Patents by Inventor Anthony Lochtefeld
Anthony Lochtefeld has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220021330Abstract: A solar cell roofing system that includes a solar cell module including at least one solar cell that is laminated to a metal support sheet; and at least one bracket having a first type attachment point for engaging a standing seam of a standing seam metal roof and a second type attachment for engaging the metal support sheet of an adjacent solar cell module. During engagement of the solar cell module to the bracket, and engagement of the bracket to the standing seam, at least the metal support sheet is engaged in tension.Type: ApplicationFiled: July 19, 2021Publication date: January 20, 2022Inventor: Anthony Lochtefeld
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Publication number: 20210351310Abstract: The present disclosure describes a solar cell that in one embodiment includes a substrate having a first thermal expansion coefficient; and a strain balancing layer on a surface of the substrate having a second thermal expansion greater than the first thermal expansion coefficient. The solar cell further includes a solder bonding layer on a surface of the strain balancing layer to position the strain balancing layer between the solder bonding layer and the supporting substrate. The solar cell further includes a semiconductor junction having a bonded surface on the solder bonding layer that is opposite the surface of the solder bonding layer engaged to the strain balancing layer.Type: ApplicationFiled: May 7, 2021Publication date: November 11, 2021Inventor: Anthony Lochtefeld
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Patent number: 10971647Abstract: A method of forming a solar cell device that includes forming a porous layer in a monocrystalline donor substrate and forming an epitaxial semiconductor layer on the porous layer. A solar cell structure is formed on the epitaxial semiconductor layer. A carrier substrate is bonded to the solar cell structure through a bonding layer. The monocrystalline donor substrate is removed by cleaving the porous layer. A grid of metal contacts is formed on the epitaxial semiconductor layer. The exposed portions of the epitaxial semiconductor layer are removed. The exposed surface of the solar cell structure is textured. The textured surface may be passivated, in which the passivated surface can provide an anti-reflective coating.Type: GrantFiled: May 7, 2019Date of Patent: April 6, 2021Assignee: AmberWave, Inc.Inventors: Anthony Lochtefeld, Allen Barnett
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Publication number: 20190341512Abstract: A method of forming a solar cell device that includes forming a porous layer in a monocrystalline donor substrate and forming an epitaxial semiconductor layer on the porous layer. A solar cell structure is formed on the epitaxial semiconductor layer. A carrier substrate is bonded to the solar cell structure through a bonding layer. The monocrystalline donor substrate is removed by cleaving the porous layer. A grid of metal contacts is formed on the epitaxial semiconductor layer. The exposed portions of the epitaxial semiconductor layer are removed. The exposed surface of the solar cell structure is textured. The textured surface may be passivated, in which the passivated surface can provide an anti-reflective coating.Type: ApplicationFiled: May 7, 2019Publication date: November 7, 2019Inventors: Anthony Lochtefeld, Allen Barnett
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Patent number: 10347794Abstract: Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.Type: GrantFiled: April 17, 2015Date of Patent: July 9, 2019Assignee: Qromis, Inc.Inventors: Anthony Lochtefeld, Hugues Marchand
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Publication number: 20180226533Abstract: A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor layer. A solder bonding layer bonds the donor layer to a carrier substrate. A porous layer may be used to separate the donor layer.Type: ApplicationFiled: February 8, 2017Publication date: August 9, 2018Applicant: Amberwave Inc.Inventors: Anthony Lochtefeld, Chris Leitz, Mark Carroll
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Patent number: 9812601Abstract: A device, system, and method for a multi junction solar cell are described herein. An exemplary multi-solar cell structure can have a substrate having a first surface having a (111) crystalline etched surface. A dielectric layer can be deposited on the first surface of the substrate. A graded buffer layer can be grown on a second surface of the substrate with the second surface having a (100) crystalline surface. A first solar subcell within or on top of the graded buffer layer and a second solar subcell grown on top of the first solar subcell.Type: GrantFiled: March 17, 2014Date of Patent: November 7, 2017Assignee: Amberwave Inc.Inventor: Anthony Lochtefeld
