Patents by Inventor Anish Khandekar

Anish Khandekar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width
    Patent number: 8283708
    Abstract: Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion region in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of the one or more diffusion regions being less than about 40% greater than the first width.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: October 9, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Lequn Liu, Yongjun Jeff Hu, Anish A. Khandekar
  • Methods of semiconductor processing involving forming doped polysilicon on undoped polysilicon
    Patent number: 7943463
    Abstract: A number of methods are provided for semiconductor processing. One such method includes depositing a first precursor material on a surface at a particular temperature to form an undoped polysilicon. The method also includes depositing a second precursor material on a surface of the undoped polysilicon at substantially the same temperature, wherein the undoped polysilicon serves as a seed to accelerate forming a doped polysilicon.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: May 17, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Anish Khandekar, Ervin T. Hill, Jixin Yu, Jeffrey B. Hull
  • SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING DIFFUSION REGIONS OF REDUCED WIDTH
    Publication number: 20110068378
    Abstract: Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion region in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of at the one or more diffusion regions being less than about 40% greater than the first width.
    Type: Application
    Filed: September 18, 2009
    Publication date: March 24, 2011
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Lequn Liu, Yongjun Jeff Hu, Anish A. Khandekar
  • METHODS OF SEMICONDUCTOR PROCESSING INVOLVING FORMING DOPED POLYSILICON ON UNDOPED POLYSILICON
    Publication number: 20100255664
    Abstract: A number of methods are provided for semiconductor processing. One such method includes depositing a first precursor material on a surface at a particular temperature to form an undoped polysilicon. The method also includes depositing a second precursor material on a surface of the undoped polysilicon at substantially the same temperature, wherein the undoped polysilicon serves as a seed to accelerate forming a doped polysilicon.
    Type: Application
    Filed: April 2, 2009
    Publication date: October 7, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Anish Khandekar, Ervin T. Hill, Jixin Yu, Jeffrey B. Hull