Patents by Inventor Anthony Lochtefeld

Anthony Lochtefeld has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10347794
    Abstract: Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: July 9, 2019
    Assignee: Qromis, Inc.
    Inventors: Anthony Lochtefeld, Hugues Marchand
  • Publication number: 20180226533
    Abstract: A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor layer. A solder bonding layer bonds the donor layer to a carrier substrate. A porous layer may be used to separate the donor layer.
    Type: Application
    Filed: February 8, 2017
    Publication date: August 9, 2018
    Applicant: Amberwave Inc.
    Inventors: Anthony Lochtefeld, Chris Leitz, Mark Carroll
  • Patent number: 9812601
    Abstract: A device, system, and method for a multi junction solar cell are described herein. An exemplary multi-solar cell structure can have a substrate having a first surface having a (111) crystalline etched surface. A dielectric layer can be deposited on the first surface of the substrate. A graded buffer layer can be grown on a second surface of the substrate with the second surface having a (100) crystalline surface. A first solar subcell within or on top of the graded buffer layer and a second solar subcell grown on top of the first solar subcell.
    Type: Grant
    Filed: March 17, 2014
    Date of Patent: November 7, 2017
    Assignee: Amberwave Inc.
    Inventor: Anthony Lochtefeld
  • Patent number: 9590130
    Abstract: A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor layer. A solder bonding layer bonds the donor layer to a carrier substrate. A porous layer may be used to separate the donor layer.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: March 7, 2017
    Assignee: AMBERWAVE INC.
    Inventors: Anthony Lochtefeld, Chris Leitz, Mark Carroll
  • Publication number: 20160049535
    Abstract: A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.
    Type: Application
    Filed: July 17, 2015
    Publication date: February 18, 2016
    Applicant: AMBERWAVE, INC.
    Inventors: Anthony Lochtefeld, Chris Leitz
  • Patent number: 9178105
    Abstract: A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: November 3, 2015
    Assignee: Amberwave Inc.
    Inventors: Anthony Lochtefeld, Chris Leitz
  • Publication number: 20150221832
    Abstract: Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.
    Type: Application
    Filed: April 17, 2015
    Publication date: August 6, 2015
    Inventors: Anthony Lochtefeld, Hugues Marchand
  • Patent number: 9012253
    Abstract: Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: April 21, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Anthony Lochtefeld, Hugues Marchand
  • Publication number: 20140261652
    Abstract: A device, system, and method for a multi junction solar cell are described herein. An exemplary multi-solar cell structure can have a substrate having a first surface having a (111) crystalline etched surface. A dielectric layer can be deposited on the first surface of the substrate. A graded buffer layer can be grown on a second surface of the substrate with the second surface having a (100) crystalline surface. A first solar subcell within or on top of the graded buffer layer and a second solar subcell grown on top of the first solar subcell.
    Type: Application
    Filed: March 17, 2014
    Publication date: September 18, 2014
    Applicant: Amberwave Inc.
    Inventor: Anthony Lochtefeld
  • Publication number: 20130056053
    Abstract: A device, system, and method for a multi-junction solar cell is described herein. An exemplary silicon germanium solar cell structure has a substrate with a graded buffer layer grown on the substrate. A base layer and emitter layer for a first solar cell are grown in or on the graded buffer layer. A first junction is provided between the emitter layer and the base layer. A second solar cell is grown on top of the first solar cell.
    Type: Application
    Filed: September 4, 2012
    Publication date: March 7, 2013
    Applicant: AMBERWAVE INC.
    Inventors: Anthony Lochtefeld, Andrew Gerger
  • Publication number: 20130029449
    Abstract: Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
    Type: Application
    Filed: August 24, 2012
    Publication date: January 31, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Zhiyuan Cheng, James G. Fiorenza, Calvin Sheen, Anthony Lochtefeld
  • Publication number: 20120273043
    Abstract: A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor layer. A solder bonding layer bonds the donor layer to a carrier substrate. A porous layer may be used to separate the donor layer.
    Type: Application
    Filed: April 30, 2012
    Publication date: November 1, 2012
    Applicant: AMBERWAVE INC.
    Inventors: Anthony Lochtefeld, Chris Leitz, Mark Carroll
  • Patent number: 8253211
    Abstract: Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: August 28, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Zhiyuan Cheng, James G. Fiorenza, Calvin Sheen, Anthony Lochtefeld
  • Publication number: 20120086047
    Abstract: Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
    Type: Application
    Filed: December 15, 2011
    Publication date: April 12, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Matthew Currie, Anthony Lochtefeld, Richard Hammond, Eugene Fitzgerald
  • Publication number: 20120067423
    Abstract: A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.
    Type: Application
    Filed: September 21, 2011
    Publication date: March 22, 2012
    Applicant: AMBERWAVE, INC.
    Inventors: Anthony Lochtefeld, Chris Leitz
  • Publication number: 20120068226
    Abstract: Methods and structures are provided for formation of devices on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.
    Type: Application
    Filed: September 23, 2011
    Publication date: March 22, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jennifer Hydrick, Jizhong Li, Zhiyuan Cheng, James G. Fiorenza, Jie Bai, Ji-Soo Park, Anthony Lochtefeld
  • Publication number: 20110272011
    Abstract: A device, system, and method for a thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in may demonstrate higher open circuit voltage are disclosed herein. An exemplary thin silicon solar cell structure has a p+ silicon substrate. A dielectric layer is disposed over the p+ silicon substrate. One or more trenches are defined within the dielectric layer. A thin n type silicon layer is grown on the p+ silicon substrate within the trench by epitaxial lateral overgrowth wherein a junction area of the solar cell is minimized.
    Type: Application
    Filed: June 7, 2010
    Publication date: November 10, 2011
    Applicant: AMBERWAVE, INC.
    Inventors: Anthony Lochtefeld, Allen Barnett
  • Patent number: 8034697
    Abstract: Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: October 11, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: James Fiorenza, Anthony Lochtefeld, Jie Bai, Ji-Soo Park, Jennifer Hydrick, Jizhong Li, Zhiyuan Cheng
  • Publication number: 20110174376
    Abstract: A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor absorber layer. A conductive bonding layer bonds the absorber layer to a carrier substrate. A porous layer or ion implant may be used to form the donor absorber layer.
    Type: Application
    Filed: January 19, 2011
    Publication date: July 21, 2011
    Applicant: AMBERWAVE, INC.
    Inventors: Anthony Lochtefeld, Jizhong Li, Allen Barnett, Donald Stryker
  • Publication number: 20110147772
    Abstract: Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.
    Type: Application
    Filed: December 15, 2010
    Publication date: June 23, 2011
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Anthony Lochtefeld, Hugues Marchand