Patents by Inventor Anthony Chih-Tung Chan
Anthony Chih-Tung Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11846013Abstract: An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.Type: GrantFiled: July 31, 2020Date of Patent: December 19, 2023Assignee: APPLIED MATERIALS, INC.Inventors: David Gunther, Jiao Song, Kirankumar Neelasandra Savandaiah, Irena H. Wysok, Anthony Chih-Tung Chan
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Publication number: 20230141298Abstract: Methods and apparatus for generating a magnetic field external to a physical vapor deposition (PVD) chamber to improve etch or deposition uniformity on a substrate disposed inside of the PVD chamber are provided herein. In some embodiments, a process chamber, includes a chamber body defining an interior volume therein; a pedestal disposed in the interior volume for supporting a substrate; a coil disposed in the interior volume above the pedestal; and an external magnet assembly, comprising: a housing coupled to the chamber body; and a plurality of magnets disposed external to the chamber body coupled to the housing and arranged asymmetrically about the chamber body.Type: ApplicationFiled: July 14, 2022Publication date: May 11, 2023Inventors: Anthony Chih-Tung CHAN, Adolph Miller ALLEN, Mehul CHAUHAN
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Publication number: 20230088552Abstract: Magnet assemblies comprising a housing with a top plate each comprising aligned openings are described. The housing has a bottom ring and an annular wall with a plurality of openings formed in the bottom ring. The top plate is on the housing and has a plurality of openings aligned with the plurality of openings in the bottom ring of the housing. The magnet assembly may also include a non-conducting base plate and/or a conductive cover plate. Methods for using the magnet assembly and magnetic field tuning are also described.Type: ApplicationFiled: September 17, 2021Publication date: March 23, 2023Applicant: Applied Materials, Inc.Inventors: Borui Xia, Anthony Chih-Tung Chan, Shiyu Yue, Wei Lei, Aravind Miyar Kamath, Mukund Sundararajan, Rongjun Wang, Adolph Miller Allen
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Patent number: 11581166Abstract: Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.Type: GrantFiled: July 31, 2020Date of Patent: February 14, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Kirankumar Neelasandra Savandaiah, Jiao Song, David Gunther, Irena H. Wysok, Anthony Chih-Tung Chan
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Publication number: 20220364230Abstract: Methods and apparatus for forming a barrier layer are provided herein. In some embodiments, a method of forming a barrier layer on a substrate includes treating an exposed layer deposited on a substrate and within a feature of the substrate by pulsing a bias power applied to a substrate support supporting the substrate while exposing the layer to a plasma. The exposed layer can be deposited by an atomic layer deposition process, and can be, for example, a tantalum nitride layer. The bias power can be up to 500 watts of RF power at a pulse frequency of about 1 Hz to about 10 kHz. The bias power can be pulsed uniformly or at multiple different levels.Type: ApplicationFiled: April 29, 2022Publication date: November 17, 2022Inventors: Rui LI, Xiangjin XIE, Xianmin TANG, Anthony Chih-Tung CHAN
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Patent number: 11295938Abstract: Methods and apparatus for processing a substrate are provided herein. In embodiments, a magnetron assembly for use in a PVD chamber includes: a base plate having a first side, a second side opposite the first side, and a central axis; a magnet plate rotatably coupled to the base plate, wherein the magnet plate rotates with respect to the base plate about an offset axis; a magnet assembly coupled to the magnet plate offset from the offset axis and configured to rotate about the central axis and the offset axis; a first motor coupled to the base plate to rotate the magnet assembly about the central axis; and a second motor coupled to the magnet plate to control an angular position thereof and to position the magnet assembly in each of a plurality of fixed angular positions defining a plurality of different fixed radii.Type: GrantFiled: June 30, 2020Date of Patent: April 5, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Jiao Song, Anthony Chih-Tung Chan, David Gunther, Kirankumar Neelasandra Savandaiah, Irena H. Wysok
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Publication number: 20220033956Abstract: An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.Type: ApplicationFiled: July 31, 2020Publication date: February 3, 2022Inventors: David GUNTHER, Jiao SONG, Kirankumar Neelasandra SAVANDAIAH, Irena H. WYSOK, Anthony Chih-Tung CHAN
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Publication number: 20220037128Abstract: Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.Type: ApplicationFiled: July 31, 2020Publication date: February 3, 2022Inventors: Kirankumar Neelasandra SAVANDAIAH, Jiao SONG, David GUNTHER, Irena H. WYSOK, Anthony Chih-Tung CHAN
