Abstract: An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations.

Abstract: The present disclosure relates to a method of controlling the manufacturing of integrated circuits, comprising steps of determining parameters that are characteristic of a curve of radiation intensity applied to a semiconductor wafer through a mask, in critical zones of structures to be formed on the wafer, for each of the critical zones, placing a measuring point in a multidimensional space each dimension of which corresponds to one of the characteristic parameters, placing control points in the multidimensional space that are spread around an area delimited by the measuring points, so as to delimit an envelope surrounding the area, for each control point, defining control structures each corresponding to a control point, generating a mask containing the control structures, applying a process involving the generated mask to a semiconductor wafer, and analyzing the control structures transferred to the wafer to detect any defects therein.

Abstract: The present disclosure relates to a method of controlling the manufacturing of integrated circuits, comprising steps of determining parameters that are characteristic of a curve of radiation intensity applied to a semiconductor wafer through a mask, in critical zones of structures to be formed on the wafer, for each of the critical zones, placing a measuring point in a multidimensional space each dimension of which corresponds to one of the characteristic parameters, placing control points in the multidimensional space that are spread around an area delimited by the measuring points, so as to delimit an envelope surrounding the area, for each control point, defining control structures each corresponding to a control point, generating a mask containing the control structures, applying a process involving the generated mask to a semiconductor wafer, and analyzing the control structures transferred to the wafer to detect any defects therein.