Abstract: A system for depositing a layer on a substrate includes a processing chamber, a gas injecting port for introducing gas into the system, a gas distribution plate disposed between the gas injecting port and the processing chamber, the gas distribution plate including holes therein, and an inject insert liner assembly received within the system adjacent to the gas distribution plate and upstream from the processing chamber. The inject insert liner assembly defines gas flow channels therein extending along a lengthwise direction of the system, wherein each channel includes an inlet and an outlet, and at least one channel is tapered along the lengthwise direction of the system in at least one of a vertical or horizontal direction. The inject insert liner assembly has the same number of gas flow channels as the number of holes in the gas distribution plate.

Abstract: A method of depositing an epitaxial layer on a silicon wafer is described. The silicon wafer has a diameter, and is disposed within a processing chamber within a deposition system. The deposition includes a gas distribution plate in fluid communication with a gas injecting port and the processing chamber. The method includes the steps of introducing a process gas into the system from the gas injecting port, flowing the process gas through a flow channel extending along a lengthwise direction of the system and being tapered along the lengthwise direction of the system in at least one of a vertical or horizontal direction, wherein the flow channel is defined by an inject insert liner assembly adjacent to the gas distribution plate, and depositing an epitaxial layer on the wafer at a deposition rate of at least about 2.3 micrometers per minute.

Abstract: A system for depositing a layer on a substrate includes a processing chamber, a gas injecting port for introducing gas into the system, a gas distribution plate disposed between the gas injecting port and the processing chamber, the gas distribution plate including holes therein, and an inject insert liner assembly received within the system adjacent to the gas distribution plate and upstream from the processing chamber. The inject insert liner assembly defines gas flow channels therein extending along a lengthwise direction of the system, wherein each channel includes an inlet and an outlet, and at least one channel is tapered along the lengthwise direction of the system in at least one of a vertical or horizontal direction. The inject insert liner assembly has the same number of gas flow channels as the number of holes in the gas distribution plate.

Abstract: A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.

Abstract: A gas distribution manifold for a chemical vapor deposition reactor includes a first gas distribution zone including a central gas port located in a central portion of the manifold. The manifold also includes a second gas distribution zone including at least two intermediate ports adjacent the central gas port. The manifold further includes a third gas distribution zone including at least two outer ports, each one of the outer ports spaced from the central gas port by one of the intermediate ports. The gas distribution manifold includes a fourth gas distribution zone comprising at least two edge ports, each edge port being spaced from the central outlet port by at least one of the intermediate and outer ports.