Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.

Abstract: A metallization insulating structure, having

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract: A fiber optic channel loop provides a transmission path between a computer platform and a multiple number of peripheral devices. When any change occurs in the number of connected peripheral devices or their operation status, then Fiber Channel loop is interrupted so to disable ongoing Input/Output operations to a targeted peripheral device. When this interruption is sensed, the Master Control Program of the platform will institute corrective measures to re-originate any interrupted I/O operations.

Abstract: The bearing comprises a metal backing, a sintered layer on said metal backing, and a lining layer infiltrated into pores of the sintered layer and standing proud thereof to provide a bearing surface. The lining layer comprises polytetrafluoroethylene including 2 to 10% by volume of fibrillated aramid fibres.

Abstract: A method of manufacturing a bearing material, a bearing material and a bearing having the bearing material on a strong backing are described.

Abstract: A metallization insulating structure, having

Abstract: Using the accumulated magnetic tape statistics in a storage medium (Sumlog File) which were retrieved from the unloading of specifically selected magnetic tape media, of a magnetic tape peripheral, a procedure is instituted to take the tape statistics through a Log Analyzer unit to analyze certain pages of data which then is fed to a Jobformatter unit which organizes each page of data into Write errors, Read errors, and other tape statistics returned by the tape peripheral. The Jobformatter sets-up a display of this information onto a display terminal or a printer.

Abstract: A method of forming a bearing comprising adding an aqueous colloidal dispersion of at least one particulate material to an aqueous dispersion of polytetrafluoroethylene. The method also comprises mixing the dispersions for a period sufficient to allow the polytetrafluoroethylene to coagulate to form a mush, spreading the mush onto a support, and curing the mush to form a bearing lining layer on the support.

Abstract: A method of manufacturing a bearing material, a bearing material and a bearing having the bearing material on a strong backing are described.

Abstract: A method of forming a bearing includes adding at least one particulate material to an aqueous dispersion of polytetrafluoroethylene, mixing the constituents to allow the polytetrafluoroethylene to coagulate to form a mush, spreading the mush on to a support, and curing the mush to form a bearing lining layer on the support. The method is characterized in that the partiulate material is in the form of an aqueous colloidal dispersion including small particles and in that the small particles of the particulate material itself cause coagulation of the polytetrafluoroethylene without need for an additional separate coagulant material.

Abstract: In order to overcome the situation in magnetic tape drives, where an unload command would wipe-out the tape statistics so that no data would then be available which would indicate errors and other tape defects, there has been developed a system and method which permits the retrieval and storage of tape statistics in a Sumlog file. Specialized algorithmic sequences are used to initiate a Rewind/Unload tape request that invokes a COLLECT_TAPE_STATS procedure, (or else to an error handling procedure as a result of a counter overflow condition) which calls a COLLECT_LOG_SENSE_DATA procedure which then collects tape statistics for deposit into a recording medium.

Abstract: A transport device according to one embodiment including an inner foraminous submersible sectional basket for holding live bait/fish and an outer water filled receptacle having false bottom compartments for storing air supply equipment which maintains a continuous controlled flow of air into the water filled receptacle. Both the receptacle and basket have carrying strap handles. The sectional basket is divided by a foraminous separating wall into a large compartment for holding large fish and a small compartment for holding small fish and/or bait. According to a another embodiment the transport device includes a cylindrical housing having an inflatable air bladder and a container disposed in the housing. The container holds a volume of water and rests atop and compresses the air bladder. A tube having an end connected to the air bladder and extends into the container. At the opposite end of the tube is an air stone for diffusing air into the container.