Abstract: A semiconductor layer of In.sub.1-x Tl.sub.x Q carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As.sub.1-y P.sub.y and 0<x<1, 0<y<1.

Abstract: A process is disclosed for forming shaped superconductors of the metal oxide type by electrophoretic deposition of superconducting particles which comprises providing particulate superconducting material of the metal oxide type coated with a fusible binder, electrophoretically depositing such coated superconducting particles on a substrate, heating the coated substrate sufficiently to fuse the binder to the substrate, fabricating the coated substrate into a desired shape, removing the binder, and then sintering the coated substrate to sinter the superconducting particles together. In a preferred embodiment the process further comprises immersing the coated substrate in an electrostatic field during the fusion step to both orient and maintain the superconducting particles in a desired direction.

Abstract: The present invention relates to solid materials for use as electrolyte for a fuel cell, or for a sensor, or as a catalyst. Representative structures include lanthanum fluoride, lead potassium fluoride, lead bismuth fluoride, lanthanum strontium fluoride, lanthan strontium lithium fluoride, calcium uranium, cesium fluoride, PbSnFy, KSn.sub.2 F.sub.4, SrCl.sub.2.KCl, LaOF.sub.2, PbSnF.sub.8.PbSnO, lanthanum oxyfluoride, oxide, calcium fluoride, SmNdFO, and the like. In another aspect, the present invention relates to a composite and a process to obtain it of the formula:A.sub.1-y ByQO.sub.3having a perovskite or a perovskite-type structure as an electrode catalyst in combination with:A.sub.y B.sub.1-y F.sub.

Abstract: A low dislocation density semiconductor device includes a first semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The semiconductor compound usually has a large dislocation density. A predetermined position of the alloying atoms in the compound lattice structure can substantially reduce the compound dislocation density. Energy is applied to the alloying atoms so they are at the predetermined positions. The number of alloying atoms causes the semiconductor compound solubility limit to be exceeded. The layer is formed on a substrate of the III-V or II-VI semiconductor, such as gallium arsenide or another semiconductor, such as silicon or on an insulator such as sapphire. In the latter cases, the layer is formed on an intermediate layer having a lattice constant between that of the substrate and semiconductor compound.

Abstract: A low dislocation density semiconductor device includes a first semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The semiconductor compound usually has a large dislocation density. A predetermined position of the alloying atoms in the compound lattice structure can substantially reduce the compound dislocation density. Energy is applied to the alloying atoms so they are at the predetermined positions. The number of alloying atoms causes the semiconductor compound solubility limit to be exceeded. The layer is formed on a substrate of the III-V or II-VI semiconductor, such as gallium arsenide or another semiconductor, such as silicon or on an insulator such as sapphire. In the latter cases, the layer is formed on an intermediate layer having a lattice constant between that of the substrate and semiconductor compound.

Abstract: A thermal detector and method of making the same in which a suspension of binder-encapsulated copper particles is produced by comminuting a chip formed by dry-milling a major amount of copper particles with a minor amount of a binder and a charge director to produce the chip of copper particles in an encapsulant having functional sites. The bits of comminuted material are wet-milled with a major amount of a low-boiling aliphatic hydrocarbon to produce a suspension from which encapsulated copper particles are deposited on a substrate by electrophoresis. The deposit is electron-beam cured to form the detector.

Abstract: The present invention relates to solid materials for use as solid electrolytes for a fuel cell. Specifically, the invention relates to a solid O.sup.2- conducting material for use as an electrolyte for a fuel cell, comprising:a monocrystal or polycrystal structure of the formula: A.sub.1-x B.sub.x Z, whereinA is independently selected from lanthanum, cerium, neodymium, praseodymium, scandium or mixtures thereof;B is independently selected from strontium, calcium, barium or magnesium, andx is between about 0 and 0.9999,Z is selected from the group consisting of F.sub.3-x and O.sub.c F.sub.d where F is fluorine, O is oxygen, x is between about 0 and 0.9999 and 2c+d=3-x,wherein c is between 0.0001 and 1.5 and d is between 0.0001 and less than or equal to 3, with the proviso when A is lanthanum, Z is F.sub.3-x and x is 0, the solid material is only a monocrystal.

