Abstract: A method may include presenting a user interface on a computing device including a first portion configured to receive a selection of a set of subjective attributes associated with financial goals of a user; and a second portion configured to receive a selection of a set of objective attributes the user including a demographic attribute of the user; inputting the set of objective attributes and subjective attributes into a machine learning model; in response to the inputting, receiving an output from the machine learning model; identifying a cluster identifier; querying a datastore using the cluster identifier to receive a set of quantitative financial attributes of a plurality of users associated with the cluster identifier; updating the user interface to present a comparison of the set of quantitative financial attributes of the plurality of users associated with the cluster identifier to the set of quantitative financial attributes for the user.

Abstract: A method may include receiving a request to create a stored group of users associated with a primary user, the primary user having a user profile stored on server device; in response, presenting a first user interface including a selection element configured to receive a selection of users to include in the stored group; and an input text element configured to receive a label for the stored group; based on data received in the selection element and input text element, generating the stored group; presenting a second user interface including: icon representations of each user in the stored group; and a selectable graphic element configured to present a permission modification interface; and in response to receiving input in the permission modification interface, updating access rights for an account of the accounts of the primary user.

Abstract: A method may include maintaining a user account of a user associated with a first service; presenting a user interface on a client device identifying a set of selectable services external to the server device; receiving a selection of a second service external to the server device; requesting login credentials of the a user account at the second service; transmitting an account access authorization request using the login credentials, requesting the user account of the user associated with the first service be given read and write permission to the user account at the second service; and in response to the request, receiving an authentication token from the second service granting read and write access to the user account associated with the second service via an interface presented by the first service.

Abstract: A pocket includes a body having a front side and a back side. The back side of the pocket has an adhesive material disposed over the back face. The adhesive material is covered by a removable wrapper that when removed exposes the adhesive on the back of the pocket. The pocket may then be secured to flat surface of a notebook, binder or the like by pressing the adhesive material into said surface. The pocket has a cavity that is accessible through an opening on the front side of the body. A stretchable lanyard cord is removably connected to the bottom of the pocket through a reinforced opening. The stretchable cord has a band at the distal end to receive a writing utensil. The pencil pocket is useful for tethering a writing utensil to a surface for easy access.

Abstract: An apparatus and method are provided for sampling the distal tube, fimbria and/or ovary, includes advancing a device into the peritoneal cavity and sampling material on or adjacent to the distal tube, fimbria or ovary.

Abstract: A system is provided for systematically checking for and retrieving data from a known, public system to a system inside company firewall restraints while being able to function automatically once initial set up is complete. This data is then processed and stored into an internal database for the express purpose of allowing timely access to stability and configuration information.

Abstract: The present invention relates to a bilayer cap structure for interconnect structures that comprise copper metallization or other conductive metallization. Such bilayer cap structure includes a first cap layer formed by an unbiased high density plasma (HDP) chemical vapor deposition process, and a second cap layer over the first cap layer, where the second cap layer is formed by a biased high density plasma (bHDP) chemical vapor deposition process. During the bHDP chemical vapor deposition process, a low AC bias power is applied to the substrate to increase the ion bombardment on the substrate surface and to induce resputtering of the capping material, thereby forming a seamless second cap layer with excellent reactive ion etching (RIE) selectivity.

Abstract: A series of Window screens are provided with queries to gather customer data for the customer's enterprise operations. Data on site locations, number of users, types of users and Application Programs utilized and their relationships are accumulated into a Configuration Session Database which serves as a foundation of the Customer's Profile which can later be used to configure a suitable design of Server Farms for the customer.

Abstract: A method and procedure is established for utilization in a Thin Client Sizing Tool which has established an optimized solution of one or more Server Farms to fit a customer's profile. Part of implementing this solution is the provision of establishing adequate memory for the Server Farm or group of Server Farms. A methodology is provided whereby each operating system is correlated to each User type which is correlated to each application and then increased by the number of particular User types and the number of applications involved in order to establish the total memory requirements for a Server Farm or Metafarm.

Abstract: A method is provided for generating a configuration solution such as for a Server Farm or a Server Metafarm which can be optimally designed and configured after information has been developed on the customer's profile and there has been calculated a base solution indicating the appropriate number of servers, proper disk space and memory requirements.

Abstract: A Thin Client Sizing Tool provides a method for developing a proposal for an optimized Server Farm, or collection of Server Farms, which will provide the most suitable configuration for each specialized enterprise of a customer.

Abstract: A Cellular Multi-Processor Serve provides partitions having different Operating Systems such as Windows, Unix OS2200 (Unisys), Master Control Program (Unisys) or other Operating Systems, which could be designated as OS-A or OS-B. The present method and system collects and scans availability and reliability information which involve non-windows partitions with respect to planned and unplanned stops, system starts and different categories of error conditions.

Abstract: A Thin Client Sizer, used to configure an optimal Server Farm, requires specific data regarding the category level of utilization, by each User, of each of the Applications available to the Server Farm. A method is presented for input to a Solution Configurator to select and categorize each User-Type User as to add in his utilization of each Application used in the Server Farm.

Abstract: A metallization insulating structure, having a substrate; a substantially fluorine free insulating layer formed on the substrate, having a height, hi; a fluorine containing insulating layer formed on the substantially fluorine free insulating layer, having a height hf.

Abstract: A method for sizing Server Farms and developing an Metafarm which allocates the optimum number of Users to each Server Farm in the complex while also providing an optimized configuration of Server Farms having a desired Availability Level and suitable redundancy to fulfill the requirements and needs in a customer's enterprise.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.