Patents by Inventor Antonio Facchetti

Antonio Facchetti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • N-type semiconductors and related devices
    Patent number: 7982039
    Abstract: Mono- and diimide perylene and naphthalene compounds, N- and/or core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: July 19, 2011
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Michael R. Wasielewski, Antonio Facchetti, Michael J. Ahrens, Brooks A. Jones, Myung-Han Yoon
  • Photopolymer-based dielectric materials and methods of preparation and use thereof
    Patent number: 7981989
    Abstract: Photopolymer-based dielectric materials are provided with methods for preparing the same. Composites and electronic devices including such dielectric materials also are provided.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: July 19, 2011
    Assignee: Polyera Corporation
    Inventors: He Yan, Antonio Facchetti, Tobin J. Marks
  • Organic Semiconductors and Devices Incorporating Same
    Publication number: 20110155247
    Abstract: Disclosed are thionated fused-ring (aromatic) imides and diimides that can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions.
    Type: Application
    Filed: December 29, 2010
    Publication date: June 30, 2011
    Inventors: Jordan Quinn, Yan Zheng, Zhihua Chen, Hakan Usta, Christopher Newman, He Yan, Antonio Facchetti
  • Carbonyl-functionalized thiophene compounds and related device structures
    Patent number: 7964650
    Abstract: Carbonyl-functionalized oligo/polythiophene compounds, and related semiconductor components and related device structures.
    Type: Grant
    Filed: April 29, 2009
    Date of Patent: June 21, 2011
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti
  • SEMICONDUCTOR MATERIALS AND METHODS OF PREPARATION AND USE THEREOF
    Publication number: 20110136333
    Abstract: Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
    Type: Application
    Filed: May 29, 2009
    Publication date: June 9, 2011
    Applicants: BASF SE, POLYERA CORPORATION
    Inventors: Antonio Facchetti, Zhihua Chen, Florian Doetz, Marcel Kastler, Tobin J. Marks, He Yan, Yan Zheng
  • SEMICONDUCTOR MATERIALS PREPARED FROM RYLENE-(PI-ACCEPTOR)COPOLYMERS
    Publication number: 20110120558
    Abstract: Disclosed are new semiconductor materials prepared from rylene-(?-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
    Type: Application
    Filed: February 5, 2009
    Publication date: May 26, 2011
    Inventors: Antonio Facchetti, Zhihua Chen, He Yan, Shaofeng Lu, Tobin J. Marks, Yan Zheng, Marcel Kastler, Subramanian Vaidyanathan, Florian Doetz, Silke Annika Koehler
  • Organic semiconductor materials and methods of preparing and use thereof
    Patent number: 7947837
    Abstract: Solution-processable organic n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the organic n-type semiconductor materials also are provided.
    Type: Grant
    Filed: October 24, 2007
    Date of Patent: May 24, 2011
    Assignee: Polyera Corporation
    Inventors: Tobin J. Marks, Antonio Facchetti, He Yan
  • n-Type thiophene semiconductors
    Publication number: 20110118483
    Abstract: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, ?,?-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
    Type: Application
    Filed: November 29, 2010
    Publication date: May 19, 2011
    Inventors: Tobin J. Marks, Antonio Facchetti
  • Conjugated monomers and polymers and preparation and use thereof
    Patent number: 7928249
    Abstract: Disclosed are new conjugated compounds (e.g., monomers and polymers) that include ladder-type moieties which can be used for preparing semiconducting materials. Such conjugated compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. Compounds of the present teachings also can exhibit ambipolar semiconducting activity. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability in ambient conditions.
    Type: Grant
    Filed: July 31, 2008
    Date of Patent: April 19, 2011
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti, Hakan Usta
  • Transparent nanowire transistors and methods for fabricating same
    Patent number: 7910932
    Abstract: Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
    Type: Grant
    Filed: June 2, 2008
    Date of Patent: March 22, 2011
    Assignees: Northwestern University, Purdue Research Foundation, University of Southern California
    Inventors: Tobin J. Marks, David B. Janes, Sanghyun Ju, Peide Ye, Chongwu Zhou, Antonio Facchetti
  • Diimide-based semiconductor materials and methods of preparing and using the same
    Patent number: 7902363
    Abstract: Diimide-based semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided.
