Abstract: A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present.

Abstract: In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer.

Abstract: A method for reducing defects in the profiles of chemically amplified photoresists used in deep ultraviolet (DUV) and laser lithography. Chemically amplified resists are typically highly sensitive to nitrogen-bearing surface contaminants, and photoresist layers formed on contaminated surfaces exhibit profile defects such as resist footing and T-topping. These defects are reduced by pretreating the surface of a semiconductor device or other structure with a cleansing etchant prior to the formation of the photoresist layer. The cleansing etchant is a solution of sulfuric acid and an oxidizing agent known as “piranha.

Abstract: In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer.

Abstract: In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer.

Abstract: In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer.

Abstract: In one aspect, the invention includes a semiconductor processing method comprising a) forming a metal silicide layer over a substrate; b) depositing a layer comprising silicon, nitrogen and oxygen over the metal silicide layer; and c) while the layer comprising silicon, nitrogen and oxygen is over the metal silicide layer, annealing the metal silicide layer.

Abstract: A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present.

Abstract: A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present.

Abstract: In one aspect, the invention includes a semiconductor processing method comprising a) forming a metal silicide layer over a substrate; b) depositing a layer comprising silicon, nitrogen and oxygen over the metal silicide layer; and c) while the layer comprising silicon, nitrogen and oxygen is over the metal silicide layer, annealing the metal silicide layer.

Abstract: Inventive antireflective structures comprise a semiconductor substrate having thereon a combination of a plurality of layers that either that absorb reflected light or that dissipate reflected light into patterns and intensities that do not substantially alter photoresist material on the semiconductor substrate. The semiconductor substrate has formed thereon a feature having a width of less than about 0.25 microns. Antireflective structures contemplated include a first layer of polysilicon and first layer of silicon nitride material that is formed upon the first layer of polysilicon. The antireflective structure has the ability to scatter unabsorbed light into patterns and intensities that are substantially ineffective to alter photoresist material exposed to said patterns and intensities.

Abstract: A method of fabricating an electronic device includes forming a pattern of a resist material on a substrate. The resist includes a polymer and an acid-generating agent. The resist pattern is exposed to radiation to activate the acid-generating agent, and a neutralizing agent is provided to reduce the bond-breaking activity of the acid with respect to protective groups attached to the resist polymer. The substrate can subsequently be etched with the resist pattern defining an etch mask. By activating the acid-generating agent in the resist pattern and neutralizing the acid prior to performing an RIE or other dry etch, shrinkage of the resist pattern during the etch process can be reduced or eliminated.

Abstract: Inventive antireflective structures comprise a semiconductor substrate having hereon a combination of a plurality of layers that either that absorb reflected light or that dissipate reflected light into patterns and intensities that do not substantially alter photoresist material on the semiconductor substrate. The semiconductor substrate has formed thereon a feature having a width of less than about 0.25 microns. Antireflective structures contemplated include a first layer of polysilicon and first layer of silicon nitride material that is formed upon the first layer of polysilicon. The antireflective structure has the ability to scatter unabsorbed light into patterns and intensities that are substantially ineffective to alter photoresist material exposed to said patterns and intensities.

Abstract: A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si.sub.3 N.sub.4 outwardly of the substrate, the outer Si.sub.3 N.sub.4 layer having an outer surface; c) covering the outer Si.sub.3 N.sub.4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si.sub.3 N.sub.4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si.sub.3 N.sub.4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si.sub.3 N.sub.4 outwardly of the substrate, the outer Si.sub.3 N.sub.4 layer having an outer surface; ii) transforming the outer Si.sub.3 N.sub.

Abstract: Inventive antireflective structures comprise a semiconductor substrate having thereon a combination of a plurality of layers that either that absorb reflected light or that dissipate reflected light into patterns and intensities that do not substantially alter photoresist material on the semiconductor substrate. The semiconductor substrate has formed thereon a feature having a width of less than about 0.25 microns. Antireflective structures contemplated include a first layer of polysilicon and first layer of silicon nitride material that is formed upon the first layer of polysilicon. The antireflective structure has the ability to scatter unabsorbed light into patterns and intensities that are substantially ineffective to alter photoresist material exposed to said patterns and intensities.

Abstract: A pad oxide is formed on a silicon substrate followed by a layer of polysilicon about 100 .ANG. thick. A silicon nitride layer is formed over said polysilicon layer then patterned with a first, fluorine-based, etch process to expose selected areas of the polysilicon layer. Then the exposed areas of polysilicon are removed using a second, chlorine-based, etch process fundamentally different from the first etch process. The high selectivity of the first etch process for nitride combined with the high selectivity of the second etch process for oxide, results in negligible CD loss in the overall process.