Patents by Inventor Arito Ogawa

Arito Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250069898
    Abstract: A film having film continuity can be formed. There is provided a technique including: preparing a substrate having a film formed on a surface thereof; and slimming the film by pulse-supplying a halogen-containing gas to the film without supplying oxygen-containing gas to the film. Additionally, the slimming step is performed without supplying plasma.
    Type: Application
    Filed: November 14, 2024
    Publication date: February 27, 2025
    Applicant: Kokusai Electric Corporation
    Inventors: Arito OGAWA, Norikazu MIZUNO, Atsuhiko ASHITANI, Atsuro SEINO, Kota KOWA
  • Publication number: 20250043418
    Abstract: There is provided a technique that includes (a) supplying a first gas, which inhibits a second gas from adsorbing to a first adsorption site, to a substrate including a predetermined surface on which the first adsorption site exists; and (b) supplying the second gas to the substrate under a condition in which an amount of adsorption of the second gas on the predetermined surface becomes self-limiting, wherein (a) begins at the same time as (b) or before (b), and wherein the first gas has a larger amount of adsorption on the predetermined surface than the second gas.
    Type: Application
    Filed: June 18, 2024
    Publication date: February 6, 2025
    Applicant: Kokusai Electric Corporation
    Inventors: Kazuki NONOMURA, Arito Ogawa
  • Publication number: 20250022708
    Abstract: Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer containing silicon on a substrate by performing a first cycle once or more, wherein the first cycle includes: (a1) supplying a first element-containing gas containing a first element other than silicon to the substrate; (a2) supplying a first reducing gas to the substrate non-simultaneously with (a1); and (a3) supplying a first silicon-containing gas to the substrate; and (b) forming a second layer on the first layer by performing a second cycle once or more after (a), wherein the second cycle comprises: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate.
    Type: Application
    Filed: September 30, 2024
    Publication date: January 16, 2025
    Applicant: Kokusai Electric Corporation
    Inventors: Takuya JODA, Arito OGAWA, Norikazu MIZUNO, Shogo HAYASAKA, Koei KURIBAYASHI
  • Publication number: 20250011926
    Abstract: It is possible to improve characteristics of a film formed on a substrate. There is provided a technique that includes: (a) performing a first supply of a source gas containing a first element and a halogen element to a substrate; (b) performing a supply of a first reducing gas to the substrate; (c) performing a supply of a second reducing gas to the substrate; (d) performing a second supply of the source gas to the substrate, (e) executing (b) and (d) X times without performing a purge between (b) and (d); and (f) executing (e) and (c) Y times.
    Type: Application
    Filed: September 25, 2024
    Publication date: January 9, 2025
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventor: Arito OGAWA
  • Publication number: 20250011929
    Abstract: A substrate processing quality is improved when supplying different gases simultaneously. There is provided a technique that includes: a process vessel; a first supplier supplying a first gas into the process vessel; a gas pipe conveying a second and a third gas into the process vessel, the third gas having an element of the second gas but a molecular structure thereof differing from the second gas; a storage at the gas pipe to store the second gas and the third gas; a first valve at the gas pipe between the storage and the process vessel; a second and a third gas supplier supplying the second and the third gas into the storage, respectively; and a controller for storing the second and the third gas in the storage, supplying the first gas to a substrate and supplying the second and the third gas to the substrate from the storage.
    Type: Application
    Filed: September 13, 2024
    Publication date: January 9, 2025
    Applicant: Kokusai Electric Corporation
    Inventors: Arito OGAWA, Atsuro SEINO
  • Publication number: 20250011931
    Abstract: There is provided a technique that includes: a processing container including a first region in which a substrate is processed and a second region in which the substrate is not disposed; a first supplier that supplies a processing gas to the first region; a second supplier that supplies an adsorption inhibiting gas to the second region in the processing container, a first supply system capable of supplying the processing gas to the first supplier; a second supply system capable of supplying the adsorption inhibiting gas to the second supplier; and a controller capable of controlling the first supply system and the second supply system to perform: (a) supplying the adsorption inhibiting gas to the second region; and (b) supplying the processing gas to the first region after (a).