Abstract: A low dislocation density semiconductor device includes a first semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The semiconductor compound usually has a large dislocation density. A predetermined position of the alloying atoms in the compound lattice structure can substantially reduce the compound dislocation density. Energy is applied to the alloying atoms so they are at the predetermined positions. The number of alloying atoms causes the semiconductor compound solubility limit to be exceeded. The layer is formed on a substrate of the III-V or II-VI semiconductor, such as gallium arsenide or another semiconductor, such as silicon or on an insulator such as sapphire. In the latter cases, the layer is formed on an intermediate layer having a lattice constant between that of the substrate and semiconductor compound.

Abstract: Gas species are detected with a capacitor having a solid, ionic dielectric excited by an AC voltage in the ramp from 0.01-30 Hz, with an amplitude of 1-100 millivolts to allow physisorption processes and/or with an AC voltage in the same frequency range and amplitudes from 0.01-3 volts to achieve chemisorption reactions. The AC impedance of the capacitor is detected for both physisorption and chemisorption excitation to determine gas species and concentration. In chemisorption, diode like action occurs, and is detected by AC harmonic detection processes. The surface of the dielectric on which the gas is incident is overlaid with a grid or porous electrode, fabricated of inert metal or a catalyst which causes the capacitor to enable preferential adsorption by the dielectric of certain materials, to indicate the presence of certain gases. Plural capacitors, having different absorption characteristics in response to different gases facilitates detection of plural gases.

Abstract: The present invention relates to solid materials for use as electrolyte for a fuel cell, or for a sensor, or as a catalyst. Representative structures include lanthanum fluoride, lead potassium fluoride, lead bismuth fluoride, lanthanum strontium fluoride, lanthan strontium lithium fluoride, calcium uranium, cesium fluoride, PbSnFy, KSn.sub.2 F.sub.4, SrCl.sub.2.KCl, LaOF.sub.2, PbSnF.sub.8.PbSnO, lanthanum oxyfluoride, oxide, calcium fluoride, SmNdFO, and the like. In another aspect, the present invention relates to a composite and a process to obtain it of the formula:A.sub.1-y ByQO.sub.3having a perovskite or a perovskite-type structure as an electrode catalyst in combination with:A.sub.y B.sub.1-y F.sub.

Abstract: Gas species are detected with a capacitor having a solid, ionic dielectric excited by an AC voltage in the range from 0.01-30 Hz, with an amplitude of 1-100 millivolts to allow physisorption processes and/or with an AC voltage in the same frequency range and amplitudes from 0.01-3 volts to achieve chemisorption reactions. The AC impedancae of the capacitor is detected for both physisorption and chemisorption excitation to determine gas species and concentration. In chemisorption, diode like action occurs, and is detected by AC harmonic detection processes. The surface of the dielectric on which the gas is incident is overlaid with a grid or porous electrode, fabricated of inert metal or a catalyst which causes the capacitor to enable preferential adsorption by the dielectric of certain materials, to indicate the presence of certain gases. Plural capacitors, having different adsorption characteristics in response to different gases facilitates detection of plural gases.

Abstract: A magnetic recording medium having a coating of magnetic particles deposited thereon by electrophoresis. Magnetic particles are encapsulated by dry milling in a thermoplastic binder which is insoluble at ambient or room temperatures and is softenable at temperatures higher than 70.degree. C. A charge director for producing functional sites in the higher is incorporated in the encapsulating polymer during the dry-milling step. The encapsulated mass is comminuted or pulverized and then wet-milled with a major amount of a low-boiling aliphatic hydrocarbon liquid. A suspension is then formed with additional hydrocarbon liquid. Additional charge director may be added, either during the wet-milling step or during the suspension-forming step. The suspension is then used as a bath from which the coating is deposited by electrophoresis. The magnetic particles are oriented by the application of a magnetic field, either during the depositing step or subsequent thereto.

Abstract: An integrated circuit bulk substrate having a zinc blende or Wurtzite crystalline structure is alloyed with a material having atoms that replace atoms of the host semiconductor. The alloyed atoms have a bond length with the nearest neighboring host atoms that is less than the bond length of the host atoms. The number of bonded alloyed atoms is small compared to the number of host atoms so as not to substantially affect electronic conduction properties of the host material, but is large enough to virtually eliminate dislocations over a large surface area and volume of the host material on which active semiconductor devices are located.

