Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: Embodiments that design integrated circuits using a 1×N compiler in a closed-loop 1×N methodology are disclosed. Some embodiments create a physical design representation based on a behavioral representation of a design for an integrated circuit. The behavioral representation may comprise RTL HDL with one or more 1×N building blocks. The embodiments may alter elements of the 1×N building block by using logic design tools, synthesis tools, physical design tools, and timing analysis tools. Further embodiments comprise an apparatus having a first generator to generate a behavioral representation of a design for an integrated circuit, a second generator to generate a logical representation of the design, and a third generator to generate a physical design representation of the design, wherein the representation generators may create updated versions of the representations which reflect alterations made to 1×N building block elements.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: Embodiments that create parent-child relationships for reuse of 1×N building blocks in a closed-loop 1×N system are disclosed. Some methods comprise generating a representation of an IC design, inserting a first 1×N building block into the representation, and creating an association between the first 1×N building block and a second 1×N building block. The association enables the first 1×N building block to inherit alterations of attributes of the second 1×N building block and enables unique alterations of attributes of the first 1×N building block which differ from the second 1×N building block. Further embodiments comprise an apparatus having an equivalency determiner to determine a logical equivalence between a two 1×N building blocks, an attribute creator that creates a set of attributes and enables one of the 1×N building blocks to inherit parent attributes and comprise child attributes.

Abstract: Embodiments that make DFM alterations to cells of 1×N building blocks via a closed-loop 1×N compiler are disclosed. Some embodiments comprise using a 1×N compiler to detect a relationship between two adjacent cells of a 1×N building block. Based on the relationship, the embodiments select a DFM alteration and apply the alteration to a physical design representation. The embodiments may apply various types of DFM alterations depending on the relationship, such as adding polysilicon, adding metal to create redundant connections, and merging diffusion areas to increase capacitance on supply nodes. Further embodiments comprise an apparatus having a cell examiner to examine two adjacent cells of a 1×N building block and determine a relationship of the two cells. The apparatus also comprises a DFM selector to select a DFM alteration based on the relationship and a DFM applicator to apply the selected DFM alteration to one of the cells.

Abstract: Embodiments that reassemble hierarchical representations in a closed-loop 1×N system are disclosed. Some embodiments comprise creating a flat netlist from a hierarchical representation of a 1×N building block, creating attributes for the flat netlist, and altering one or more elements of the flat netlist, such as by an operation of a logic design tool, a synthesis tool, a physical design tool, or a timing analysis tool. The embodiments further comprise generating a second hierarchical representation of the 1×N building block that reflects the altered element. Further embodiments comprise an apparatus having a 1×N compiler and a reassembler. The 1×N compiler may create attributes for a flat netlist of elements of a hierarchical representation of a 1×N building block. The reassembler may use the attributes to create a second hierarchical representation of the 1×N building block that reflects alteration of elements to the flat netlist.

Abstract: Embodiments that design integrated circuits using a closed loop 1×N methodology are disclosed. Some embodiments create a physical design representation based on a behavioral representation of a design for an integrated circuit. The behavioral representation may comprise RTL HDL with one or more 1×N building blocks. The embodiments may alter elements of the 1×N building block by using logic design tools, synthesis tools, physical design tools, and timing analysis tools. Further embodiments comprise an apparatus having a viewer and a 1×N compiler. The viewer may generate displays of behavioral representations of 1×N building blocks, with the behavioral representations comprising RTL definitions. The 1×N compiler may create physical design representations of the 1×N building block and create behavioral representations from the physical design representations, wherein the physical design representations have elements altered by one or more tools of a tool suite.

Abstract: Embodiments that design integrated circuits using a 1×N compiler in a closed-loop 1×N methodology are disclosed. Some embodiments create a physical design representation based on a behavioral representation of a design for an integrated circuit. The behavioral representation may comprise RTL HDL with one or more 1×N building blocks. The embodiments may alter elements of the 1×N building block by using logic design tools, synthesis tools, physical design tools, and timing analysis tools. Further embodiments comprise an apparatus having a first generator to generate a behavioral representation of a design for an integrated circuit, a second generator to generate a logical representation of the design, and a third generator to generate a physical design representation of the design, wherein the representation generators may create updated versions of the representations which reflect alterations made to 1×N building block elements.

Abstract: Embodiments that route 1×N building blocks using higher-level wiring information for a 1×N compiler are disclosed. Some embodiments comprise determining higher-level coordinates for a blockage of a 1×N building block, determining intra-1×N coordinates for a shape of the blockage via the higher-level coordinates, and creating routes of intra-1×N wires of the 1×N building block that avoid the intra-1×N coordinates. Further embodiments comprise an apparatus having a higher-level wiring examiner to examine higher-level wiring of an area near a 1×N building block of a physical design representation. The apparatus may also have a blockage determiner to determine a blockage that affects intra-1×N wiring for the 1×N building block and a coordinate calculator to calculate coordinates of a shape of the blockage, wherein the calculated coordinates may enable a routing tool to avoid the shape when creating intra-1×N wiring for the 1×N building block.

