Abstract: 3D integrated circuit packages with window interposers and methods to form such semiconductor packages are described. For example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer having a window is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in the window of the interposer and interconnected to the top semiconductor die. In another example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in a same plane as the interposer and interconnected to the top semiconductor die.

Abstract: A 3D interconnect structure and method of manufacture are described in which a through-silicon vias (TSVs) and metal redistribution layers (RDLs) are formed using a dual damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and etch stop layer during the process flow.

Abstract: 3D integrated circuit packages with window interposers and methods to form such semiconductor packages are described. For example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer having a window is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in the window of the interposer and interconnected to the top semiconductor die. In another example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in a same plane as the interposer and interconnected to the top semiconductor die.

Abstract: An embodiment includes a semiconductor structure comprising: a frontend portion including a device layer; a backend portion including a bottom metal layer, a top metal layer, and intermediate metal layers between the bottom and top metal layers; wherein (a) the top metal layer includes a first thickness that is orthogonal to the horizontal plane in which the top metal layer lies, the bottom metal layer includes a second thickness; and the intermediate metal layers includes a third thickness; and (b) the first thickness is greater than or equal to a sum of the second and third thicknesses. Other embodiments are described herein.

Abstract: 3D integrated circuit packages with window interposers and methods to form such semiconductor packages are described. For example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer having a window is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in the window of the interposer and interconnected to the top semiconductor die. In another example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer is disposed between and interconnected to the substrate and the top semiconductor die. A bottom semiconductor die is disposed in a same plane as the interposer and interconnected to the top semiconductor die.

Abstract: A 3D interconnect structure and method of manufacture are described in which a through-silicon vias (TSVs) and metal redistribution layers (RDLs) are formed using a dual damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and etch stop layer during the process flow.

Abstract: A 3D interconnect structure and method of manufacture are described in which metal redistribution layers (RDLs) are integrated with through-silicon vias (TSVs) and using a single damascene type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and polish stop layer during the process flow.