Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.

Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.

Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.

Abstract: Circuits are disclosed providing uniform voltage swing across transmit switches for improved device performance. An integrated circuit (IC) formed on a die includes a switch having one or more field effect transistors (FETs) defining an RF signal path between an input port and an output port, each FET having a body node, and the switch being configured to be capable of being in ON and OFF states. The IC further includes a voltage distribution circuit coupled to the switch and configured to reduce voltage distribution variation across the switch, the voltage distribution circuit including one or more elements coupled to a selected body node of one or more FETs to reduce voltage distribution variation across the switch when the switch is in an ON state and is encountered by a respective RF signal at the input port.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body.

Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing uniform voltage swing across a transmit switch for improved device performance. A switching circuit includes a switch having field effect transistors (FETs) defining an RF signal path between the input port and the output port, the switch configured to be capable of being in a first state corresponding to the input and output ports being electrically connected so as to allow passage of the RF signal therebetween, and a second state corresponding to the input and output ports being electrically isolated. The switching circuit includes a voltage distribution circuit configured to reduce voltage distribution variation across the switch, including one or more elements coupled to a selected body node of one or more FETs so as to reduce voltage distribution variation across the switch when the switch is in the first state and encountered by an RF signal at the input port.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body.

Abstract: Radio-frequency (RF) switch circuits are disclosed having adjustable resistance to provide improved switching performance. RF switch circuits include at least one field-effect transistor (FET) disposed between first and second nodes, each of the FET having a respective gate and body. An adjustable-resistance circuit is connected to either or both of the respective gate and body of the FET(s).

Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing uniform voltage swing across a transmit switch for improved device performance. A switching circuit includes a switch having field effect transistors (FETs) defining an RF signal path between the input port and the output port, the switch configured to be capable of being in a first state corresponding to the input and output ports being electrically connected so as to allow passage of the RF signal therebetween, and a second state corresponding to the input and output ports being electrically isolated. The switching circuit includes a voltage distribution circuit configured to reduce voltage distribution variation across the switch, including one or more elements coupled to a selected body node of one or more FETs so as to reduce voltage distribution variation across the switch when the switch is in the first state and encountered by an RF signal at the input port.

Abstract: Radio-frequency (RF) switch circuits are disclosed having transistor gate voltage compensation to provide improved switching performance. RF switch circuits include a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate. A compensation network including a coupling circuit couples the gates of each pair of neighboring FETs.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body.

Abstract: Radio-frequency (RF) switch circuits are disclosed having adjustable resistance to provide improved switching performance. RF switch circuits include at least one field-effect transistor (FET) disposed between first and second nodes, each of the FET having a respective gate and body. An adjustable-resistance circuit is connected to either or both of the respective gate and body of the FET(s).

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a switch having a stack of field-effect transistors (FETs) connected in series between first and second nodes. A capacitor connected in series with the switch is configured to inhibit a low-frequency blocker signal from mixing with a fundamental-frequency signal in the switch.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

Abstract: Radio-frequency (RF) switch circuits are disclosed having one or more transistors coupled to provide improved switching performance. RF switches include at least one field-effect transistor (FET) disposed between first and second nodes, each the at least one FET having a respective body and a corresponding gate. A coupling circuit couples the respective body and corresponding gate of the at least one FET. The coupling circuit may include a diode in series with a resistor and may be configured to facilitate removal of excess charge from the respective body.

Abstract: The various embodiments of the present disclosure relate generally to inverse-mode Radio-Frequency (“RF”) switching circuits and methods of using the same. An embodiment of the present invention provides an inverse-mode RF switching circuit. The inverse-mode RF switching circuit comprises a bipolar transistor, a shunt element, a first RF channel, and a second RF channel. The bipolar transistor comprises a base, a collector, and an emitter, wherein the base and emitter are in electrical communication first via a base-emitter junction and second via an electrical connection element. The shunt element is in electrical communication with the collector. The first RF channel is in electrical communication with the base and emitter. The second RF channel is in electrical communication with the collector and the shunt element. The base-collector junction operates as a switching diode between the first RF channel and the second RF channel.

Abstract: The various embodiments of the present disclosure relate generally to inverse-mode Radio-Frequency (“RF”) switching circuits and methods of using the same. An embodiment of the present invention provides an inverse-mode RF switching circuit. The inverse-mode RF switching circuit comprises a bipolar transistor, a shunt element, a first RF channel, and a second RF channel. The bipolar transistor comprises a base, a collector, and an emitter, wherein the base and emitter are in electrical communication first via a base-emitter junction and second via an electrical connection element. The shunt element is in electrical communication with the collector. The first RF channel is in electrical communication with the base and emitter. The second RF channel is in electrical communication with the collector and the shunt element. The base-collector junction operates as a switching diode between the first RF channel and the second RF channel.