Abstract: The present disclosure concerns an electronic device formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising at least one e-mode type HEMT power transistor adapted to receiving a maximum voltage of 650 V between its drain and its source, and an analog circuit for controlling said power transistor.

Abstract: An embodiment pulse generator circuit comprises a first electronic switch coupled between first and second nodes, and a second electronic switch coupled between the second node and a reference node. An LC resonant circuit comprising an inductance and a capacitance is coupled between the first and reference nodes along with charge circuitry comprises a further inductance in a current flow line between a supply node and an intermediate node in the LC resonant circuit. Drive circuitry of the electronic switches repeats, during a sequence of switching cycles, charge time intervals, wherein the capacitance in the LC resonant circuit is charged via the charge circuit, and pulse generation time intervals, wherein a pulsed current is provided to the load via the first and second nodes. The charge and pulse generation time intervals are interleaved with oscillation time intervals where the LC resonant circuit oscillates at a resonance frequency.

Abstract: In an embodiment, a phase circuit includes: a bidirectional output stage configured to be coupled between a first battery and a second battery; a memory configured to store a number of active phases, and an identifier; and a synchronization circuit configured to receive a first clock signal and determine a start time of a switching cycle of the bidirectional output stage based on the number of active phases, the identifier, and the first clock signal, where the phase circuit is configured to control the timing of the switching of the bidirectional output stage based on the start time.

Abstract: The present disclosure relates to a device comprising a first transistor and a first circuit comprising first and second terminals, the first circuit being configured to generate a first voltage representing the temperature of the first transistor, a first terminal of the first circuit being coupled to the drain of the first transistor.

Abstract: Embodiments are directed to electronic fuse devices and systems. One such electronic fuse includes current sensing circuitry that senses a current in a conductor coupled between a power supply and a load, and generates a current sensing signal indicative of the sensed current. I2t circuitry receives the current sensing signal and determines whether the sensed current exceeds an I2t curve of the conductor. The electronic fuse further includes at least one of external MOSFET temperature sensing circuitry that senses a temperature of an external MOSFET coupled to the conductor, low current bypass circuitry that supplies a reduced current to the load in a low power consumption mode during which the external MOSFET is in a non-conductive state, or desaturation sensing circuitry that senses a drain-source voltage of the external MOSFET.

Abstract: An electronic module for generating light pulses includes an electronic card or interposer, a LASER-diode lighting module, and a LASER-diode driver module. The interposer has an edge recess in which the lighting module is completely inserted. The driver module is arranged on top of the interposer and the lighting module. The electrical connections for driving the LASER diodes are obtained without resorting to wire bonding in order to reduce the parasitic inductances.

Abstract: In accordance with an embodiment, a pulse generator circuit includes: an LC resonant circuit coupled between a first node and a reference node; a first switch coupled between the first node and the reference node; a switching network comprising a second switch coupled between the first node and a respective drive node; and drive circuit having outputs coupled to the first switch and to the second switch of the switching network. The drive circuit configured to, in repeating cycles: close the first switch when a current flowing through an inductor of the LC resonant circuit increases during a resonant cycle, when the current flowing through the inductor reaches a threshold value, open the first switch, close the second switch of the switching network for a pulse duration time when the first switch is open, and open the second switch at an expiration of the pulse duration time.

Abstract: An embodiment pulse generator circuit comprises a first electronic switch coupled between first and second nodes, and a second electronic switch coupled between the second node and a reference node. An LC resonant circuit comprising an inductance and a capacitance is coupled between the first and reference nodes along with charge circuitry comprises a further inductance in a current flow line between a supply node and an intermediate node in the LC resonant circuit. Drive circuitry of the electronic switches repeats, during a sequence of switching cycles, charge time intervals, wherein the capacitance in the LC resonant circuit is charged via the charge circuit, and pulse generation time intervals, wherein a pulsed current is provided to the load via the first and second nodes. The charge and pulse generation time intervals are interleaved with oscillation time intervals where the LC resonant circuit oscillates at a resonance frequency.

