Abstract: Technology is disclosed herein for quickly determining which erase block is bad if there is a failure in parallel erasing a set of erase blocks. The erase blocks may be tested individually in response to a fail of the parallel multi-block erase. A voltage generator ramps up the erase voltage from a steady state magnitude towards a target magnitude. The magnitude of the erase voltage is measured at a pre-determined time. If there is a defect then the erase voltage may fail to be above a threshold voltage after the ramp-up period. If the erase voltage is below the threshold voltage after the ramp-up period then the erase block may be marked as defective. If the erase voltage is above the threshold voltage after the ramp-up period then the erase block may be marked as good.

Abstract: Embodiments described herein aim to optimize the Erratic Program Detection (EPD) process by eliminating unnecessary operations and adjusting operations that are not optimized for the EPD process. For example, one optimization includes the EPD read operations being performed based on a read mode optimized for faster data retrieval. Further, another optimization includes a first read voltage ramping up at a rate that is faster than a ramp rate used to ramp up a read voltage during performance of a normal read operation. Another optimization also includes a read voltage kick operation between the EPD read operations being eliminated. Finally, another optimization includes parallelizing the scan operation with other ongoing operations.

Abstract: The nonvolatile memory includes a plurality of nonvolatile memory cells configured to store multiple data states; a word line connected to a control gate of at least one of the plurality of non-volatile memory cells; a control gate line to supply a control gate signal; a word line switch connected between the word line and the control gate line to control the potential applied to the word line from the control gate line; and a memory controller circuit. The memory controller circuit is configured to control a word line potential on the word line and a control gate potential on the control gate line and to control a state of the control gate. The memory controller circuit, when the nonvolatile memory transitions to a not-on state, is further configured to turn off the word line switch and to charge the control gate line to a charged potential.

Abstract: The nonvolatile memory includes a plurality of nonvolatile memory cells configured to store multiple data states; a word line connected to a control gate of at least one of the plurality of non-volatile memory cells; a control gate line to supply a control gate signal; a word line switch connected between the word line and the control gate line to control the potential applied to the word line from the control gate line; and a memory controller circuit. The memory controller circuit is configured to control a word line potential on the word line and a control gate potential on the control gate line and to control a state of the control gate. The memory controller circuit, when the nonvolatile memory transitions to a not-on state, is further configured to turn off the word line switch and to charge the control gate line to a charged potential.

Abstract: As part of the erase operation for a memory block, one or more post-erase tests can be incorporated into the erase operation to see whether the block has grown any defects. After erasing a block and verifying the erase, the post-erase tests can be performed on the block. As these test involve biasing the block and performing a sensing operation, these post erase tests come with a time penalty. To reduce the associated time penalty and improve memory performance while incorporating the defect tests into the erase process, when biasing the memory array for the post-erase defect tests different ramp rates can be used. In particular, faster ramp rates for bias levels, such those applied to the word lines of the block, are used for the post-erase tests than are used for the same bias level when performing the standard read, program verify, or read verify operations.

Abstract: An apparatus is provided that includes a control circuit coupled to a plurality of non-volatile memory cells disposed in a plurality of planes. The control circuit is configured to concurrently erase a block of memory cells in each of the plurality of planes, determine that the concurrent erase failed, disconnect a first one of the planes from the plurality of planes to form first remaining planes, and concurrently erase a block of memory cells in each of the first remaining planes.

Abstract: Technology is disclosed herein for quickly determining which erase block is bad if there is a failure in parallel erasing a set of erase blocks. The erase blocks may be tested individually in response to a fail of the parallel multi-block erase. A voltage generator ramps up the erase voltage from a steady state magnitude towards a target magnitude. The magnitude of the erase voltage is measured at a pre-determined time. If there is a defect then the erase voltage may fail to be above a threshold voltage after the ramp-up period. If the erase voltage is below the threshold voltage after the ramp-up period then the erase block may be marked as defective. If the erase voltage is above the threshold voltage after the ramp-up period then the erase block may be marked as good.

Abstract: Technology is disclosed herein in which a duration of a program pulse used to program non-volatile memory cells such as NAND may be increased responsive to a programming failure using a shorter duration program pulse. The duration of at least one program pulse may be increased for at least one group of memory cells in response to a failure to program a group using a default program pulse duration. The group that experiences the increased duration program pulse may be the same group for which the program operation failed using the shorter program pulse or may be a different group than the group for which the program operation failed using the shorter program pulse.

Abstract: The nonvolatile memory includes a plurality of nonvolatile memory cells configured to store multiple data states; a word line connected to a control gate of at least one of the plurality of non-volatile memory cells; a control gate line to supply a control gate signal; a word line switch connected between the word line and the control gate line to control the potential applied to the word line from the control gate line; and a memory controller circuit. The memory controller circuit is configured to control a word line potential on the word line and a control gate potential on the control gate line and to control a state of the control gate. The memory controller circuit, when the nonvolatile memory transitions to a not-on state, is further configured to turn off the word line switch and to charge the control gate line to a charged potential.

Abstract: The nonvolatile memory includes a plurality of nonvolatile memory cells configured to store multiple data states; a word line connected to a control gate of at least one of the plurality of non-volatile memory cells; a control gate line to supply a control gate signal; a word line switch connected between the word line and the control gate line to control the potential applied to the word line from the control gate line; and a memory controller circuit. The memory controller circuit is configured to control a word line potential on the word line and a control gate potential on the control gate line and to control a state of the control gate. The memory controller circuit, when the nonvolatile memory transitions to a not-on state, is further configured to turn off the word line switch and to charge the control gate line to a charged potential.