Abstract: A method, system and processor for increasing the instruction throughput in a processor executing longer latency instructions within the instruction pipeline. Logic associated with specific stages of the execution pipeline, responsible for executing the particular type of instructions, determines when at least a threshold number of the particular-type instructions is scheduled to be executed. The logic then automatically changes an execution cycle frequency of the specific pipeline stages from a first cycle frequency to a second, pre-established higher cycle frequency, which enables more efficient execution and higher execution throughput of the particular-type instructions. The cycle frequency of only the one or more functional stages are switched to the higher cycle frequency independent of the cycle frequency of the other functional stages in the processor pipeline.

Abstract: Embodiments comprise an adjusted polysilicon gate pitch to metal wire pitch relationship to improve area scalars while increasing ACLV tolerance with a fixed polysilicon gate pitch. In some embodiments, the wire pitch for at least one metallization layer is adjusted to match the pitch for the polysilicon gate. In one embodiment, the next to the lowest metallization layer running in the same orientation as the polysilicon gate, utilized to access the input or output of the interconnected cell structures is relaxed to match the minimum contacted gate pitch and the metal is aligned above each polysilicon gate. In another embodiment, the polysilicon gate pitch may be relaxed to attain a smaller lowest common multiple with the wire pitch for an integrated circuit to reduce the minimum step off.

Abstract: Methods, systems, and media to improve the manufacturability of cells and structures within cells of an integrated circuit are disclosed. Embodiments comprise a method of arranging programmable cells, routing the programmable cells, analyzing the cell arrangement and interconnect wiring for manufacturing improvement opportunities, and modifying the programmable cell structures to incorporate the manufacturing improvements. In some embodiments, wires are spread to prevent shorting. In other embodiments, the reliability of contacts and vias is improved by adding additional metallization to the areas surrounding the contacts and vias, or by adding redundant contacts and vias. In one embodiment, a series of manufacturing improvements are made to integrated circuit cells in an iterative fashion.

Abstract: This invention provides a method for determining leakage current in a CMOS circuit having several devices. It includes the steps of reading a netlist which describes the circuit and includes information on both these devices in the circuit and how these devices are interconnected. Next, an input signal state data file is generated which provides all of the possible input states for the circuit. A determination is made of which devices in the circuit are in an OFF state for each of the input signal states provided. Then the leakage current for each of these devices in the OFF state is computed for each of the input signal states.

Abstract: A system and method for improving the performance and efficiency of multi-clock-domain data transmission interfaces. The data transmission interface may include a modified slave latch which includes one or more clock splitters and one or more transmission gates may be used. By having such a configuration, space requirements are reduced and a reduction of the number of devices necessary for a multi-domain interface may be realized. The configuration may further allow for independent cycle stealing of N:1 and N:2 logical paths, thus allowing for timing resolution solutions that use fewer devices versus implementations that require the tuning of each individual bit in the cross-clock-domain interface. By implementing such a data transmission interface, space and power requirements may be reduced and timing criticalities may be more easily managed.

Abstract: A standard cell library including a first set of cells including mixed threshold voltage cells. Each mixed threshold voltage cell includes a first threshold voltage device having a first threshold voltage and a second threshold voltage device having a second threshold voltage, in which the first threshold voltage is different from the second threshold voltage. The standard cell library further includes a second set of cells including non-mixed threshold voltage cells. Each non-mixed threshold voltage cell includes threshold voltage devices having a same threshold voltage. A mixed threshold voltage cell has substantially a same footprint as a non-mixed threshold voltage cell.

Abstract: A method, system and processor for adaptively and selectively controlling the instruction execution frequency of a data processor. Processing logic or a software compiler determines when a number of first-type instructions, requiring longer execution latency, are scheduled to be executed. The logic/compiler then triggers the CPM unit to automatically switch the execution frequency of the instruction processor from a first frequency that is optimal for processing regular-type instructions to a second, pre-established lower frequency that is optimal for processing the first-type instructions, to enable more efficient execution and higher execution throughput of the number of first-type operations within the processor. When the first-type instructions have completed execution, the processor's instruction execution frequency is returned to the first optimal frequency.

Abstract: Systems and arrangements to interconnect cells and structures within cells of an integrated circuit to enhance cell density are disclosed. Embodiments comprise an adjusted polysilicon gate pitch to metal wire pitch relationship to improve area scalars while increasing ACLV tolerance with a fixed polysilicon gate pitch. In some embodiments, the wire pitch for at least one metallization layer is adjusted to match the pitch for the polysilicon gate. In one embodiment, the next to the lowest metallization layer running in the same orientation as the polysilicon gate, utilized to access the input or output of the interconnected cell structures is relaxed to match the minimum contacted gate pitch and the metal is aligned above each polysilicon gate. In another embodiment, the polysilicon gate pitch may be relaxed to attain a smaller lowest common multiple with the wire pitch for an integrated circuit to reduce the minimum step off.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: Using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise having a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: Embodiments that generate 1×N building block representations for an IC design via a GUI of a 1×N block builder are disclosed. Some embodiments enable, via a GUI, selection of a logical function for a 1×N building block. The embodiments also comprise enabling selection of an implementation from a number of implementations of the logical function and automatically generating a 1×N building block representation of the logical function based on the selected implementation. The generated 1×N building block representation comprises an RTL description of the 1×N building block. Further embodiments comprise an apparatus having a GUI generator, a logical function selector to select a logical function, an implementation selector to select an implementation of the logical function from a number of implementations, and a 1×N building block generator to generate a 1×N building block representation of the 1×N building block based on the selected implementation.