Abstract: A system and method is disclosed for root cause analysis and early warning of inventory problems. The system includes a server coupled with a database and configured to access the data describing inventory policy parameters of a supply chain network, the data describing one or more demand patterns and one or more replenishment patterns of the supply chain network, and the data describing the supply chain network comprising a plurality of entities, each entity configured to supply one or more items to satisfy a demand. The server is further configured to optimize the inventory policy parameters for each of the one or more items according to the one or more demand patterns and the one or more replenishment patterns and store the optimized inventory policy parameters in the database for each of the one or more items.

Abstract: An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.

Abstract: An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.

Abstract: Darkening of silicone containing materials caused by exposure to ultraviolet illumination is prevented or reversed by exposure of those materials to an atmosphere containing a reactive species, which may comprise activated oxygen. The activated oxygen may be generated by ultraviolet irradiation of the silicone material in an oxygen containing atmosphere. In other instances, the activated oxygen may comprise ozone or some other activated oxygen species. In yet other instances, the reactive species may comprise an oxygen containing material such as nitrous oxide or nitrates. It may also comprise other materials such as halogens, atomic hydrogen, protons or the like. The treatment may be applied prior to ultraviolet exposure so as to prevent or minimize darkening, or it may be applied after darkening has occurred for purposes of reversing the darkening.

Abstract: A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a support for a semiconductor device and an optical system which is operative to direct the laser illumination from the light source to the semiconductor device. The optical system includes optical elements which are compatible with the laser illumination of the first wavelength and the laser illumination of the second wavelength. In specific instances, the first wavelength is long wavelength illumination such as illumination of at least 1000 nanometers, and the second wavelength is short wavelength illumination which in specific instances is 300 nanometers or shorter. By the use of the differing wavelengths, specific layers of the semiconductor device may be scribed without damage to subjacent layers. Also disclosed are specific scribing processes.

Abstract: A light weight photovoltaic device for use in stratospheric and outer space applications. The device includes a protective surface coating on the light incident side thereof. The protective coating does not deleteriously affect the photovoltaic properties of the solar cell, is formed of a material which protects said solar cell from the harsh conditions in the stratospheric or outer space environment in which the photovoltaic device is adapted to be used; and remains substantially unchanged when exposed to the harsh conditions in the stratosphere or outer space. The protective coating is preferably made of a spray coated silicone based material and is between 0.01 and 2 mil thick.

Abstract: A photovoltaic roofing shingle includes a strip of roofing material having an overlap portion, and a plurality of tab portions depending therefrom. Each of the tab portions includes a photovoltaic generating device affixed thereto. The photovoltaic devices are electrically interconnected, and each photovoltaic shingle member includes a pair of electrical terminals for delivering power from said photovoltaic devices. In use, the shingle members are affixed to a roof so that the tab portions of one row of shingles cover the overlap portion of an adjoining row. Electrical interconnection may be made through the roof to the inside of the building, or to a point atop the roof.

Abstract: A back reflector for a photovoltaic device includes an electrically conductive, textured layer and a reflective layer conformally disposed on the textured layer. The reflector may include a protective layer atop the reflective layer. The materials of the reflector are selected to be non-reactive under conditions encountered in the manufacture and use of the photovoltaic device.

Abstract: An igniter for a plasma processing apparatus comprises a hollow, at least partially microwave transmissive, body having a gas inlet and gas outlet passing therethrough. The geometry of the inlet and outlet are selected so that the outlet provides a greater impedance to gas flow than does the inlet. In this manner, there is provided a high pressure region in the igniter in which plasma ignition is facilitated. Ionized species generated in the igniter function to initiate plasma formation externally of the igniter.

Abstract: A method for manufacturing thin film, photovoltaic devices of the type having an intrinsic semiconductor layer disposed between two oppositely charged doped, semiconductor layers. A buffer layer of intrinsic semiconductor material is RF deposited at the junction between a microwave deposited, base intrinsic layer and a layer of doped material. The cell produced by the method of the present invention has enhanced performance characteristics over cells having microwave deposited intrinsic layers with no barrier layers.

Abstract: The glow discharge deposition of thin film materials is most advantageously carried out at a pressure which is less than the pressure of the minimum point on the deposition system's Paschen curve and at a power which is in excess of the minimum power required to sustain a deposition plasma at the particular process pressure.

Abstract: A protective layer is disposed between a silver reflective electrode and a layer of transparent conductive oxide in a photovoltaic device so as to prevent oxidation of the silver. The protective layer may be continuous or discontinuous and may be fabricated from MgF.sub.2, Si.sub.x N.sub.y or T.sub.ix N.sub.y where x and y are positive numbers.

Abstract: Open circuit voltage of photovoltaic devices manufactured by a microwave deposition process is increased by disposing a bias wire in the microwave energized plasma and applying a positive voltage of approximately 100 volts to the wire during only a portion of the time in which the intrinsic semiconductor layer is being deposited.

Abstract: A method of depositing a layer of doped or undoped wide band gap oxide material by chemical spray pyrolysis, upon a continuously advancing, elongated web of substrate material in a continuous, roll-to-roll process.

Abstract: A method for the plasma coating of a layer of material atop a semiconductor body, said method and apparatus adapted to substantially prevent damage to the semiconductor body by energetic vaporized species developed during the coating process. The invention has particular utility in the high volume fabrication of thin film semiconductor devices and may be readily adapted to provide the transparent conductive electrode of photoresponsive devices in a continuous roll-to-roll deposition process.