Patents by Inventor Arito Ogawa

Arito Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200335328
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Application
    Filed: July 1, 2020
    Publication date: October 22, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Atsuro SEINO
  • Patent number: 10734218
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: August 4, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito Ogawa, Atsuro Seino
  • Publication number: 20200194269
    Abstract: There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.
    Type: Application
    Filed: February 25, 2020
    Publication date: June 18, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Atsuro SEINO
  • Patent number: 10410870
    Abstract: A technique capable of controlling in-plane uniformity of a film formed on a substrate includes a step of forming a film on a substrate by performing a predetermined number of cycles in which a step of supplying a metal-containing gas to the substrate and a step of supplying a reducing gas containing an element that becomes a solid by itself to the substrate are performed in a time-division manner. The reducing gas has a property of changing a deposition rate of the film from an increasing rate to a decreasing rate in accordance with the exposure amount of the reducing gas with respect to the substrate. In the step of supplying the reducing gas, the exposure amount of the reducing gas with respect to the substrate is adjusted in accordance with the property of the reducing gas.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: September 10, 2019
    Assignee: KOKUSA ELECTRIC CORPORATION
    Inventors: Atsuro Seino, Arito Ogawa
  • Patent number: 10388530
    Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes: (a) forming a titanium nitride layer on a substrate by supplying a first source containing titanium and a second source containing nitrogen to the substrate; (b) forming a titanium aluminum carbonitride layer on the substrate by supplying the first source, the second source and a third source containing aluminum and carbon to the substrate; (c) forming a laminated film on the substrate by performing (a) and (b); and (d) adjusting ratios of titanium, nitrogen, aluminum and carbon in the laminated film based on how many times (a) and (b) are performed.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: August 20, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito Ogawa, Kazuhiro Harada, Yukinao Kaga, Hideharu Itatani, Hiroshi Ashihara
  • Patent number: 10366894
    Abstract: A method for manufacturing a semiconductor device, including: forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing, supplying a first precursor gas containing the first metal element and not containing carbon to the substrate, supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate, and supplying a reaction gas containing carbon to the substrate.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: July 30, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yukinao Kaga, Arito Ogawa
  • Publication number: 20190157089
    Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes: (a) forming a titanium nitride layer on a substrate by supplying a first source containing titanium and a second source containing nitrogen to the substrate; (b) forming a titanium aluminum carbonitride layer on the substrate by supplying the first source, the second source and a third source containing aluminum and carbon to the substrate; (c) forming a laminated film on the substrate by performing (a) and (b); and (d) adjusting ratios of titanium, nitrogen, aluminum and carbon in the laminated film based on how many times (a) and (b) are performed.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 23, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Kazuhiro HARADA, Yukinao KAGA, Hideharu ITATANI, Hiroshi ASHIHARA
  • Publication number: 20190096663
    Abstract: A method for improving a film formation rate and forming a film having a high dry etching resistance is disclosed. The method includes forming a metal nitride layer containing the metal element and the nitrogen element by performing a predetermined number of times in a time division manner supplying a halogen-based source gas containing the metal element to the substrate and supplying a reaction gas containing the nitrogen element and reacting with the metal element to the substrate; and forming a metal carbonitride layer containing the metal element, the carbon element, and the nitrogen element by performing a predetermined number of times in a time division manner supplying an organic-based source gas containing the metal element and the carbon element to the substrate and supplying the reaction gas to the substrate.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 28, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Yukinao KAGA, Kazuhiro HARADA, Motomu DEGAI
  • Publication number: 20190019673
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Application
    Filed: September 18, 2018
    Publication date: January 17, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Atsuro SEINO
  • Patent number: 10121651
    Abstract: A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing a semiconductor device according to the technique includes: (a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall; and (b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: November 6, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Arito Ogawa, Shin Hiyama
  • Publication number: 20180247819
    Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers).
    Type: Application
    Filed: April 24, 2018
    Publication date: August 30, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Arito OGAWA, Kazuhiro HARADA, Yukinao KAGA, Hideharu ITATANI, Hiroshi ASHIHARA
  • Publication number: 20180211843
    Abstract: A technique capable of controlling in-plane uniformity of a film formed on a substrate includes a step of forming a film on a substrate by performing a predetermined number of cycles in which a step of supplying a metal-containing gas to the substrate and a step of supplying a reducing gas containing an element that becomes a solid by itself to the substrate are performed in a time-division manner. The reducing gas has a property of changing a deposition rate of the film from an increasing rate to a decreasing rate in accordance with the exposure amount of the reducing gas with respect to the substrate. In the step of supplying the reducing gas, the exposure amount of the reducing gas with respect to the substrate is adjusted in accordance with the property of the reducing gas.
