Patents by Inventor Arito Ogawa

Arito Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12148621
    Abstract: There is provided a technique that includes: (a) supplying a molybdenum-containing gas containing molybdenum and oxygen to a substrate in a process chamber; (b) supplying an additive gas containing hydrogen to the substrate; and (c) supplying a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas to the substrate, wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.
    Type: Grant
    Filed: March 31, 2023
    Date of Patent: November 19, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Koei Kuribayashi, Arito Ogawa, Atsuro Seino
  • Patent number: 12148614
    Abstract: Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle includes: (a1) supplying a first element-containing gas to the substrate in a process chamber; and (a2) supplying a first reducing gas to the substrate a plurality of times, and wherein (a1) and (a2) are sequentially performed; and (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle includes: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate, and wherein (b1) and (b2) are sequentially performed.
    Type: Grant
    Filed: September 17, 2021
    Date of Patent: November 19, 2024
    Assignee: Kokusai Electric Corporation
    Inventors: Takuya Joda, Arito Ogawa, Norikazu Mizuno, Shogo Hayasaka, Koei Kuribayashi
  • Patent number: 12139792
    Abstract: There is provided a technique capable of improving a processing uniformity between substrates. According to one aspect thereof, a substrate processing apparatus includes: a process vessel having a process region; a first nozzle having first holes, through which a first gas is supplied to substrates, arranged over the entire process region; a second nozzle having second holes, through which a second gas reacting with the first gas is supplied to the substrates, arranged over the entire process region; a third nozzle having third holes, through which an adsorption inhibitory gas inhibiting an adsorption of the first gas is supplied to the substrates, arranged corresponding to a part of the process region; and a gas supply system for supplying the first gas, the second gas and the adsorption inhibitory gas to the substrates through the first nozzle, the second nozzle and the third nozzle, respectively.
    Type: Grant
    Filed: February 14, 2022
    Date of Patent: November 12, 2024
    Assignee: Kokusai Electric Corporation
    Inventor: Arito Ogawa
  • Publication number: 20240344194
    Abstract: There is provided a technique capable of forming a low resistance film. The technique includes sequentially repeating: a first step including a first process of supplying a reducing gas containing silicon and hydrogen and not containing halogen, in parallel with supply of a metal-containing gas, to a substrate in a process chamber; a second step including: a second process of stopping the supply of the metal-containing gas, and maintaining the supply of the reducing gas; and a third process of supplying an inert gas into the process chamber with the supply of the reducing gas stopped, and maintaining a pressure in the third process equal to a pressure in the second process or adjusting the pressure in the third process to a pressure different from the pressure in the second process; and a third step of supplying a nitrogen-containing gas to the substrate.
    Type: Application
    Filed: June 3, 2024
    Publication date: October 17, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Atsuhiko ASHITANI, Arito Ogawa, Kota Kowa
  • Publication number: 20240332024
    Abstract: A technique includes forming a film containing a first element and a second element different from the first element on the substrate by performing a process a predetermined number of times, the process including: (a) supplying a first gas containing the first element and a halogen element to the substrate; (b) supplying a second gas containing the second element to the substrate; (c) supplying a third gas containing a third element and having a reducing character to the substrate; and (d) supplying a fourth gas containing a fourth element and having a reducing character to the substrate, wherein (a) and (d) are performed consecutively, and (b) and (c) are performed consecutively.
    Type: Application
    Filed: March 8, 2024
    Publication date: October 3, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Yutaka MATSUNO, Atsuro Seino, Arito Ogawa
  • Patent number: 12084760
    Abstract: There is provided a technique that includes: (a) loading a substrate into a process container; (b) processing the substrate by supplying a processing gas into the process container to form a film containing titanium and nitrogen on the substrate; (c) unloading the processed substrate from the process container; and (d) supplying a modifying gas containing at least one selected from the group of silicon, metal, and halogen into the process container after the processed substrate is unloaded from the process container.
