Abstract: Integrated circuit structures having trench contact flyover structures, and methods of fabricating integrated circuit structures having trench contact flyover structures, are described. For example, an integrated circuit structure includes a plurality of horizontally stacked nanowires or a fin. A gate structure is over the plurality of horizontally stacked nanowires or the fin. An epitaxial source or drain structure is at an end of the plurality of horizontally stacked nanowires or the fin. A conductive trench contact structure has a first portion laterally spaced apart from the epitaxial source or drain structure, a second portion vertically over the epitaxial source or drain structure, and a third portion between the first portion and the second portion. A dielectric plug is laterally between the epitaxial source or drain structure and the first portion of the conductive trench contact structure, wherein the third portion of the conductive trench contact structure is vertically over the dielectric plug.

Abstract: Integrated circuit structures having uniform grid metal gate and trench contact cut, and methods of fabricating integrated circuit structures having uniform grid metal gate and trench contact cut, are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires. A gate electrode is over the vertical stack of horizontal nanowires. A conductive trench contact is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A first dielectric cut plug structure extends through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact. A second dielectric cut plug structure extends through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact, the second dielectric cut plug structure laterally spaced apart from and parallel with the first dielectric cut plug structure.

Abstract: The present invention relates to an antimicrobial composition, more particularly to a method and a composition to prevent or treat acne. This is achieved through a composition that comprises alkyl substituted dihydroxy benzene in combination with select substituted phenol compound. The composition is also seen to have anti-malodour benefits.

Abstract: The present disclosure is generally related to methods for combining chemotherapy and immunotherapy for the treatment of a cancer.

Abstract: Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for creating flyover trench connectors within a transistor structure, where a first portion of the trench connector is electrically coupled with a first epitaxial structure and where a second portion of the trench connector extends above but is not electrically coupled with a second epitaxial structure. Other embodiments may be described and/or claimed.

Abstract: Devices, transistor structures, systems, and techniques are described herein related to coupling backside and frontside metallization layers that are on opposite sides of a device layer. A device includes a transistor having semiconductor structures extending between a source and a drain, and a gate between the source and drain, a bridge via extending between a frontside metallization over the transistor and a backside metallization below the transistor, and a thin insulative liner between the bridge via and components of the transistor.

Abstract: The present invention relates to an antimicrobial composition, more particularly to a method and a composition to prevent or mitigate bodily malodour, especially present in human axilla. This is achieved by a composition that comprises a vitamin B3 compound or derivative thereof along with pectin.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: The present invention is in the field of antimicrobial compositions, e.g. for personal care. In particular, the invention relates to antimicrobial compositions for oral care, such as toothpastes, comprising antimicrobial particles and a nonionic triblock copolymer. Accordingly, the present invention relates to antimicrobial compositions comprising a modified clay particle, the particle comprising an antimicrobial compound and a clay particle, and at least one a nonionic triblock copolymer. The invention further relates to the uses and methods of the antimicrobial compositions of the invention.

Abstract: The present invention relates to a personal care composition for protection of skin against undesirable bacteria. The present invention is especially useful in formulating compositions which ensure growth of skin commensal bacteria like S. epidermidis while inhibiting growth of harmful bacteria like E. coli, S. aureus among others. The present invention which comprises a mixture of very select amino acids thus provides for microbiome balancing on the skin.

Abstract: The invention is directed to a sanitizing composition that comprises at least 80% by weight water, and a cationic surfactant. The composition provides superior antimicrobial benefits while simultaneously delivering excellent antiviral activity after being topically applied and even when formulated with little to no ethanol.

Abstract: The present invention relates to an antimicrobial composition, more particularly to a method and a composition to prevent or treat malodour, especially body malodor. This is achieved through a composition that comprises alkyl substituted dihydroxy benzene in combination with thymol or terpineol. The composition is also seen to have anti-acne benefits.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over a top of the fin and laterally adjacent sidewalls of the fin. An N-type gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the N-type gate electrode comprising a P-type metal layer on the gate dielectric layer, and an N-type metal layer on the P-type metal layer. A first N-type source or drain region is adjacent a first side of the gate electrode. A second N-type source or drain region is adjacent a second side of the gate electrode, the second side opposite the first side.

Abstract: The present invention is in the field of antimicrobial compositions, e.g. for personal care. In particular, the invention relates to antimicrobial compositions for oral care, such as toothpastes, comprising antimicrobial particles and biphenol. Accordingly, the present invention relates to antimicrobial compositions comprising a modified clay particle, the particle comprising an antimicrobial compound and a clay particle, and at least one biphenol compound. The invention further relates to the uses and methods of the antimicrobial compositions of the invention.

Abstract: The present invention is in the field of antimicrobial compositions, e.g. for personal care. In particular, the invention relates to antimicrobial compositions for oral care, such as toothpastes, comprising antimicrobial particles and a nonionic triblock copolymer. Accordingly, the present invention relates to antimicrobial compositions comprising a modified clay particle, the particle comprising an antimicrobial compound and a clay particle, and at least one a nonionic triblock copolymer. The invention further relates to the uses and methods of the antimicrobial compositions of the invention.

Abstract: The present invention relates to a method and a composition to prevent or treat acne by selective inhibition of P. acnes bacteria. The method comprises treating skin with P. acnes phage-derived endolysins and nucleic acid molecules encoding the same C in combination with selective essential oils.

Abstract: The present invention relates to an antimicrobial composition. The present invention provides an antimicrobial composition comprising at least one biphenol and monohydric non-phenolic alcohol in certain amounts. The antimicrobial composition provides synergistic antimicrobial benefit, particularly synergistic antiviral benefit.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.