Abstract: Disclosed are a system, a method and a computer program product for accurately modeling the performance of a body-contacted, asymmetric double gate, dynamically depleted (DD), semiconductor-on-insulator (SOI) field effect transistor (FET). This modeling can be performed, using iterative processing, to determine the conditions (e.g., back gate bias voltage, front gate bias voltage, body resistance and body charge) under which the FET channel region transitions from being in a partially depleted (PD) state such that the FET functions as a PD SOI FET to being in a fully depleted (FD) state such that the FET functions as a FD SOI FET. Once these conditions are known (i.e., once the model is generated), the DD SOI FET can be incorporated into top-level integrated circuit designs with specifications that either meet the conditions or do not meet the conditions, depending upon the desired function of the DD SOI FET within the integrated circuit.

Abstract: A method of searching for information in a mobile device is provided. The method includes identifying at least one log for operational events based on at least one input parameter, identifying at least one element existing within the at least one log based on the at least one input parameter, fetching contents related to the at least one element from the at least one log, and displaying a portion of the contents.

Abstract: Disclosed are a system, a method and a computer program product for accurately modeling the performance of a body-contacted, asymmetric double gate, dynamically depleted (DD), semiconductor-on-insulator (SOI) field effect transistor (FET). This modeling can be performed, using iterative processing, to determine the conditions (e.g., back gate bias voltage, front gate bias voltage, body resistance and body charge) under which the FET channel region transitions from being in a partially depleted (PD) state such that the FET functions as a PD SOI FET to being in a fully depleted (FD) state such that the FET functions as a FD SOI FET. Once these conditions are known (i.e., once the model is generated), the DD SOI FET can be incorporated into top-level integrated circuit designs with specifications that either meet the conditions or do not meet the conditions, depending upon the desired function of the DD SOI FET within the integrated circuit.

Abstract: A method for aggregating communication records is provided and includes obtaining a communication report corresponding to each of one or more communication events. The communication events indicate an occurrence of communication between a first user and a second user using a communication mode from among a plurality of communication modes. Each of the communication records are classified into one or more communication categories based on one or more classification parameters. The communication records are aggregated based on the classifying weightage assigned to one or more contextual parameters corresponding to each of the plurality of communication records. The contextual parameters indicate relevance of the corresponding communication record and the communication mode corresponding to the communication record.