    Type: Application
    Filed: September 24, 2024
    Publication date: January 9, 2025
    Applicant: Kokusai Electric Corporation
    Inventors: Shun MATSUI, Takashi YOKOGAWA, Arito OGAWA
  • Publication number: 20250006493
    Abstract: There is provided a technique that includes: (a) supplying a non-reducing promoting agent that promotes adsorption of a modifying agent containing an organic ligand to the substrate; (b) supplying the modifying agent to the substrate; and (c) forming a film on the substrate after performing (a) and (b).
    Type: Application
    Filed: March 26, 2024
    Publication date: January 2, 2025
    Applicant: Kokusai Electric Corporation
    Inventor: Arito OGAWA
  • Patent number: 12170206
    Abstract: A film having film continuity can be formed. There is provided a technique including: preparing a substrate having a metal-containing film formed on a surface thereof; and slimming the metal-containing film by pulse-supplying a halogen-containing gas to the substrate.
    Type: Grant
    Filed: March 18, 2022
    Date of Patent: December 17, 2024
    Assignee: Kokusai Electric Corporation
    Inventors: Arito Ogawa, Norikazu Mizuno, Atsuhiko Ashitani, Atsuro Seino, Kota Kowa
  • Patent number: 12148614
    Abstract: Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle includes: (a1) supplying a first element-containing gas to the substrate in a process chamber; and (a2) supplying a first reducing gas to the substrate a plurality of times, and wherein (a1) and (a2) are sequentially performed; and (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle includes: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate, and wherein (b1) and (b2) are sequentially performed.
    Type: Grant
    Filed: September 17, 2021
    Date of Patent: November 19, 2024
    Assignee: Kokusai Electric Corporation
    Inventors: Takuya Joda, Arito Ogawa, Norikazu Mizuno, Shogo Hayasaka, Koei Kuribayashi
  • Patent number: 12148621
    Abstract: There is provided a technique that includes: (a) supplying a molybdenum-containing gas containing molybdenum and oxygen to a substrate in a process chamber; (b) supplying an additive gas containing hydrogen to the substrate; and (c) supplying a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas to the substrate, wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.
    Type: Grant
    Filed: March 31, 2023
    Date of Patent: November 19, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Koei Kuribayashi, Arito Ogawa, Atsuro Seino
  • Patent number: 12139792
    Abstract: There is provided a technique capable of improving a processing uniformity between substrates. According to one aspect thereof, a substrate processing apparatus includes: a process vessel having a process region; a first nozzle having first holes, through which a first gas is supplied to substrates, arranged over the entire process region; a second nozzle having second holes, through which a second gas reacting with the first gas is supplied to the substrates, arranged over the entire process region; a third nozzle having third holes, through which an adsorption inhibitory gas inhibiting an adsorption of the first gas is supplied to the substrates, arranged corresponding to a part of the process region; and a gas supply system for supplying the first gas, the second gas and the adsorption inhibitory gas to the substrates through the first nozzle, the second nozzle and the third nozzle, respectively.
    Type: Grant
    Filed: February 14, 2022
    Date of Patent: November 12, 2024
    Assignee: Kokusai Electric Corporation
    Inventor: Arito Ogawa
  • Publication number: 20240344194
    Abstract: There is provided a technique capable of forming a low resistance film. The technique includes sequentially repeating: a first step including a first process of supplying a reducing gas containing silicon and hydrogen and not containing halogen, in parallel with supply of a metal-containing gas, to a substrate in a process chamber; a second step including: a second process of stopping the supply of the metal-containing gas, and maintaining the supply of the reducing gas; and a third process of supplying an inert gas into the process chamber with the supply of the reducing gas stopped, and maintaining a pressure in the third process equal to a pressure in the second process or adjusting the pressure in the third process to a pressure different from the pressure in the second process; and a third step of supplying a nitrogen-containing gas to the substrate.
