Patents by Inventor Antonio Facchetti

Antonio Facchetti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • N-Type Semiconductors and Related Devices
    Publication number: 20100204475
    Abstract: Mono- and diimide perylene and naphthalene compounds, N- and/or core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
    Type: Application
    Filed: December 29, 2009
    Publication date: August 12, 2010
    Inventors: Tobin J. Marks, Michael R. Wasielewski, Antonio Facchetti, Michael J. Ahrens, Brooks A. Jones, Myung-Han Yoon
  • Intercalated Superlattice Compositions and Related Methods for Modulating Dielectric Property
    Publication number: 20100173165
    Abstract: Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures.
    Type: Application
    Filed: March 16, 2010
    Publication date: July 8, 2010
    Inventors: Tobin J. Marks, Antonio Facchetti
  • Nanoscale self-assembled organic dielectrics for electronic devices
    Patent number: 7679079
    Abstract: Organic thin film transistor and related composite and device structures comprising an organic dielectric medium comprising, for instance, a non-linear optical chromophoric moiety.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: March 16, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti, Myung-Han Yoon
  • Intercalated superlattice compositions and related methods for modulating dielectric property
    Patent number: 7678463
    Abstract: Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: March 16, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti
  • Perylene n-type semiconductors and related devices
    Patent number: 7671202
    Abstract: Mono- and diimide perylene and naphthalene compounds, N- and core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
    Type: Grant
    Filed: January 26, 2005
    Date of Patent: March 2, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Michael R. Wasielewski, Antonio Facchetti, Michael J. Ahrens, Brooks A. Jones, Myung-Han Yoon
  • Semiconducting siloxane compositions for thin film transistor devices,and making and using the same
    Publication number: 20100038630
    Abstract: Semiconducting siloxane compositions and methods for manufacturing and use thereof in preparing organic thin-film transistors (OTFTs) are described. The semiconducting siloxane compositions can be crosslinked products of polymeric/monomeric compositions that include silane-derivatized crosslinkable organic p-type compounds and p-type semiconducting polymers.
    Type: Application
    Filed: October 22, 2007
    Publication date: February 18, 2010
    Inventors: Tobin J. Marks, Antonio Facchetti, He Yan
  • Silole-Based Polymers and Semiconductor Materials Prepared from the Same
    Publication number: 20100024883
    Abstract: The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I: wherein R1, R2, R3, R4, R5R6, Z, x, and x? are as defined herein. The present teachings also provide methods of preparing these polymers, and relate to various compositions, composites, and devices that incorporate these polymers.
    Type: Application
    Filed: September 21, 2009
    Publication date: February 4, 2010
    Inventors: Tobin J. Marks, Antonio Facchetti, Gang Lu, Hakan Usta, Joseph Letizia
  • Siloxane-Polymer Dielectric Compositions and Related Organic Field-Effect Transistors
    Publication number: 20100019237
    Abstract: Dielectric compositions comprising siloxane and polymeric components, as can be used in a range of transistor and related device configurations.
    Type: Application
    Filed: September 18, 2009
    Publication date: January 28, 2010
    Inventors: Tobin J. Marks, Antonio Facchetti, Myung-Han Yoon, He Yan
  • High-performance field effect transistors with self-assembled nanodielectrics
    Patent number: 7633130
    Abstract: Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.
    Type: Grant
    Filed: March 19, 2007
    Date of Patent: December 15, 2009
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Peide Ye, Antonio Facchetti, Gang Lu, Han Chung Lin
  • Carbonyl-Functionalized Thiophene Compounds and Related Device Structures
    Publication number: 20090267061
    Abstract: Carbonyl-functionalized oligo/polythiophene compounds, and related semiconductor components and related device structures.