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Publication number: 20210407778Abstract: Methods and apparatus for processing a substrate are provided herein. In embodiments, a magnetron assembly for use in a PVD chamber includes: a base plate having a first side, a second side opposite the first side, and a central axis; a magnet plate rotatably coupled to the base plate, wherein the magnet plate rotates with respect to the base plate about an offset axis; a magnet assembly coupled to the magnet plate offset from the offset axis and configured to rotate about the central axis and the offset axis; a first motor coupled to the base plate to rotate the magnet assembly about the central axis; and a second motor coupled to the magnet plate to control an angular position thereof and to position the magnet assembly in each of a plurality of fixed angular positions defining a plurality of different fixed radii.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Inventors: Jiao SONG, Anthony Chih-Tung CHAN, David GUNTHER, Kirankumar Neelasandra SAVANDAIAH, Irena H. WYSOK
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Patent number: 11189472Abstract: Embodiments of a magnetron assembly and a processing system incorporating same are provided herein. In some embodiments, a magnetron assembly includes a body extending along a central axis of the magnetron assembly; a coolant feed structure extending through the body along the central axis to provide a coolant along the central axis to an area beneath the coolant feed structure; and a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets.Type: GrantFiled: July 17, 2017Date of Patent: November 30, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Irena H. Wysok, Kirankumar Savandaiah, Anthony Chih-Tung Chan, Jiao Song, Prashant Prabhu
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Publication number: 20190019658Abstract: Embodiments of a magnetron assembly and a processing system incorporating same are provided herein. In some embodiments, a magnetron assembly includes a body extending along a central axis of the magnetron assembly; a coolant feed structure extending through the body along the central axis to provide a coolant along the central axis to an area beneath the coolant feed structure; and a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets.Type: ApplicationFiled: July 17, 2017Publication date: January 17, 2019Inventors: Irena H. Wysok, Kirankumar Savandaiah, Anthony Chih-Tung Chan, Jiao Song, Prashant Prabhu
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Patent number: 7767572Abstract: Methods of forming a barrier layer for an interconnection structure are provided. In one embodiment, a method for forming an interconnect structure includes providing a substrate having a first conductive layer disposed thereon, incorporating oxygen into an upper portion of the first conductive layer, depositing a first barrier layer on the first conductive layer, and diffusing the oxygen incorporated into the upper portion of the first conductive layer into a lower portion of the first barrier layer. In another embodiment, a method for forming an interconnection structure includes providing a substrate having a first conductive layer disposed thereon, treating an upper surface of the first conductive layer with an oxygen containing gas, depositing a first barrier layer on the treated conductive layer, and depositing a second conductive layer on the first barrier layer while driving a portion of oxygen atoms from the treated conductive layer into the first barrier layer.Type: GrantFiled: February 21, 2008Date of Patent: August 3, 2010Assignee: Applied Materials, Inc.Inventors: Chong Jiang, Anthony Chih-Tung Chan
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Publication number: 20090215260Abstract: Methods of forming a barrier layer for an interconnection structure are provided. In one embodiment, a method for forming an interconnect structure includes providing a substrate having a first conductive layer disposed thereon, incorporating oxygen into an upper portion of the first conductive layer, depositing a first barrier layer on the first conductive layer, and diffusing the oxygen incorporated into the upper portion of the first conductive layer into a lower portion of the first barrier layer. In another embodiment, a method for forming an interconnection structure includes providing a substrate having a first conductive layer disposed thereon, treating an upper surface of the first conductive layer with an oxygen containing gas, depositing a first barrier layer on the treated conductive layer, and depositing a second conductive layer on the first barrier layer while driving a portion of oxygen atoms from the treated conductive layer into the first barrier layer.Type: ApplicationFiled: February 21, 2008Publication date: August 27, 2009Inventors: Chong Jiang, Anthony Chih-Tung Chan
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Patent number: D933726Type: GrantFiled: July 31, 2020Date of Patent: October 19, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Kirankumar Neelasandra Savandaiah, Jiao Song, David Gunther, Irena H. Wysok, Anthony Chih-Tung Chan