Abstract: An embodiment pulse generator circuit is configured to apply a current pulse to two output terminals. The pulse generator circuit comprises an LC resonant circuit comprising an inductance and a capacitance connected in series between a first node and a negative input terminal. The pulse generator circuit comprises a charge circuit configured to charge the capacitance via a supply voltage, a first electronic switch configured to selectively short-circuit the two output terminals, a second electronic switch configured to selectively connect the two output terminals in parallel with the LC resonant circuit, and a control circuit configured to drive the first and the second electronic switch.

Abstract: An electronic circuit can include a semiconductor chip having a thickness smaller than 160 ?m and a package with flush contacts having the chip encapsulated therein. In some cases, the chip takes up more than twenty-five percent of the surface area of the package. The package can be a quad flat no-lead (QFN) package.

Abstract: Disclosed herein is a device comprising a protection circuit configured to protect against a polarity reversal of the input DC power supply voltage, the protection circuit comprising an N-channel main transistor having a source coupled to an input terminal and having a drain coupled to an output terminal, a command circuit configured to render the main transistor blocked in the event of a polarity reversal and conducting otherwise, and a control circuit configured to dynamically adjust the bias of substrate regions of respective components connected to the main transistor by connecting the substrate regions either to the source or to the drain of the main transistor according to the value of the voltages present at the source and the drain of the main transistor and the type of conductivity of the substrate regions.

Abstract: The disclosure concerns circuitry for controlling a power transistor of a drive circuit arranged to drive an electrical component, the circuitry comprising: a variable current source adapted to set the level of a current for charging a control terminal of said power transistor; and a control circuit adapted to control said variable current source in a continuous manner based on a feedback voltage.

Abstract: Disclosed herein is a device comprising a protection circuit configured to protect against a polarity reversal of the input DC power supply voltage, the protection circuit comprising an N-channel main transistor having a source coupled to an input terminal and having a drain coupled to an output terminal, a command circuit configured to render the main transistor blocked in the event of a polarity reversal and conducting otherwise, and a control circuit configured to dynamically adjust the bias of substrate regions of respective components connected to the main transistor by connecting the substrate regions either to the source or to the drain of the main transistor according to the value of the voltages present at the source and the drain of the main transistor and the type of conductivity of the substrate regions.

Abstract: The electronic device for protecting against a polarity reversal of a DC power supply voltage comprises, produced within one and the same integrated circuit, an N-channel main transistor (TP) mounted on the line of expected positive polarity of the power supply voltage and command means (MCM) for the main transistor comprising a charging pump circuit (CP), associated with a dynamic biasing circuit (MCTRL) for the substrate regions of active components connected to the main transistor.

Abstract: The disclosure concerns circuitry for controlling a power transistor of a drive circuit arranged to drive an electrical component, the circuitry comprising: a variable current source adapted to set the level of a current for charging a control terminal of said power transistor; and a control circuit adapted to control said variable current source in a continuous manner based on a feedback voltage.

Abstract: The electronic device for protecting against a polarity reversal of a DC power supply voltage comprises, produced within one and the same integrated circuit, an N-channel main transistor (TP) mounted on the line of expected positive polarity of the power supply voltage and command means (MCM) for the main transistor comprising a charging pump circuit (CP), associated with a dynamic biasing circuit (MCTRL) for the substrate regions of active components connected to the main transistor.

Abstract: The detection of the presence of a load associated with a power MOS transistor integrated with its control circuit using a filtering time delay in generating a detection signal with respect to the occurrence of a turn-off control order of the power transistor, and where the filtering time delay is controlled with the power transistor switching time.

Abstract: A load supply control circuit comprising an integrated switch and its control circuit within a same package, and circuitry for controlling the level of the current flowing through the switch according to a difference in instantaneous temperature between the switch and its environment.

Abstract: The present invention relates to a potential generation circuit of charge pump type, this circuit including at least two stages formed of capacitors and of circuitry for isolating or interconnecting the capacitors, to generate an output potential by charge transfer between the stages. The circuit is driven by two control potentials oscillating between a first and a second value. The circuit includes a self-oscillating control circuit to generate control potentials, to eliminate time delays between charge and discharge phases.

Abstract: The detection of the presence of a load associated with a power MOS transistor integrated with its control circuit, using a delay determined taking into account the detection with respect to the occurrence of a turn-off control order of the power transistor, and where the filtering time is controlled with the power transistor switching time.