Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: The present invention is in the field of antimicrobial compositions, e.g. for personal care. In particular, the invention relates to antimicrobial compositions for oral care, such as toothpastes, comprising antimicrobial particles and a nonionic triblock copolymer. Accordingly, the present invention relates to antimicrobial compositions comprising a modified clay particle, the particle comprising an antimicrobial compound and a clay particle, and at least one a nonionic triblock copolymer. The invention further relates to the uses and methods of the antimicrobial compositions of the invention.

Abstract: The present invention relates to a personal care composition for protection of skin against undesirable bacteria. The present invention is especially useful in formulating compositions which ensure growth of skin commensal bacteria like S. epidermidis while inhibiting growth of harmful bacteria like E. coli, S. aureus among others. The present invention which comprises a mixture of very select amino acids thus provides for microbiome balancing on the skin.

Abstract: The invention is directed to a sanitizing composition that comprises at least 80% by weight water, and a cationic surfactant. The composition provides superior antimicrobial benefits while simultaneously delivering excellent antiviral activity after being topically applied and even when formulated with little to no ethanol.

Abstract: The present invention relates to an antimicrobial composition, more particularly to a method and a composition to prevent or treat malodour, especially body malodor. This is achieved through a composition that comprises alkyl substituted dihydroxy benzene in combination with thymol or terpineol. The composition is also seen to have anti-acne benefits.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over a top of the fin and laterally adjacent sidewalls of the fin. An N-type gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the N-type gate electrode comprising a P-type metal layer on the gate dielectric layer, and an N-type metal layer on the P-type metal layer. A first N-type source or drain region is adjacent a first side of the gate electrode. A second N-type source or drain region is adjacent a second side of the gate electrode, the second side opposite the first side.

Abstract: The present invention is in the field of antimicrobial compositions, e.g. for personal care. In particular, the invention relates to antimicrobial compositions for oral care, such as toothpastes, comprising antimicrobial particles and biphenol. Accordingly, the present invention relates to antimicrobial compositions comprising a modified clay particle, the particle comprising an antimicrobial compound and a clay particle, and at least one biphenol compound. The invention further relates to the uses and methods of the antimicrobial compositions of the invention.

Abstract: The present invention is in the field of antimicrobial compositions, e.g. for personal care. In particular, the invention relates to antimicrobial compositions for oral care, such as toothpastes, comprising antimicrobial particles and a nonionic triblock copolymer. Accordingly, the present invention relates to antimicrobial compositions comprising a modified clay particle, the particle comprising an antimicrobial compound and a clay particle, and at least one a nonionic triblock copolymer. The invention further relates to the uses and methods of the antimicrobial compositions of the invention.

Abstract: The present invention relates to a method and a composition to prevent or treat acne by selective inhibition of P. acnes bacteria. The method comprises treating skin with P. acnes phage-derived endolysins and nucleic acid molecules encoding the same C in combination with selective essential oils.

Abstract: The present invention relates to an antimicrobial composition. The present invention provides an antimicrobial composition comprising at least one biphenol and monohydric non-phenolic alcohol in certain amounts. The antimicrobial composition provides synergistic antimicrobial benefit, particularly synergistic antiviral benefit.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over a top of the fin and laterally adjacent sidewalls of the fin. An N-type gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the N-type gate electrode comprising a P-type metal layer on the gate dielectric layer, and an N-type metal layer on the P-type metal layer. A first N-type source or drain region is adjacent a first side of the gate electrode. A second N-type source or drain region is adjacent a second side of the gate electrode, the second side opposite the first side.

Abstract: The present invention relates to an antimicrobial composition. The present invention provides an antimicrobial composition comprising at least one biphenol; and at least one antimicrobial quaternary ammonium compound, wherein the biphenol is a diallylbiphenol.

Abstract: The present disclosure is generally related to methods for combining chemotherapy and immunotherapy for the treatment of a cancer.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over a top of the fin and laterally adjacent sidewalls of the fin. An N-type gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the N-type gate electrode comprising a P-type metal layer on the gate dielectric layer, and an N-type metal layer on the P-type metal layer. A first N-type source or drain region is adjacent a first side of the gate electrode. A second N-type source or drain region is adjacent a second side of the gate electrode, the second side opposite the first side.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: The present invention relates to an antimicrobial composition and more particularly an antimicrobial composition for leave-on applications. The present invention discloses an antimicrobial composition comprising; a) 0.01 to 2% by weight of thymol; b) 0.01 to 2% by weight of terpineol; and c) 0.1 to 2% by weight of a cationic phospholipid complex.

Abstract: The present disclosure is generally related to methods for combining chemotherapy and immunotherapy for the treatment of a cancer. The methods also relate to generating a drug-resistant cytotoxic immune cell line and uses thereof in conjunction with cytotoxic drugs.