Abstract: Discussed generally herein are methods and devices including or providing an electromagnetic interference (EMI) shielding. A device can include a substrate including electrical connection circuitry therein, grounding circuitry on, or at least partially in the substrate, the grounding circuitry at least partially exposed from a surface of the substrate, a die electrically connected to the connection circuitry and the grounding circuitry, the die on the substrate, and a conductive foil or conductive film surrounding the die, the conductive foil or conductive film electrically connected to the grounding circuitry.

Abstract: Semiconductor packages and methods of forming semiconductor packages are described. In an example, a semiconductor package includes a shielding layer containing metal particles, e.g., conductive particles or magnetic particles, in a resin matrix to attenuate electromagnetic interference. In an example, the shielding layer is transferred from a molding chase to the semiconductor package during a polymer molding operation.

Abstract: Discussed generally herein are methods and devices including or providing an electromagnetic interference (EMI) shielding. A device can include a substrate including electrical connection circuitry therein, grounding circuitry on, or at least partially in the substrate, the grounding circuitry at least partially exposed from a surface of the substrate, a die electrically connected to the connection circuitry and the grounding circuitry, the die on the substrate, and a conductive foil or conductive film surrounding the die, the conductive foil or conductive film electrically connected to the grounding circuitry.

Abstract: Described is an apparatus which comprises: a squeegee head which is operable to drop a material; and a vacuum manifold attachable to the squeegee head, wherein the vacuum manifold is operable to create a vacuum in a space prior to the squeegee head is to drop the material.

Abstract: An electric device and method of fabrication of that electric device is disclosed. The electric device includes one or more electrical devices attached to a substrate. The electric device further includes one or more grounding pads attached to the substrate. The electric device further includes a perforated conductive material placed on the substrate. The electric device further includes a molding compound deposited to cover the perforated conductive material, the one or more devices, and the one or more grounding pads.

Abstract: An apparatus is described that includes a substrate and a mold compound disposed on the substrate. The semiconductor die is embedded within the mold compound and is electrically coupled to lands on the substrate. Solder balls are disposed around the semiconductor die on the substrate. Each of the solder balls have a solid coating thereon. The solid coating contains a cleaning agent to promote its solder ball's coalescence with another solder ball. Respective vias are formed in the mold compound that expose the solder balls and their respective solid coatings. In combined or alternate embodiments outer edges of the mold compound have smaller thickness than regions of the mold compound between the vias and the semiconductor die. In combined or alternate embodiments micro-channels exist between the solder balls and the mold compound.

Abstract: An electric device and method of fabrication of that electric device is disclosed. The electric device includes one or more electrical devices attached to a substrate. The electric device further includes one or more grounding pads attached to the substrate. The electric device further includes a perforated conductive material placed on the substrate. The electric device further includes a molding compound deposited to cover the perforated conductive material, the one or more devices, and the one or more grounding pads.

Abstract: An electric device and method of fabrication of that electric device is disclosed. The electric device includes one or more electrical devices attached to a substrate. The electric device further includes one or more grounding pads attached to the substrate. The electric device further includes a perforated conductive material placed on the substrate. The electric device further includes a molding compound deposited to cover the perforated conductive material, the one or more devices, and the one or more grounding pads.

Abstract: Coated probe tips are described for plunger pins of an integrated circuit package tests system. One example has a plunger having a tip to contact a solder ball of an integrated circuit package, a sleeve to hold the plunger and allow the plunger to move toward and away from the package, the sleeve being held in a socket, a spring within the sleeve to drive the plunger toward the package, and a coating over the tip, the coating being harder than a solder ball.

Abstract: Semiconductor packages and methods of forming semiconductor packages are described. In an example, a semiconductor package includes a shielding layer containing metal particles, e.g., conductive particles or magnetic particles, in a resin matrix to attenuate electromagnetic interference. In an example, the shielding layer is transferred from a molding chase to the semiconductor package during a polymer molding operation.

Abstract: Methods of forming microelectronic packaging structures and associated structures formed thereby are described. Those methods and structures may include forming a wafer level underfill (WLUF) material comprising a resin material, and adding at least one of a UV absorber, a sterically hindered amine light stabilizer (HALS), an organic surface protectant (OSP), and a fluxing agent to form the WLUF material. The WLUF is then applied to a top surface of a wafer comprising a plurality of die.

Abstract: An apparatus is described that includes a substrate and a mold compound disposed on the substrate. The semiconductor die is embedded within the mold compound and is electrically coupled to lands on the substrate. Solder balls are disposed around the semiconductor die on the substrate. Each of the solder balls have a solid coating thereon. The solid coating contains a cleaning agent to promote its solder ball's coalescence with another solder ball. Respective vias are formed in the mold compound that expose the solder balls and their respective solid coatings. In combined or alternate embodiments outer edges of the mold compound have smaller thickness than regions of the mold compound between the vias and the semiconductor die. In combined or alternate embodiments micro-channels exist between the solder balls and the mold compound.

Abstract: An apparatus is described that includes a substrate and a mold compound disposed on the substrate. The semiconductor die is embedded within the mold compound and is electrically coupled to lands on the substrate. Solder balls are disposed around the semiconductor die on the substrate. Each of the solder balls have a solid coating thereon. The solid coating contains a cleaning agent to promote its solder ball's coalescence with another solder ball. Respective vias are formed in the mold compound that expose the solder balls and their respective solid coatings. In combined or alternate embodiments outer edges of the mold compound have smaller thickness than regions of the mold compound between the vias and the semiconductor die. In combined or alternate embodiments micro-channels exist between the solder balls and the mold compound.

Abstract: Methods of forming microelectronic packaging structures and associated structures formed thereby are described. Those methods and structures may include forming a wafer level underfill (WLUF) material comprising a resin material, and adding at least one of a UV absorber, a sterically hindered amine light stabilizer (HALS), an organic surface protectant (OSP), and a fluxing agent to form the WLUF material. The WLUF is then applied to a top surface of a wafer comprising a plurality of die.

Abstract: Embodiments of an apparatus and methods of forming interconnect between a workpiece and substrate and its application to packaging of microelectronic devices are described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of an apparatus and methods of forming interconnect between a workpiece and substrate and its application to packaging of microelectronic devices are described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of an apparatus and methods of forming interconnect between a workpiece and substrate and its application to packaging of microelectronic devices are described herein. Other embodiments may be described and claimed.

Abstract: A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.

Abstract: Embodiments include materials which may be used during electronic device fabrication, including a flux material. The flux material comprises a solution including a plurality of micellar structures in a solvent, the micellar structures each including a plurality of amphiphilic block copolymer elements. The amphiphilic block copolymer elements each include at least one non-polar region and at least one polar region. A fluxing agent is contained within the micellar structures. Other embodiments are described and claimed.

Abstract: Embodiments of an apparatus and methods of forming interconnect between a workpiece and substrate and its application to packaging of microelectronic devices are described herein. Other embodiments may be described and claimed.