    Type: Application
    Filed: March 19, 2018
    Publication date: July 26, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsuro SEINO, Arito OGAWA
  • Patent number: 10014226
    Abstract: A process of forming a first mask on a first region of a metal film formed on a surface of a substrate, a process of modulating a work function of a first exposed region of the metal film, using plasma of a first process gas, a process of removing the first mask, a process of forming a second mask on a second region of the metal film, and a process of modulating the work function of a second exposed region of the metal film, using plasma of a second process gas are executed.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: July 3, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventor: Arito Ogawa
  • Publication number: 20180182619
    Abstract: A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing a semiconductor device according to the technique includes: (a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall; and (b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space.
    Type: Application
    Filed: September 14, 2017
    Publication date: June 28, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Arito OGAWA, Shin HIYAMA
  • Patent number: 9972500
    Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: May 15, 2018
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yukinao Kaga, Arito Ogawa, Atsuro Seino, Atsuhiko Ashitani, Ryohei Maeno, Masanori Sakai
  • Patent number: 9970107
    Abstract: A technique for forming a metal film having a high work function while suppressing an increase in EOT is provided. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) performing a first cycle a first number of times to form a first metal layer containing a first metal element; and (b) performing a second cycle to form a second metal layer containing a second metal element directly on the first metal layer, wherein a binding energy of second metal element with oxygen is higher than that of the first metal element with oxygen, wherein a cycle including (a) and (b) is performed a second number of times to form a conductive film containing the first metal element and the second metal element on a substrate, the conductive film having: a work function higher than the first metal layer; and a binding energy with oxygen higher than that of the first metal element with oxygen.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: May 15, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Arito Ogawa, Atsuro Seino
  • Patent number: 9966268
    Abstract: Provided are a method of manufacturing a semiconductor device capable of forming a high-quality film having low roughness and resistivity and a substrate processing apparatus and program. The method includes (a) forming an amorphous metal film on a substrate while maintaining the substrate by performing steps (a-1) and (a-2) in a time-divisional manner wherein the step (a-1) includes supplying in the time-divisional manner a metal-containing gas and a first reducing gas to the substrate a predetermined number of times to form a first amorphous metal film on the substrate, and the step (a-2) includes simultaneously supplying the metal-containing gas and a second reducing gas to the substrate having the first amorphous metal film formed thereon to form a second amorphous metal film on the first amorphous metal film; and (b) heating the substrate having the amorphous metal film formed thereon to.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: May 8, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Arito Ogawa, Atsuro Seino
  • Publication number: 20180080122
    Abstract: A technique for forming a metal film having a high work function while suppressing an increase in EOT is provided. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) performing a first cycle a first number of times to form a first metal layer containing a first metal element; and (b) performing a second cycle to form a second metal layer containing a second metal element directly on the first metal layer, wherein a binding energy of second metal element with oxygen is higher than that of the first metal element with oxygen, wherein a cycle including (a) and (b) is performed a second number of times to form a conductive film containing the first metal element and the second metal element on a substrate, the conductive film having: a work function higher than the first metal layer; and a binding energy with oxygen higher than that of the first metal element with oxygen.
    Type: Application
    Filed: August 9, 2017
    Publication date: March 22, 2018
    Inventors: Arito OGAWA, Atsuro SEINO
  • Patent number: 9824883
    Abstract: A method of manufacturing a semiconductor device by processing a substrate by supplying a processing space with a gas dispersed in a buffer space disposed at an upstream side of the processing space is provided. The method includes (a) transferring the substrate into the processing space while exhausting a transfer space of the substrate by a first vacuum pump; (b) closing a first valve disposed at a downstream side of the first vacuum pump; (c) supplying the gas into the processing space via the buffer space; and (d) exhausting the buffer space through an exhaust pipe connected to a downstream side of the first valve.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: November 21, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hiroshi Ashihara, Arito Ogawa
  • Publication number: 20170309490
    Abstract: A method of manufacturing a semiconductor device includes: forming an amorphous metal film on a substrate by time-divisionally conducting a cycle a predetermined number of times, the cycle including: (a) simultaneously supplying a metal-containing gas and a first reducing gas to the substrate to form a first amorphous metal layer on the substrate, and (b) forming a second amorphous metal layer on the first amorphous metal layer by time-divisionally supplying, a predetermined number of times, the metal-containing gas and a second reducing gas to the substrate on which the first amorphous metal layer is formed; and forming a crystallized metal layer on the substrate by simultaneously supplying the metal-containing gas and the first reducing gas to the substrate on which the amorphous metal film is formed.
    Type: Application
    Filed: September 24, 2014
    Publication date: October 26, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventor: Arito OGAWA