Abstract: Techniques are disclosed relating to generating and validating a container for an application. A container for an application may an executable package that include the source code for the application along with the runtime information, system tools, system libraries, and settings for the application. A container validation procedure is determined for the container using a plurality of container validation routines. The container validation routines may reflect the role various validation entities have in validating the container and approving it for deployment. If the container successfully passes the container validation procedure, the container may be deployed on a computer system.

Abstract: Techniques are disclosed relating to generating and validating a container for an application. A container for an application may an executable package that include the source code for the application along with the runtime information, system tools, system libraries, and settings for the application. A container validation procedure is determined for the container using a plurality of container validation routines. The container validation routines may reflect the role various validation entities have in validating the container and approving it for deployment. If the container successfully passes the container validation procedure, the container may be deployed on a computer system.

Abstract: Techniques are disclosed relating to generating and validating a container for an application. A container for an application may an executable package that include the source code for the application along with the runtime information, system tools, system libraries, and settings for the application. A container validation procedure is determined for the container using a plurality of container validation routines. The container validation routines may reflect the role various validation entities have in validating the container and approving it for deployment. If the container successfully passes the container validation procedure, the container may be deployed on a computer system. In some computer systems, a server computer system and remote, client computer system work together to validate the container without the client computer system having to send any private client information to the server computer system.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.

Abstract: A method including receiving a digital promotion payload from a brand manufacturer for at least one branded consumer packaged good, the digital promotion payload including a digital promotion value associated with the branded consumer packaged good, is provided. The method includes receiving a bid request to the digital promotion engine, providing a bid response to the bid request, the bid response including the digital promotion payload, and receiving, from the supply side platform, a confirmation that the bid response has been selected from one or more bids from different digital advertising entities. The method includes providing a command to the supply side platform to deliver the digital promotion payload to a mobile device accessing a resource from the mobile display publisher, and loading the digital promotion value to a frequent shopper identification in response to a consumer interaction with the digital promotion payload detected from the mobile device.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.

Abstract: Techniques are disclosed relating to generating and validating a container for an application. A container for an application may an executable package that include the source code for the application along with the runtime information, system tools, system libraries, and settings for the application. A container validation procedure is determined for the container using a plurality of container validation routines. The container validation routines may reflect the role various validation entities have in validating the container and approving it for deployment. If the container successfully passes the container validation procedure, the container may be deployed on a computer system.

Abstract: Techniques are disclosed relating to generating and validating a container for an application. A container for an application may an executable package that include the source code for the application along with the runtime information, system tools, system libraries, and settings for the application. A container validation procedure is determined for the container using a plurality of container validation routines. The container validation routines may reflect the role various validation entities have in validating the container and approving it for deployment. If the container successfully passes the container validation procedure, the container may be deployed on a computer system. In some computer systems, a server computer system and remote, client computer system work together to validate the container without the client computer system having to send any private client information to the server computer system.

Abstract: Methods and apparatus for boosting ion energies are contemplated herein. In one embodiment, the methods and apparatus comprises a controller, a process chamber with a symmetrical plasma source configured to process a wafer, one or more very high frequency (VHF) sources, coupled to the process chamber, to generate plasma density and two or more frequency generators that generate low frequencies relative to the one or more VHF sources, coupled to a bottom electrode of the process chamber, the two or more low frequency generators configured to dissipate energy in the plasma sheath, wherein the controller controls the one or more VHF sources to generate a VHF signal and the two or more low frequency sources to generate two or more low frequency signals.

Abstract: Methods and apparatus for processing substrates are provided. In some embodiments, methods of processing substrates includes: (a) providing a process gas comprising a polymer-forming gas and an etching gas between a first electrode and a second electrode within the processing volume, wherein the first electrode is opposite the second electrode; (b) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and (c) adjusting the first voltage waveform to a second voltage waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.

Abstract: An electronic apparatus for providing an on-screen keyboard including a plurality of keys are provided. The electronic apparatus comprises a touch interface configured to receive a touch input of a user and a processor configured to, in response to the touch input being received though the touch interface, determine a touch area where the touch input is received, in response to the plurality of keys are included in the touch area, identify a key corresponding to a touch pattern of the user among the plurality of keys, and display the identified key on a display of the electronic apparatus.

Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.

Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.

Abstract: Methods and apparatus for processing substrates are provided. In some embodiments, methods of processing substrates includes: (a) providing a process gas comprising a polymer-forming gas and an etching gas between a first electrode and a second electrode within the processing volume, wherein the first electrode is opposite the second electrode; (b) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and (c) adjusting the first voltage waveform to a second voltage waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.

Abstract: Atomic layer etching using alternating passivation and etching processes is performed with an electron beam plasma source, in which the ion energy is set to a low level below the etch threshold of the material to be etched during passivation and to a higher level above the etch threshold during etching but below the etch threshold of the unpassivated material.

Abstract: A remote plasma source is enclosed by a pair of counter electrodes of conical or similar shape that are mirror images of one another and connected across a plasma power source.

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Abstract: An etch process gas is provided to a main process chamber having an electron beam plasma source, and during periodic passivation operations a remote plasma source provides passivation species to the main process chamber while ion energy is limited below an etch ion energy threshold. During periodic etch operations, flow from the remote plasma source is halted and ion energy is set above the etch threshold.