Abstract: A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.

Abstract: A composite optical waveguide is constructed using an array of waveguide cores, in which one core is tapered to a larger dimension, so that all the cores are used as a composite input port, and the one larger core is used as an output port. In addition, transverse couplers can be fabricated in a similar fashion. The waveguide cores are preferably made of SiN. In some cases, a layer of SiN which is provided as an etch stop is used as at least one of the waveguide cores. The waveguide cores can be spaced away from a semiconductor layer so as to minimize loses.

Abstract: Otherwise-unused metal pads are utilized for mechanically marking an identification number on each chip in each reticle of each semiconductor wafer. A chip-specific marking pattern is scribed into selected metal pads using a standard commercial wafer probe controlled by a custom-built controller to direct the probe or probe stage to implement the pattern. Visual inspection (manual and automated) may then be used for die identification based on the probe-marked pattern, including incorporating the visual inspection of these pads into the product building process.

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract: A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.

Abstract: A fiber alignment or “fiberposer” device enables the passive alignment of one or more optical fibers to a photonic integrated circuit (PIC) device using mating hard-stop features etched into the two devices. Accordingly, fiber grooves can be provide separate from the electrical and optical elements, and attached to the PIC with sub-micron accuracy. Fiberposers may also include a hermetic seal for a laser or other device on the PIC. All of these features significantly reduce the typical cost of an actively aligned optical device sealed in an hermetic package.

Abstract: A skew compensation apparatus and method. In an optical system that uses optical signals, skew may be generated as the optical signals are processed from an input optical signal to at least two electrical signals representative of the phase-differentiated optical signals. A compensation of the skew is provided by including an optical delay line in the path of the optical signal that does not suffer the skew (e.g., that serves as the time base for the skew measurement). The optical delay line introduces a delay Tskew equal to the delay suffered by the optical signal that is not taken as the time base. The two signals are thereby corrected for skew.

Abstract: Otherwise-unused metal pads are utilized for mechanically marking an identification number on each chip in each reticle of each semiconductor wafer. A chip-specific marking pattern is scribed into selected metal pads using a standard commercial wafer probe controlled by a custom-built controller to direct the probe or probe stage to implement the pattern. Visual inspection (manual and automated) may then be used for die identification based on the probe-marked pattern, including incorporating the visual inspection of these pads into the product building process.

Abstract: A test system for determining a surface characteristic of a chip facet comprises a chip, which has a facet and includes a waveguide, a detector, and a processor. The on-chip waveguide is configured to direct test light towards the facet, where a portion of the test light is reflected and a portion of the test light is transmitted. The detector is configured to measure an amount of the reflected portion or the transmitted portion, and the processor is configured to determine a surface characteristic of the facet, such as a facet angle, a facet curvature, and/or a facet roughness, on the basis of the measured amount.

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract: A fiber alignment or “fiberposer” device enables the passive alignment of one or more optical fibers to a photonic integrated circuit (PIC) device using mating hard-stop features etched into the two devices. Accordingly, fiber grooves can be provide separate from the electrical and optical elements, and attached to the PIC with sub-micron accuracy. Fiberposers may also include a hermetic seal for a laser or other device on the PIC. All of these features significantly reduce the typical cost of an actively aligned optical device sealed in an hermetic package.

Abstract: An optical waveguide modulator with automatic bias control is disclosed. A portion of the modulator light is mixed with reference light and converted to one or more electrical feedback signals. An electrical feedback circuit controls the modulator bias responsive to the feedback signals.

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract: A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the temperature of the germanium photodetector within a temperature range, or at a temperature of interest. An advantage provided by the apparatus described is the operation of the photodetector so that the responsivity of the germanium detector can be held at essentially a constant value.

Abstract: A composite optical waveguide is constructed using an array of waveguide cores, in which one core is tapered to a larger dimension, so that all the cores are used as a composite input port, and the one larger core is used as an output port. In addition, transverse couplers can be fabricated in a similar fashion. The waveguide cores are preferably made of SiN. In some cases, a layer of SiN which is provided as an etch stop is used as at least one of the waveguide cores. The waveguide cores can be spaced away from a semiconductor layer so as to minimize loses.

Abstract: A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the temperature of the germanium photodetector within a temperature range, or at a temperature of interest. An advantage provided by the apparatus described is the operation of the photodetector so that the responsivity of the germanium detector can be held at essentially a constant value.

Abstract: A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.

Abstract: A light shield may be formed in photonic integrated circuit between integrated optical devices of the photonic integrated circuit. The light shield may be built by using materials already present in the photonic integrated circuit, for example the light shield may include metal walls and doped semiconductor regions. Light-emitting or light-sensitive integrated optical devices or modules of a photonic integrated circuit may be constructed with light shields integrally built in.

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract: A circuit that allows the control of a parameter in each arm of a Mach-Zehnder interferometer or modulator in push-pull mode using a single control terminal and a ground (or a differential driving circuit). The parameter that is controlled can be a phase shift, a modulation or an attenuation. The magnitude and the frequency of the parameter can be adjusted.