Abstract: A valve mounting structure includes a mounting portion, a valve, and a cushion. The valve includes a valve seat having a cylindrical joining portion that receives the mounting portion inserted thereto, or is inserted to the mounting portion. The cushion is arranged between the mounting portion and the joining portion, and fixed to each of the mounting portion and the joining portion. In a case where one of the mounting portion and the joining portion is a first portion and the other is a second portion, the first portion includes a peripheral wall and an opening portion without the peripheral wall formed therein. A fixing portion in which the second portion and the cushion are fixed to each other is at least partly arranged at a position adjacent to the opening portion along a radial direction of the mounting portion.

Abstract: A valve mounting structure includes a mounting portion, a valve, and a cushion. The valve includes a valve seat having a cylindrical joining portion that receives the mounting portion inserted thereto, or is inserted to the mounting portion. The cushion is arranged between the mounting portion and the joining portion, and fixed to each of the mounting portion and the joining portion. In a case where one of the mounting portion and the joining portion is a first portion and the other is a second portion, the first portion includes a peripheral wall and an opening portion without the peripheral wall formed therein. A fixing portion in which the second portion and the cushion are fixed to each other is at least partly arranged at a position adjacent to the opening portion along a radial direction of the mounting portion.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: An exhaust heat recovery device comprises an exhaust pipe, a shell member, a heat exchange portion, an inflow portion, a valve, a driving portion that generates a driving force for driving the valve, and a transmitting portion that transmits the driving force generated by the driving portion to the valve. The driving portion comprises an expansion portion that expands when an external electrical signal is inputted thereto, and a linearly moving portion that extends according to expansion of the expansion portion.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: An exhaust heat recovery device comprises an exhaust pipe, a shell member, a heat exchange portion, an inflow portion, a valve, a driving portion that generates a driving force for driving the valve, and a transmitting portion that transmits the driving force generated by the driving portion to the valve. The driving portion comprises an expansion portion that expands when an external electrical signal is inputted thereto, and a linearly moving portion that extends according to expansion of the expansion portion.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: In an exhaust heat recovery device, exhaust gas flows out from a heat exchange outflow port into a heat exchange passage. The exhaust gas having flowed out into the heat exchange passage flows in a radial direction from an inner side to an outer side of a heat exchanger to reach a second heat exchange passage from a first heat exchange passage. A heat exchange is performed in the heat exchanger while the exhaust gas flows.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: In an exhaust heat recovery device, exhaust gas flows out from a heat exchange outflow port into a heat exchange passage, the exhaust gas having flowed out into the heat exchange passage flows in a radial direction from an inner side to an outer side of a heat exchanger to reach a second heat exchange passage from a first heat exchange passage, and a heat exchange is performed in the heat exchanger while the exhaust gas flows.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: An exhaust valve structure includes: an inner cylindrical portion that forms an introducing passage of exhaust gas and that has a stay member; a valve element that closes or opens the introducing passage; and a wire mesh that is fixed to the stay member and that contacts the valve element when the introducing passage is closed. The wire mesh is formed in a shape such that a diameter of the wire mesh gradually increases toward a downstream side of the introducing passage and a load exerted on the stay member when the valve element contacts the wire mesh is distributed in a diameter-increasing direction in which the diameter of the wire mesh increases.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.