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Patent number: 9590130Abstract: A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor layer. A solder bonding layer bonds the donor layer to a carrier substrate. A porous layer may be used to separate the donor layer.Type: GrantFiled: April 30, 2012Date of Patent: March 7, 2017Assignee: AMBERWAVE INC.Inventors: Anthony Lochtefeld, Chris Leitz, Mark Carroll
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Publication number: 20160049535Abstract: A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.Type: ApplicationFiled: July 17, 2015Publication date: February 18, 2016Applicant: AMBERWAVE, INC.Inventors: Anthony Lochtefeld, Chris Leitz
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Patent number: 9178105Abstract: A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.Type: GrantFiled: September 21, 2011Date of Patent: November 3, 2015Assignee: Amberwave Inc.Inventors: Anthony Lochtefeld, Chris Leitz
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GALLIUM NITRIDE WAFER SUBSTRATE FOR SOLID STATE LIGHTING DEVICES, AND ASSOCIATED SYSTEMS AND METHODS
Publication number: 20150221832Abstract: Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.Type: ApplicationFiled: April 17, 2015Publication date: August 6, 2015Inventors: Anthony Lochtefeld, Hugues Marchand -
Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
Patent number: 9012253Abstract: Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.Type: GrantFiled: December 15, 2010Date of Patent: April 21, 2015Assignee: Micron Technology, Inc.Inventors: Anthony Lochtefeld, Hugues Marchand -
Publication number: 20140261652Abstract: A device, system, and method for a multi junction solar cell are described herein. An exemplary multi-solar cell structure can have a substrate having a first surface having a (111) crystalline etched surface. A dielectric layer can be deposited on the first surface of the substrate. A graded buffer layer can be grown on a second surface of the substrate with the second surface having a (100) crystalline surface. A first solar subcell within or on top of the graded buffer layer and a second solar subcell grown on top of the first solar subcell.Type: ApplicationFiled: March 17, 2014Publication date: September 18, 2014Applicant: Amberwave Inc.Inventor: Anthony Lochtefeld
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Publication number: 20130056053Abstract: A device, system, and method for a multi-junction solar cell is described herein. An exemplary silicon germanium solar cell structure has a substrate with a graded buffer layer grown on the substrate. A base layer and emitter layer for a first solar cell are grown in or on the graded buffer layer. A first junction is provided between the emitter layer and the base layer. A second solar cell is grown on top of the first solar cell.Type: ApplicationFiled: September 4, 2012Publication date: March 7, 2013Applicant: AMBERWAVE INC.Inventors: Anthony Lochtefeld, Andrew Gerger
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Publication number: 20130029449Abstract: Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.Type: ApplicationFiled: August 24, 2012Publication date: January 31, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Zhiyuan Cheng, James G. Fiorenza, Calvin Sheen, Anthony Lochtefeld
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Publication number: 20120273043Abstract: A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor layer. A solder bonding layer bonds the donor layer to a carrier substrate. A porous layer may be used to separate the donor layer.Type: ApplicationFiled: April 30, 2012Publication date: November 1, 2012Applicant: AMBERWAVE INC.Inventors: Anthony Lochtefeld, Chris Leitz, Mark Carroll
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Patent number: 8253211Abstract: Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.Type: GrantFiled: September 24, 2009Date of Patent: August 28, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zhiyuan Cheng, James G. Fiorenza, Calvin Sheen, Anthony Lochtefeld
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Publication number: 20120086047Abstract: Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.Type: ApplicationFiled: December 15, 2011Publication date: April 12, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Matthew Currie, Anthony Lochtefeld, Richard Hammond, Eugene Fitzgerald
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Publication number: 20120068226Abstract: Methods and structures are provided for formation of devices on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.Type: ApplicationFiled: September 23, 2011Publication date: March 22, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jennifer Hydrick, Jizhong Li, Zhiyuan Cheng, James G. Fiorenza, Jie Bai, Ji-Soo Park, Anthony Lochtefeld
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Publication number: 20120067423Abstract: A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.Type: ApplicationFiled: September 21, 2011Publication date: March 22, 2012Applicant: AMBERWAVE, INC.Inventors: Anthony Lochtefeld, Chris Leitz