Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: A ceramic heater includes a ceramic resistor, at least one metallic film, and at least one foam metal member. The at least one metallic film is formed on at least one surface, of the ceramic resistor, which is assigned as at least one electrode plane. The at least one foam metal member is formed in a plate-like shape. The at least one foam metal member covers and is attached to the at least one metallic film.

Abstract: An exhaust valve structure includes: an inner cylindrical portion that forms an introducing passage of exhaust gas and that has a stay member; a valve element that closes or opens the introducing passage; and a wire mesh that is fixed to the stay member and that contacts the valve element when the introducing passage is closed. The wire mesh is formed in a shape such that a diameter of the wire mesh gradually increases toward a downstream side of the introducing passage and a load exerted on the stay member when the valve element contacts the wire mesh is distributed in a diameter-increasing direction in which the diameter of the wire mesh increases.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: A method of manufacturing a semiconductor light-emitting device assembly includes providing light-emitting device portions on a light-emitting device production substrate so as to be separated from each other, each of the light-emitting device portions including a laminated structure, in which a first compound semiconductor layer, an active layer, and a second compound semiconductor layer are sequentially laminated, and a second electrode provided on the second compound semiconductor layer; forming an insulating layer on an entire surface so as to have an opening portion in which a top central portion of the second electrode is exposed; providing an extraction electrode to each light-emitting device portion so as to be patterned to extend from a top surface of the second electrode to the insulating layer; and forming an adhesive layer so as to cover an entire surface and attaching a support substrate using the adhesive layer.

Abstract: An alternating current driven type plasma display device which does not increase a driving voltage (discharge voltage) and does not increase a time delay of discharge is provided. The alternating current driven type plasma display device contains a first panel having a plurality of first electrodes formed on a first substrate and a dielectric layer formed on the first substrate and the first electrodes and a second panel, in which the first panel and the second panel are bonded to each other in circumferential portions thereof, the dielectric layer is constituted by SiOX, and bonding density of H2O contained in SiOX is 3.0×1020 Bonds/cm3 or more.

Abstract: An alternating current driven type plasma display device which does not increase a driving voltage (discharge voltage) and does not increase a time delay of discharge is provided. The alternating current driven type plasma display device contains a first panel having a plurality of first electrodes formed on a fist substrate and a dielectric layer formed on the first substrate and the first electrodes and a second panel, in which the first panel and the second panel are bonded to each other in circumferential portions thereof, the dielectric layer is constituted by SiOX, and bonding density of H2O contained in SiOX is 3.0×1020 Bonds/cm3 or more.

Abstract: The present invention provides a plasma display device having an even and homogeneous dielectric layer and permitting a small luminance change over time. The plasma display device includes a first substrate, a second substrate disposed facing an inside of the first substrate so as to form a hermetically sealed discharge space therebetween, at least one pair of discharge sustain electrodes which are formed inside the first substrate 11 and forming a discharge gap therebetween, and the dielectric layer formed inside the first substrate so as to cover the discharge sustain electrodes. The dielectric layer has a low degassing film such that a total amount of degassing when increasing a temperature from room temperature to 1000° C. has hydrogen molecules not exceeding 1×1020 particles/cm3 and water not exceeding 5×1020 particles/cm3.

Abstract: The present invention provides a plasma display device having an even and homogeneous dielectric layer and permitting a small luminance change over time. The plasma display device includes a first substrate, a second substrate disposed facing an inside of the first substrate so as to form a hermetically sealed discharge space therebetween, at least one pair of discharge sustain electrodes which are formed inside the first substrate 11 and forming a discharge gap therebetween, and the dielectric layer formed inside the first substrate so as to cover the discharge sustain electrodes. The dielectric layer has a low degassing film such that a total amount of degassing when increasing a temperature from room temperature to 1000° C. has hydrogen molecules not exceeding 1×1020 particles/cm3 and water not exceeding 5×1020 particles/cm3.

Abstract: The present invention provides a plasma display device having an even and homogeneous dielectric layer and permitting a small luminance change over time. The plasma display device includes a first substrate, a second substrate disposed facing an inside of the first substrate so as to form a hermetically sealed discharge space therebetween, at least one pair of discharge sustain electrodes which are formed inside the first substrate 11 and forming a discharge gap therebetween, and the dielectric layer formed inside the first substrate so as to cover the discharge sustain electrodes. The dielectric layer has a low degassing film such that a total amount of degassing when increasing a temperature from room temperature to 1000° C. has hydrogen molecules not exceeding 1×1020 particles/cm3 and water not exceeding 5×1020 particles/cm3.