    Type: Application
    Filed: April 29, 2009
    Publication date: October 29, 2009
    Inventors: Tobin J. Marks, Antonio Facchetti
  • Siloxane-polymer dielectric compositions and related organic field-effect transistors
    Patent number: 7605394
    Abstract: Dielectric compositions comprising siloxane and polymeric components, as can be used in a range of transistor and related device configurations.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: October 20, 2009
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti, Myung-Han Yoon, He Yan
  • Silole-based polymers and semiconductor materials prepared from the same
    Patent number: 7605225
    Abstract: The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I: wherein R1, R2, R3, R4, R5, R6, Z, x, and x? are as defined herein. The present teachings also provide methods of preparing these polymers, and relate to various compositions, composites, and devices that incorporate these polymers.
    Type: Grant
    Filed: May 11, 2007
    Date of Patent: October 20, 2009
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti, Gang Lu, Hakan Usta, Joseph Letizia
  • Solution-processed high mobility inorganic thin-film transistors
    Publication number: 20090206341
    Abstract: Fluid media comprising inorganic semiconductor components for fabrication of thin film transistor devices.
    Type: Application
    Filed: February 2, 2009
    Publication date: August 20, 2009
    Inventors: Tobin J. Marks, Antonio Facchetti, Paul D. Byrne, Hyun Sung Kim
  • Naphthalene-based semiconductor materials and methods of preparing and use thereof
    Patent number: 7569693
    Abstract: Provided are mono- and diimide naphthalene compounds for use in the fabrication of various device structures. In some embodiments, the naphthalene core of these compounds are mono-, di-, or tetra-substituted with cyano group(s) or other electron-withdrawing substituents or moieties. Such mono- and diimide naphthalene compounds also can be optionally N-substituted.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: August 4, 2009
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Michael R. Wasielewski, Antonio Facchetti, Brooks A. Jones
  • Carbonyl-functionalized thiophene compounds and related device structures
    Patent number: 7528176
    Abstract: Carbonyl-functionalized oligo/polythiophene compounds, and related semiconductor components and related device structures.
    Type: Grant
    Filed: September 14, 2005
    Date of Patent: May 5, 2009
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti
  • Transparent Nanowire Transistors and Methods for Fabricating Same
    Publication number: 20090050876
    Abstract: Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
    Type: Application
    Filed: June 2, 2008
    Publication date: February 26, 2009
    Inventors: Tobin J. Marks, David B. Janes, Sanghyun Ju, Peide Ye, Chongwu Zhou, Antonio Facchetti
  • Conjugated monomers and polymers and preparation and use thereof
    Publication number: 20090036643
    Abstract: Disclosed are new conjugated compounds (e.g., monomers and polymers) that include ladder-type moieties which can be used for preparing semiconducting materials. Such conjugated compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. Compounds of the present teachings also can exhibit ambipolar semiconducting activity. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability in ambient conditions.
    Type: Application
    Filed: July 31, 2008
    Publication date: February 5, 2009
    Inventors: Tobin J. Marks, Antonio Facchetti, Hakan Usta
  • n-Type Thiophene Semiconductors
    Publication number: 20080293937
    Abstract: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, ?,?-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
    Type: Application
    Filed: May 1, 2008
    Publication date: November 27, 2008
    Inventors: Tobin J. Marks, Antonio Facchetti
  • Organic semiconductor materials and precursors thereof
    Publication number: 20080249309
    Abstract: The present teachings provide novel organic semiconductor compounds and their soluble precursors, methods for preparing these compounds and precursors, as well as compositions, materials, articles, structures, and devices that incorporate such compounds.
    Type: Application
    Filed: January 23, 2008
    Publication date: October 9, 2008
    Inventors: Antonio Facchetti, Tobin J. Marks, He Yan
  • Gate dielectric structures, organic semiconductors, thin film transistors and related methods
    Publication number: 20080224127
    Abstract: Gate dielectric structures comprising an organic polymeric component, and organic semiconductor components, as can be used to fabricate thin film transistor devices.
    Type: Application
    Filed: August 22, 2007
    Publication date: September 18, 2008
    Inventors: Tobin J. Marks, Antonio Facchetti, Myung-Han Yoon