    Type: Grant
    Filed: November 19, 2007
    Date of Patent: March 8, 2011
    Assignee: Polyera Corporation
    Inventors: Antonio Facchetti, Tobin J. Marks, He Yan
  • Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same
    Patent number: 7893265
    Abstract: The present teachings provide compounds of formulae I and II: where Q, Ra, R1, W, and n are as defined herein. The present teachings also provide methods of preparing compounds of formulae I and II, including methods of preparing compounds of formula II from compounds of formula I. The compounds disclosed herein can be used to prepare semiconductor materials and related composites and electronic devices.
    Type: Grant
    Filed: January 7, 2008
    Date of Patent: February 22, 2011
    Assignee: Polyera Corporation
    Inventors: Antonio Facchetti, Tobin J. Marks, He Yan
  • Acene-based organic semiconductor materials and methods of preparing and using the same
    Patent number: 7892454
    Abstract: Acene-based compounds that can be used to prepare n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including n-type semiconductor materials prepared from these compounds also are provided.
    Type: Grant
    Filed: November 19, 2007
    Date of Patent: February 22, 2011
    Assignees: Polyera Corporation, Northwestern University
    Inventors: Antonio Facchetti, Tobin J. Marks, Zhiming M. Wang
  • Crosslinked Polymeric Dielectric Materials And Electronic Devices Incorporating Same
    Publication number: 20110024729
    Abstract: Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.
    Type: Application
    Filed: April 20, 2010
    Publication date: February 3, 2011
    Inventors: Tobin J. Marks, Antonio Facchetti, Zhiming Wang, Hyuk-Jin Choi, Nae-Jeong Suh
  • NAPHTALENE-IMIDE SEMICONDUCTOR POLYMERS
    Publication number: 20100326527
    Abstract: Disclosed are new semiconductor materials prepared from naphthalene-imide copolymers. Such polymers can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions.
    Type: Application
    Filed: February 5, 2009
    Publication date: December 30, 2010
    Inventors: Antonio Facchetti, Zhihua Chen, He Yan, Yan Zheng, Jordan Quinn, Marcel Kastler, Florian Doetz, Silke Koehler
  • PERYLENE SEMICONDUCTORS AND METHODS OF PREPARATION AND USE THEREOF
    Publication number: 20100319778
    Abstract: The present teachings provide semiconducting compounds, materials prepared from such compounds, methods of preparing such compounds and semiconductor materials, as well as various compositions, composites, and devices that incorporate the compounds and semiconductor materials. Specifically, compounds of the present teachings can have higher electron-transport efficiency and higher solubility in common solvents compared to related representative compounds.
    Type: Application
    Filed: February 5, 2009
    Publication date: December 23, 2010
    Applicants: BASF SE, POLYERA CORPORATION
    Inventors: Marcel Kastler, Subramanian Vaidyanathan, Florian Doetz, Silke Annika Koehler, He Yan, Antonio Facchetti, Shaofeng Lu, Yan Zheng
  • Conjugated Polymers and Their Use in Optoelectronic Devices
    Publication number: 20100307594
    Abstract: Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.
    Type: Application
    Filed: May 21, 2010
    Publication date: December 9, 2010
    Inventors: Zhengguo Zhu, Martin Drees, Hualong Pan, Yan Yao, He Yan, Shaofeng Lu, Antonio Facchetti
  • n-Type thiophene semiconductors
    Patent number: 7842198
    Abstract: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, ?,?-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
    Type: Grant
    Filed: May 1, 2008
    Date of Patent: November 30, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti
  • PERYLENE-IMIDE SEMICONDUCTOR POLYMERS
    Publication number: 20100283047
    Abstract: Disclosed are new semiconductor materials prepared from perylene-imide copolymers. Such polymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
    Type: Application
    Filed: February 5, 2009
    Publication date: November 11, 2010
    Applicants: BASF SE, POLYERA CORPORATION
    Inventors: Antonio Facchetti, He Yan, Zhihua Chen, Marcel Kastler, Florian Doetz
  • Silole-based polymers and semiconductor materials prepared from the same
    Patent number: 7816480
    Abstract: The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I: wherein R1, R2, R3, R4, R5R6, Z, x, and x? are as defined herein. The present teachings also provide methods of preparing these polymers, and relate to various compositions, composites, and devices that incorporate these polymers.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: October 19, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti, Gang Lu, Hakan Usta, Joseph Letizia