Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over a top of the fin and laterally adjacent sidewalls of the fin. An N-type gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the N-type gate electrode comprising a P-type metal layer on the gate dielectric layer, and an N-type metal layer on the P-type metal layer. A first N-type source or drain region is adjacent a first side of the gate electrode. A second N-type source or drain region is adjacent a second side of the gate electrode, the second side opposite the first side.

Abstract: The present invention relates to an antimicrobial composition. The present invention provides an antimicrobial composition comprising at least one biphenol; and at least one antimicrobial quaternary ammonium compound, wherein the biphenol is a diallylbiphenol.

Abstract: The present disclosure is generally related to methods for combining chemotherapy and immunotherapy for the treatment of a cancer.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over a top of the fin and laterally adjacent sidewalls of the fin. An N-type gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the N-type gate electrode comprising a P-type metal layer on the gate dielectric layer, and an N-type metal layer on the P-type metal layer. A first N-type source or drain region is adjacent a first side of the gate electrode. A second N-type source or drain region is adjacent a second side of the gate electrode, the second side opposite the first side.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: The present invention relates to an antimicrobial composition and more particularly an antimicrobial composition for leave-on applications. The present invention discloses an antimicrobial composition comprising; a) 0.01 to 2% by weight of thymol; b) 0.01 to 2% by weight of terpineol; and c) 0.1 to 2% by weight of a cationic phospholipid complex.

Abstract: The present disclosure is generally related to methods for combining chemotherapy and immunotherapy for the treatment of a cancer. The methods also relate to generating a drug-resistant cytotoxic immune cell line and uses thereof in conjunction with cytotoxic drugs.

Abstract: The present disclosure is generally related to methods for combining chemotherapy and immunotherapy for the treatment of a cancer. The methods also relate to generating a drug-resistant cytotoxic immune cell line and uses thereof in conjunction with cytotoxic drugs.

Abstract: The present disclosure is generally related to methods for combining chemotherapy and immunotherapy for the treatment of a cancer.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over a top of the fin and laterally adjacent sidewalls of the fin. An N-type gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the N-type gate electrode comprising a P-type metal layer on the gate dielectric layer, and an N-type metal layer on the P-type metal layer. A first N-type source or drain region is adjacent a first side of the gate electrode. A second N-type source or drain region is adjacent a second side of the gate electrode, the second side opposite the first side.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: The present invention relates to an antimicrobial composition and more particularly an antimicrobial composition for leave-on applications. The present invention discloses an antimicrobial composition comprising; a) 0.01 to 2% by weight of thymol; b) 0.01 to 2% by weight of terpineol; and c) 0.1 to 2% by weight of a cationic phospholipid complex.

Abstract: The present invention relates to an antimicrobial cleansing composition and a method of cleaning or disinfecting a surface. The invention more particularly relates to an antimicrobial cleansing composition that provides antimicrobial efficacy in cleaning applications having relatively short contact times. An object of the present invention is to provide an antimicrobial cleansing composition that exhibits biocidal activity in relatively short contact times of 1 minute to 10 seconds. Another object of the present invention is to provide an antimicrobial cleansing composition which exhibits antimicrobial activity at very low concentration of silver compound. A further object of the present invention is to provide an antimicrobial cleansing composition which has consumer-acceptable aesthetic properties. A still further object of the present invention is to provide an antimicrobial composition that is highly efficacious against a broad spectrum of gram positive and gram negative bacteria.

Abstract: The present invention relates to an antimicrobial cleansing composition and a method of cleaning or disinfecting a surface. The invention more particularly relates to an antimicrobial cleansing composition that provides antimicrobial efficacy in cleaning applications having relatively short contact times. An object of the present invention is to provide an antimicrobial cleansing composition that exhibits biocidal activity in relatively short contact times of 1 minute to 10 seconds. Another object of the present invention is to provide an antimicrobial cleansing composition which exhibits antimicrobial activity at very low concentration of silver compound. A further object of the present invention is to provide an antimicrobial cleansing composition which has consumer-acceptable aesthetic properties. A still further object of the present invention is to provide an antimicrobial composition that is highly efficacious against a broad spectrum of gram positive and gram negative bacteria.

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer on a substrate; an opening in the dielectric layer, wherein the opening has opening sidewalls and exposes a conductive region of at least one of the substrate and an additional interconnect structure; a first atomic layer deposition (ALD) layer on the conductive region and the opening sidewalls; a second ALD layer on a portion of the first ALD layer, and a third ALD layer within the opening and on the first ALD layer. Other embodiments are described herein.

Abstract: An embodiment includes a metal interconnect structure, comprising: a dielectric layer on a substrate; an opening in the dielectric layer, wherein the opening has opening sidewalls and exposes a conductive region of at least one of the substrate and an additional interconnect structure; a first atomic layer deposition (ALD) layer on the conductive region and the opening sidewalls; a second ALD layer on a portion of the first ALD layer, and a third ALD layer within the opening and on the first ALD layer. Other embodiments are described herein.

Abstract: The present disclosure is generally related to methods for combining chemotherapy and immunotherapy for the treatment of a cancer.

Abstract: The invention relates to an antimicrobial composition. The invention more particularly relates to a composition comprising a combination of two materials that interact synergistically to provide virus kill in a short time. The present inventors have found that a combination of a cationic surfactant e.g. benzalkonium chloride and an extract of a rhizome viz. Curcuma or its active ingredient viz. curcumin provide this fast antiviral action.