Abstract: Apparatus and methods are described to reduce program disturb for a memory string with a partial select gate drain, which is partially cut by a shallow trench. The memory string with a partial select gate drain is linked with a neighboring full select gate drain that during its programming can cause a program disturb in the memory string with a partial select gate drain. The bias voltage applied to the selected full select gate drain can be controlled from a high state for low memory program states to a lower state for the high memory program states. The high data states may cause program disturb. The reduction in the bias voltage can match a reduction in the bias voltage applied to the bit lines to reduce the program disturb while providing adequate signal to program the high states on the memory string of the full select gate drain.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to one of a plurality of word lines and arranged in strings and configured to retain a threshold voltage corresponding to one of a plurality of memory states. A control circuit is coupled to the plurality of word lines and strings and is configured to erase the memory cells using a stripe erase operation in response to determining a cycle count is less than a predetermined cycle count maximum threshold. The control circuit is also configured to perform a dummy cycle operation in response to determining the cycle count is not less than the predetermined cycle count maximum threshold.

Abstract: The programming techniques include the step of providing a memory device that includes a plurality of memory cells that are divided into at least two groups including a first group and a second group. The first group includes memory cells that are coupled to full select gate drains (SGDs), and the second group includes memory cells that are coupled to partial SGDs. The method continues with the step of applying a programming voltage to a selected word line that includes at least one memory cell of the first group and at least one memory cell of the second group. Simultaneous to the application of the programming voltage, the method continues with applying voltages to bit lines coupled to memory cells. The voltages being determined based on if the memory cells are of the first group or are of the second group.

Abstract: A method for detecting a “slow to erase” condition of a non-volatile memory structure, wherein the method comprises initiating an erase/verify memory operation with respect to the memory structure, wherein the erase/verify memory operation comprises applying an erase verify voltage according to an alternating word line scheme; following the erase/verify memory operation, determining if a first bit scan mode criteria is satisfied; and, if the first bit scan mode criteria is satisfied, initiating a read/verify memory operation wherein, the read/verify memory operation comprises applying a read-pass voltage according to an all word line scheme, and a magnitude of the read-pass voltage is greater than a magnitude of the erase verify voltage. Following the read/verify memory operation, the method also comprises determining if a second bit scan mode criteria is satisfied and, if the criteria is not satisfied, designating the memory structure with a fail status.

Abstract: A method for detecting a “slow to erase” condition of a non-volatile memory structure, wherein the method comprises initiating an erase/verify memory operation with respect to the memory structure, wherein the erase/verify memory operation comprises applying an erase verify voltage according to an alternating word line scheme; following the erase/verify memory operation, determining if a first bit scan mode criteria is satisfied; and, if the first bit scan mode criteria is satisfied, initiating a read/verify memory operation wherein, the read/verify memory operation comprises applying a read-pass voltage according to an all word line scheme, and a magnitude of the read-pass voltage is greater than a magnitude of the erase verify voltage. Following the read/verify memory operation, the method also comprises determining if a second bit scan mode criteria is satisfied and, if the criteria is not satisfied, designating the memory structure with a fail status.

Abstract: The programming techniques include the step of providing a memory device that includes a plurality of memory cells that are divided into at least two groups including a first group and a second group. The first group includes memory cells that are coupled to full select gate drains (SGDs), and the second group includes memory cells that are coupled to partial SGDs. The method continues with the step of applying a programming voltage to a selected word line that includes at least one memory cell of the first group and at least one memory cell of the second group. Simultaneous to the application of the programming voltage, the method continues with applying voltages to bit lines coupled to memory cells. The voltages being determined based on if the memory cells are of the first group or are of the second group.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to one of a plurality of word lines and arranged in strings and configured to retain a threshold voltage corresponding to one of a plurality of memory states. A control circuit is coupled to the plurality of word lines and strings and is configured to erase the memory cells using a stripe erase operation in response to determining a cycle count is less than a predetermined cycle count maximum threshold. The control circuit is also configured to perform a dummy cycle operation in response to determining the cycle count is not less than the predetermined cycle count maximum threshold.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to word lines and arranged in strings and configured to retain a threshold voltage corresponding to memory states. A control circuit is configured to program the memory cells to reach one of a plurality of verify levels each corresponding the memory states using a series of voltage pulses applied to the word lines during a program operation. The control circuit determines an intermediate quantity of the series of voltage pulses necessary for the memory cells associated with a selected one of the memory states to reach the one of the plurality of verify levels corresponding to the selected one of the memory states. The control circuit ends the program operation after a maximum allowable quantity of the series of voltage pulses are utilized. The maximum allowable quantity is selected based on the intermediate quantity.

Abstract: Apparatus and methods are described to reduce program disturb for a memory string with a partial select gate drain, which is partially cut by a shallow trench. The memory string with a partial select gate drain is linked with a neighboring full select gate drain that during its programming can casuse a program disturb in the memory string with a partial select gate drain. The bias voltage applied to the selected full select gate drain can be controlled from a high state for low memory program states to a lower state for the high memory program states. The high data states may cause program disturb. The reduction in the bias voltage can match a reduction in the bias voltage applied to the bit lines to reduce the program disturb while providing adequate signal to program the high states on the memory string of the full select gate drain.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes a plurality of memory cells. Each of the plurality of memory cells is connected to one of a plurality of word lines and is arranged in one of a plurality of blocks. Each of the plurality of memory cells is configured to retain a threshold voltage corresponding to one of a plurality of data states. A control circuit is coupled to the plurality of word lines and is configured to detect at least one use characteristic of the memory apparatus. The control circuit adjusts a verify voltage level by one of a plurality of verify level offsets based on the at least one use characteristic that is detected. The verify voltage level is applied to the one of the plurality of word lines selected for programming following an application of a program voltage during a program operation.