Abstract: The present invention is directed to a system, method and software program product for calculating metrological data (e.g. layer thicknesses and depths of recesses and trenches) on a surface or structure, such as a semiconductor wafer. The present method does not require knowledge of the reflectivity or transmissivity of the surface or structure, but only a quantity related to the reflectivity or transmissivity linear transformation needs to be known. Initially, a simplified optical model for the process is constructed using as many parameters as necessary for calculating the surface reflectivity of the discrete regions on the wafer. Reflectivity data are collected from the surface of a wafer using, for instance, in-situ monitoring, and nominal reflectivity is determined from the ratio of the current spectrum to a reference spectrum. The reference spectrum is taken from a reference wafer consisting entirely of a material in which the reflection properties are well characterized.

Abstract: Apparatus characterizes the quality of microelectronic features using broadband white light. A highly collimated light source illuminates an area of a first wafer using broadband multi-spectral light. The angular distribution of the light scattered from the first wafer is then measured. Generally, the angle of the light source, detector, or both is altered and an angular distribution measurement taken at each angle, producing a scatter signature for the first wafer. Finally, the scatter signature of the first wafer is compared with a known scatter signature of a second wafer of good quality to determine the quality of the first wafer.

Abstract: Apparatus characterizes the quality of microelectronic features using broadband white light. A highly collimated light source illuminates an area of a first wafer using broadband multi-spectral light. The angular distribution of the light scattered from the first wafer is then measured. Generally, the angle of the light source, detector, or both is altered and an angular distribution measurement taken at each angle, producing a scatter signature for the first wafer. Finally, the scatter signature of the first wafer is compared with a known scatter signature of a second wafer of good quality to determine the quality of the first wafer.

Abstract: Disclosed is a method for characterizing the quality of microelectronic features using broadband white light. A highly collimated light source illuminates an area of a first wafer using broadband multi-spectral light. The angular distribution of the light scattered from the first wafer is then measured. Generally, the angle of the light source, detector, or both is altered and an angular distribution measurement taken at each angle, producing a scatter signature for the first wafer. Finally, the scatter signature of the first wafer is compared with a known scatter signature of a second wafer of good quality to determine the quality of the first wafer.