arrayed waveguide grating (AWG) and an array of detector remodulators (DRMs) in a planar arrangement with the AWG such that the modulators or modulators and detectors of said DRMs are located within the same plane as the waveguides of the AWG; and wherein each DRM is located at an input or output of the AWG.

Abstract: A switch module and optoelectronic switch incorporating the same. The optoelectronic switch includes an N-dimensional array of switch modules arranged in a topology in which each switch module is a member of N sub-arrays, the sub-arrays defined with reference to the coordinates of the constituent switch modules, and wherein all of the members of each sub-array are connected by an active switch, which in some embodiments may be an optical active switch or an electronic active switch.

Abstract: A detector remodulator comprising a silicon on insulator (SOI) waveguide platform including: a detector coupled to a first input waveguide; a modulator coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; and wherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide.

Abstract: An optoelectronic switch comprising: N switch modules, where N is an integer; and an optical full-mesh interconnect; each switch module comprising: M client facing input ports, and M output facing ports, M being an integer which is either equal to or not equal to N; a pre-mesh AWG, the pre-mesh AWG having M inputs and N outputs, each of the N outputs connected to a respective input on the optical full-mesh interconnect; a post-mesh AWG, the post-mesh AWG having N inputs and M outputs, each of the N inputs connected to a respective output of the optical full-mesh interconnect and each of the M outputs for communicating a signal to one or more of the M outputs of the switch module; and a first array of Detector Remodulators (DRMs) located before the pre-mesh AWG, each DRM of the first array configured to receive a signal from an input of the switch module and to regenerate and/or change the wavelength of the received signal to produce a DRM output, the DRM output forming an input at a respective port of the pre

Abstract: A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end, wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium, the phase-tunable waveguide platform comprising: a first resonator and a second resonator; at least one resonator being a phase-tunable resonator; wherein the first resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter; and wherein the second resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter.

Abstract: An optical waveguide device comprising: one or more photonic chips, the one or more photonic chips including: a first portion of a photonic chip comprising an array of first components, each of the first components having an optical input and an electrical output; and a second portion of a photonic chip comprising an array of second components, each of the second components configured to receive an electrical input; the optical waveguide device further comprising: an integrated circuit; the integrated circuit forming an electrical bridge between the electrical outputs of the first components and respective electrical inputs of the second components; wherein the integrated circuit is directly mounted onto the one or more photonic chips; and/or wherein the integrated circuit is located between the first portion of a photonic chip and the second portion of a photonic chip.

Abstract: An optoelectronic switch comprising: a first plurality of detector remodulators (DRMs) (C3, D1), each DRM having an integer number M of optical inputs and an integer number N of optical outputs; a second plurality of DRMs (C7, D5), each DRM having N optical inputs and M optical outputs; a passive optical switch fabric (C4+C5+C6, D2+D3+D4) connecting the N optical outputs of each of the first plurality of DRMs with the N optical inputs of each of the second plurality of DRMs, the path of an optical signal through the optical switch fabric depending upon its wavelength; wherein each DRM (C3, D1) of the first plurality of DRMs is configured to act as a tunable wavelength converter to select the desired path of an optical signal through the optical switch fabric (C4+C5+C6, D2+D3+D4); and wherein each of the first plurality of DRMs (C3, D1) includes a concentrator, the concentrator configured to aggregate optical signals received from any of the M inputs of that DRM and to buffer them according to the one of the p

Abstract: An optoelectronic switch comprising: N switch modules, where N is an integer; and an optical full-mesh interconnect; each switch module comprising: M client facing input ports, and M output facing ports, M being an integer which is either equal to or not equal to N; a pre-mesh AWG, the pre-mesh AWG having M inputs and N outputs, each of the N outputs connected to a respective input on the optical full-mesh interconnect; a post-mesh AWG, the post-mesh AWG having N inputs and M outputs, each of the N inputs connected to a respective output of the optical full-mesh interconnect and each of the M outputs for communicating a signal to one or more of the M outputs of the switch module; and a first array of Detector Remodulators (DRMs) located before the pre-mesh AWG, each DRM of the first array configured to receive a signal from an input of the switch module and to regenerate and/or change the wavelength of the received signal to produce a DRM output, the DRM output forming an input at a respective port of the pre

Abstract: A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end, wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium, the phase-tunable waveguide platform comprising: a first resonator and a second resonator; at least one resonator being a phase-tunable resonator; wherein the first resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter; and wherein the second resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter.

Abstract: A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium; wherein the phase-tunable waveguide platform includes a first Distributed Bragg Reflector (DBR) and a second Distributed Bragg Reflector (DBR); at least one of the Distributed Bragg Reflectors having a comb reflectance spectrum; and wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium.

Abstract: A detector remodulator comprising a silicon on insulator (SOI) waveguide platform including: a detector coupled to a first input waveguide; a modulator coupled to a second input waveguide and an output waveguide; and an electrical circuit connecting the detector to the modulator; wherein the detector, modulator, second input waveguide and output waveguide are arranged within the same horizontal plane as one another; and wherein the modulator includes a modulation waveguide region at which a semiconductor junction is set horizontally across the waveguide.

Abstract: A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium; wherein the phase-tunable waveguide platform includes a first Distributed Bragg Reflector (DBR) and a second Distributed Bragg Reflector (DBR); at least one of the Distributed Bragg Reflectors having a comb reflectance spectrum; and wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium.

Abstract: A wavelength tunable silicon-on-insulator (SOI) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end, wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium, the phase-tunable waveguide platform comprising: a first resonator and a second resonator; at least one resonator being a phase-tunable resonator; wherein the first resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter; and wherein the second resonator is any one of: an MMI device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a Fabry-Perot filter; a ring resonator; or a waveguide Fabry-Perot filter.