Abstract: A photocapacitive image detector array comprises a matrix of M.times.N spaced columns of relatively high carrier concentration extending between first and second opposite faces of a semiconductor substrate having a relatively low carrier concentration. N parallel spaced electrode stripes extend in the X direction on the first face and M parallel spaced semiconductor stripes of intermediate carrier concentration extend in the Y direction on the second face. Stripe k of the N stripes makes ohmic contacts with each of the M columns, where k=1,2, . . . N. Stripe p of the M semiconductor stripes makes contact with each of the N columns, where p=1, 2, . . . M. Each of the M regions has a depletion layer having a thickness adapted to be modulated by radiation from an image to be detected. M parallel spaced electrode stripes extend in the Y direction so that stripe q of electrode stripes M is in registration with semiconductor stripe q, where q=1, 2, . . . M.

Abstract: A magnetic recording medium having a coating of magnetic particles deposited thereon by electrophoresis. Magnetic particles are encapsulated by dry milling in a thermoplastic binder which is insoluble at ambient or room temperatures and is softenable at temperatures higher than 70.degree. C. A charge director for producing functional sites in the binder is incorporated in the encapsulating polymer during the dry-milling step. The encapsulated mass is comminuted or pulverized and then wet-milled with a major amount of a low-boiling aliphatic hydrocarbon liquid. A suspension is then formed with additional hydrocarbon liquid. Additional charge director may be added, either during the wet-milling step or during the suspension-forming step. The suspension is then used as a bath from which the coating is deposited by electrophoresis. The magnetic particles are oriented by the application of a magnetic field, either during the depositing step or subsequent thereto.

Abstract: A photovoltaic cell includes doped cadmium telluride formed of tetrahedral crystalline host semiconductor material including cadmium and telluride atoms bonded by ionic, covalent, and metallic forces. The host material is alloyed with Group II or VI atoms that replace either some of the host material cadmium or telluride atoms so that the alloyed and host atoms are bonded by at least covalent and metallic forces. The alloyed atoms have bond lengths with the nearest neighboring host atoms that are less than the host bond lengths. The number of bonded alloyed atoms is such that they do not substantially affect electronic conduction properties of the host material and result in a semiconductor region having no more than a few dislocations. A semiconductor of opposite conductivity to the conductivity type of the semiconductor region forms a junction with the region. At least one metal electrode makes ohmic contact with the first region.

Abstract: A solar cell in which the essential feature is a thin film of lead-cadmium-sulphide alloy. This alloy is preferably formed by spray pyrolysis from a solution containing the necessary ingredients. The solar cell advantageously takes the form of a homojunction constructed of two layers of lead-cadmium-sulphide alloy, with one of the layers being p-doped and the other of the layers being n-doped. The solar cell may be produced with an intrinsic layer interposed between the p-type layer and the n-type layer. The solar cell may also be made with a semiconductive layer of lead-cadmium-sulphide in contact with a metallic substrate.

Abstract: A multilayer photoconductive assembly with an intermediate heterojunction. The assembly comprises a conductive substrate, a thin semiconductive layer formed of a material of one carrier polarity, which material has a narrow band gap. This layer is in substantially ohmic (low-resistive) contact with the conductive substrate. A light-absorbing layer is formed of a semiconductor which is thicker than the first layer and is of a carrier polarity opposite to the polarity of the first layer. The material has a band gap wider than the band gap of the first layer. The first and second semiconductive layers form a rectifying heterojunction therebetween. This enables the assembly to have a tremendously increased dark resistance and produces an assembly enabling high-speed electrophotography.

Abstract: Apparatus for converting a radiant energy image into corresponding electrical signals including an image converter. The image converter includes a substrate 20 of semiconductor material, an insulating layer 23 on the front surface of the substrate and an electrical contact 22 on the back surface of the substrate. A first series of parallel transparent conductive stripes 25 is on the insulating layer with a processing circuit 33 connected to each of the conductive stripes for detecting the modulated voltages generated thereon. In a first embodiment of the invention (FIG. 5), a modulated light stripe 38 perpendicular to the conductive stripes 25 scans the image converter. The resulting modulated signals generated on the conductive stripes are detected by the processing circuits 40 to produce signals that represent the image focused on the image converter. In a second embodiment of the invention (FIG.

Abstract: A semiconductor layer of In.sub.1-x Tl.sub.x Q carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As.sub.1-y P.sub.y and 0<x<1, 0<y<1.