Patents by Inventor Arie Jeffrey Den Boef

Arie Jeffrey Den Boef has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10845707
    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: November 24, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Publication number: 20200348125
    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
    Type: Application
    Filed: July 17, 2020
    Publication date: November 5, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
  • Patent number: 10816909
    Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
    Type: Grant
    Filed: October 3, 2018
    Date of Patent: October 27, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Patricius Aloysius Jacobus Tinnemans, Arie Jeffrey Den Boef, Armand Eugene Albert Koolen, Nitesh Pandey, Vasco Tomas Tenner, Willem Marie Julia Marcel Coene, Patrick Warnaar
  • Patent number: 10816906
    Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: October 27, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Nan Lin, Arie Jeffrey Den Boef, Sander Bas Roobol, Simon Gijsbert Josephus Mathijssen, Niels Geypen
  • Patent number: 10809632
    Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: October 20, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Ronald Joseph Antonius Van Den Oetelaar
  • Patent number: 10809628
    Abstract: Metrology targets are formed by a lithographic process, each target comprising a bottom grating and a top grating. Overlay performance of the lithographic process can be measured by illuminating each target with radiation and observing asymmetry in diffracted radiation. Parameters of metrology recipe and target design are selected so as to maximize accuracy of measurement of overlay, rather than reproducibility. The method includes calculating at least one of a relative amplitude and a relative phase between (i) a first radiation component representing radiation diffracted by the top grating and (ii) a second radiation component representing radiation diffracted by the bottom grating after traveling through the top grating and intervening layers. The top grating design may be modified to bring the relative amplitude close to unity. The wavelength of illuminating radiation in the metrology recipe can be adjusted to bring the relative phase close to ?/2 or 3?/2.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: October 20, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Publication number: 20200301290
    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
    Type: Application
    Filed: June 5, 2020
    Publication date: September 24, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Arie Jeffrey DEN BOEF, Kaustuve Bhattacharyya
  • Patent number: 10775704
    Abstract: A scatterometer performs diffraction based measurements of one or more parameters of a target structure. To make two-color measurements in parallel, the structure is illuminated simultaneously with first radiation (302) having a first wavelength and a first angular distribution and with second radiation (304) having a second wavelength and a second angular distribution. The collection path (CP) includes a segmented wavelength-selective filter (21, 310) arranged to transmit wanted higher order portions of the diffracted first radiation (302X, 302Y) and of the diffracted second radiation (304X, 304Y), while simultaneously blocking zero order portions (302?, 304?) of both the first radiation and second radiation.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: September 15, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Nitesh Pandey, Arie Jeffrey Den Boef, Marinus Johannes Maria Van Dam
  • Publication number: 20200249584
    Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.
    Type: Application
    Filed: April 23, 2020
    Publication date: August 6, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Robert John SOCHA, Arie Jeffrey DEN BOEF, Nitesh PANDEY
  • Patent number: 10718604
    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: July 21, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
  • Patent number: 10712678
    Abstract: An imprint lithography apparatus is disclosed that includes an imprint template holder arranged to hold an imprint template, and a plurality of position sensors configured to measure change of the size and/or shape of the imprint template, wherein the position sensors are mechanically isolated from the imprint template. Also disclosed is a lithography method that includes using an imprint template to imprint a pattern onto a substrate, and measuring changes of the size and/or shape of the imprint template while imprinting the pattern onto the substrate.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: July 14, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Yvonne Wendela Kruijt-Stegeman, Andre Bernardus Jeunink, Arie Jeffrey Den Boef, Vadim Yevgenyevich Banine, Michael Jozef Mathijs Renkens, Gerard Van Schothorst, Johan Frederik Dijksman, Carolus Johannes Catharina Schoormans, Adrianus Hendrik Koevoets, Catharinus De Schiffart, Sander Frederik Wuister
  • Publication number: 20200218166
    Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
    Type: Application
    Filed: January 3, 2020
    Publication date: July 9, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Kaustuve Bhattacharyya, Arie Jeffrey Den Boef, Martin Jacobus Johan Jak
  • Publication number: 20200217648
    Abstract: A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern, Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.
    Type: Application
    Filed: March 12, 2020
    Publication date: July 9, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Henricus Petrus Maria PELLEMANS, Arie Jeffrey DEN BOEF
  • Publication number: 20200218167
    Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.
    Type: Application
    Filed: March 23, 2020
    Publication date: July 9, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Arie Jeffrey DEN BOEF, Ronald Joseph Antonius VAN DEN OETELAAR
  • Publication number: 20200218849
    Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.
    Type: Application
    Filed: February 28, 2020
    Publication date: July 9, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Christophe David Fouquet, Bernardo Kastrup, Arie Jeffrey Den Boef, Johannes Catharinus Hubertus Mulkens, James Benedict Kavanagh, James Patrick Koonmen, Neal Patrick Callan
  • Patent number: 10698322
    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: June 30, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Publication number: 20200192229
    Abstract: A method and a computer program product that relates to lithographic apparatuses and, processes, and more particularly to a method and computer program to inspect substrates produced by the lithographic apparatuses and processes. The method and/or computer program product includes determining contributions from independent sources from results measured from a lithography process or a substrate processed by the lithography process, wherein the results are measured using a plurality of different substrate measurement recipes.
    Type: Application
    Filed: November 22, 2016
    Publication date: June 18, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Omer Abubaker Omer ADAM, Adrianus Cornelis Matheus KOOPMAN, Henricus JohannesLambertus MEGENS, Arie Jeffrey DEN BOEF
  • Publication number: 20200192231
    Abstract: The disclosure relates to measuring a parameter of a lithographic process and a metrology apparatus. In one arrangement, radiation from a radiation source is modified and used to illuminate a target formed on a substrate using the lithographic process. Radiation scattered from a target is detected and analyzing to determine the parameter. The modification of the radiation comprises modifying a wavelength spectrum of the radiation to have a local minimum between a global maximum and a local maximum, wherein the power spectral density of the radiation at the local minimum is less than 20% of the power spectral density of the radiation at the global maximum and the power spectral density of the radiation at the local maximum is at least 50% of the power spectral density of the radiation at the global maximum.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 18, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Hugo Augustinus Joseph CRAMER, Hiiko Dirk BOS, Erik Johan KOOP, Armand Eugene Albert KOOLEN, Han-Kwang NIENHUYS, Alessandro POLO, Jin LIAN, Arie Jeffrey DEN BOEF
  • Publication number: 20200183290
    Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (?1, ?2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
    Type: Application
    Filed: February 16, 2020
    Publication date: June 11, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Gonzalo Roberto SANGUINETTI, Murat BOZKURT, Maurits VAN DER SCHAAR, Arie Jeffrey DEN BOEF
  • Patent number: 10678139
    Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: June 9, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Joeri Lof, Hans Butler, Sjoerd Nicolaas Lambertus Donders, Aleksey Yurievich Kolesnychenko, Erik Roelof Loopstra, Hendricus Johannes Maria Meijer, Johannes Catherinus Hubertus Mulkens, Roelof Aeilko Siebrand Ritsema, Frank Van Schaik, Timotheus Franciscus Sengers, Klaus Simon, Joannes Theodoor De Smit, Alexander Straaijer, Bob Streefkerk, Erik Theodorus Maria Bijlaart, Christiaan Alexander Hoogendam, Helmar Van Santen, Marcus Adrianus Van De Kerkhof, Mark Kroon, Arie Jeffrey Den Boef, Joost Jeroen Ottens, Jeroen Johannes Sophia Maria Mertens