    Type: Application
    Filed: June 3, 2024
    Publication date: October 17, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Atsuhiko ASHITANI, Arito Ogawa, Kota Kowa
  • Publication number: 20240332024
    Abstract: A technique includes forming a film containing a first element and a second element different from the first element on the substrate by performing a process a predetermined number of times, the process including: (a) supplying a first gas containing the first element and a halogen element to the substrate; (b) supplying a second gas containing the second element to the substrate; (c) supplying a third gas containing a third element and having a reducing character to the substrate; and (d) supplying a fourth gas containing a fourth element and having a reducing character to the substrate, wherein (a) and (d) are performed consecutively, and (b) and (c) are performed consecutively.
    Type: Application
    Filed: March 8, 2024
    Publication date: October 3, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Yutaka MATSUNO, Atsuro Seino, Arito Ogawa
  • Patent number: 12084757
    Abstract: There are included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
    Type: Grant
    Filed: August 19, 2022
    Date of Patent: September 10, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito Ogawa, Atsuro Seino
  • Patent number: 12084760
    Abstract: There is provided a technique that includes: (a) loading a substrate into a process container; (b) processing the substrate by supplying a processing gas into the process container to form a film containing titanium and nitrogen on the substrate; (c) unloading the processed substrate from the process container; and (d) supplying a modifying gas containing at least one selected from the group of silicon, metal, and halogen into the process container after the processed substrate is unloaded from the process container.
    Type: Grant
    Filed: February 2, 2023
    Date of Patent: September 10, 2024
    Assignee: Kokusai Electric Corporation
    Inventors: Takuya Joda, Arito Ogawa, Atsuro Seino
  • Patent number: 12080555
    Abstract: Described herein is a technique capable of suppressing the generation of particles due to a film peeling in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber; (b) supplying into the process chamber with at least one among: a gas containing a group 14 element and hydrogen; and a gas containing oxygen; and (c) forming the metal-containing film on the substrate after (b).
    Type: Grant
    Filed: January 27, 2021
    Date of Patent: September 3, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventor: Arito Ogawa
  • Publication number: 20240267705
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Application
    Filed: February 29, 2024
    Publication date: August 8, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Arito OGAWA, Atsuro SEINO
  • Publication number: 20240247367
    Abstract: There is provided a technique that includes: (A) forming a first layer containing a Group element on a surface of a substrate by supplying a gas containing the Group 15 element to the substrate; and (B) forming a film containing molybdenum on the first layer by performing: (a) supplying a gas containing molybdenum to the substrate; and (b) supplying a reducing gas to the substrate, wherein (a) and (b) are performed a predetermined number of times in (B) in an atmosphere capable of suppressing a decomposition of the first layer.
    Type: Application
    Filed: March 6, 2024
    Publication date: July 25, 2024
    Applicant: Kodusai Electric Corporation
    Inventors: Koei KURIBAYASHI, Arito Ogawa
  • Publication number: 20240186146
    Abstract: There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.
    Type: Application
    Filed: February 12, 2024
    Publication date: June 6, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Arito OGAWA, Atsuro SEINO
  • Publication number: 20240178008
    Abstract: There is provided a technique that includes: (a) supplying a first process gas to a process vessel; (b) supplying a second process gas different from the first process gas to the process vessel; (c) supplying a third process gas different from each of the first process gas and the second process gas to the process vessel; (d) performing a first cycle X times, the first cycle including performing (a) and (b); (e) performing a second cycle Y times, the second cycle including performing (d) and (c); and (f) changing X in a next execution of the second cycle according to the number of previous executions of the second cycle in (e).
    Type: Application
    Filed: February 1, 2024
    Publication date: May 30, 2024
    Applicant: Kokusai Electric Corporation
    Inventor: Arito OGAWA