Abstract: A wear leveling solution is proposed for use in a storage device based on a flash memory. The flash memory includes a plurality of physical blocks, which are adapted to be erased individually. A corresponding method starts with the step for erasing one of the physical blocks. One of the physical blocks being allocated for storing data is selected; this operation is performed in response to the reaching of a threshold by an indication of a difference between a number of erasures of the erased physical block and a number of erasures of the selected physical block. At least the data of the selected physical block being valid is copied into the erased physical block. The selected physical block is then erased.

Abstract: A solution for managing a storage device based on a flash memory is proposed. A corresponding method starts with the step for mapping a logical memory space of the storage device (including a plurality of logical blocks) on a physical memory space of the flash memory (including a plurality of physical blocks, which are adapted to be erased individually). The physical blocks include a set of first physical blocks (corresponding to the logical blocks) and a set of second—or spare—physical blocks (for replacing each bad physical block that is unusable). The method continues by detecting each bad physical block. Each bad physical block is then discarded, so to prevent using the bad physical block for mapping the logical memory space.

Abstract: A method controls write/erase operations in a memory device including memory blocks that are exposed to wear as a result of repeated erasures. The method includes: storing the erase counts of the memory blocks, creating a chain storing the erase counts of the memory blocks that are available for writing at a certain instant of time, and selecting for writing, out of the blocks in the memory device available for writing, the block having the lowest erase count in the chain.

Abstract: A method controls write/erase operations in a memory device including memory blocks that are exposed to wear as a result of repeated erasures. The method includes: storing the erase counts of the memory blocks, creating a chain storing the erase counts of the memory blocks that are available for writing at a certain instant of time, and selecting for writing, out of the blocks in the memory device available for writing, the block having the lowest erase count in the chain.