    Type: Grant
    Filed: February 2, 2023
    Date of Patent: September 10, 2024
    Assignee: Kokusai Electric Corporation
    Inventors: Takuya Joda, Arito Ogawa, Atsuro Seino
  • Patent number: 12084757
    Abstract: There are included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
    Type: Grant
    Filed: August 19, 2022
    Date of Patent: September 10, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito Ogawa, Atsuro Seino
  • Patent number: 12080555
    Abstract: Described herein is a technique capable of suppressing the generation of particles due to a film peeling in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber; (b) supplying into the process chamber with at least one among: a gas containing a group 14 element and hydrogen; and a gas containing oxygen; and (c) forming the metal-containing film on the substrate after (b).
    Type: Grant
    Filed: January 27, 2021
    Date of Patent: September 3, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventor: Arito Ogawa
  • Publication number: 20240267705
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Application
    Filed: February 29, 2024
    Publication date: August 8, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Arito OGAWA, Atsuro SEINO
  • Publication number: 20240247367
    Abstract: There is provided a technique that includes: (A) forming a first layer containing a Group element on a surface of a substrate by supplying a gas containing the Group 15 element to the substrate; and (B) forming a film containing molybdenum on the first layer by performing: (a) supplying a gas containing molybdenum to the substrate; and (b) supplying a reducing gas to the substrate, wherein (a) and (b) are performed a predetermined number of times in (B) in an atmosphere capable of suppressing a decomposition of the first layer.
    Type: Application
    Filed: March 6, 2024
    Publication date: July 25, 2024
    Applicant: Kodusai Electric Corporation
    Inventors: Koei KURIBAYASHI, Arito Ogawa
  • Publication number: 20240186146
    Abstract: There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.
    Type: Application
    Filed: February 12, 2024
    Publication date: June 6, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Arito OGAWA, Atsuro SEINO
  • Publication number: 20240178008
    Abstract: There is provided a technique that includes: (a) supplying a first process gas to a process vessel; (b) supplying a second process gas different from the first process gas to the process vessel; (c) supplying a third process gas different from each of the first process gas and the second process gas to the process vessel; (d) performing a first cycle X times, the first cycle including performing (a) and (b); (e) performing a second cycle Y times, the second cycle including performing (d) and (c); and (f) changing X in a next execution of the second cycle according to the number of previous executions of the second cycle in (e).
    Type: Application
    Filed: February 1, 2024
    Publication date: May 30, 2024
    Applicant: Kokusai Electric Corporation
    Inventor: Arito OGAWA
  • Patent number: 11967500
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: April 23, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito Ogawa, Atsuro Seino
  • Patent number: 11915938
    Abstract: There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.
    Type: Grant
    Filed: December 21, 2022
    Date of Patent: February 27, 2024
    Assignee: Kokusai Electric Corporation
    Inventors: Arito Ogawa, Atsuro Seino
  • Patent number: 11908737
    Abstract: There is provided a technique that performs: (a) forming a first metal film by supplying a plurality of times a first metal-containing gas and a first reducing gas without being mixed with each other to a substrate having a concave portion in a surface of the substrate; and (b) forming a second metal film on the first metal film by supplying a plurality of times at least a second metal-containing gas and a second reducing gas different from the first reducing gas without being mixed with each other or by simultaneously supplying at least a second metal-containing gas and a second reducing gas different from the first reducing gas, to the substrate.
    Type: Grant
    Filed: June 16, 2022
    Date of Patent: February 20, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventor: Arito Ogawa
  • Publication number: 20240055259
    Abstract: Described herein is a technique capable of suppressing the generation of particles due to a film peeling in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber; (b) supplying into the process chamber with at least one among: a gas containing a group 14 element and hydrogen; and a gas containing oxygen; and (c) forming the metal-containing film on the substrate after (b).
    Type: Application
    Filed: October 24, 2023
    Publication date: February 15, 2024
    Applicant: Kokusai Electric Corporation
    Inventor: Arito OGAWA
  • Publication number: 20230335404
    Abstract: According to the present disclosure, there is provided a technique capable of improving film properties. According to one aspect of the technique of the present disclosure, there is provided a substrate processing method including: preparing a substrate comprising a first film containing a first metal element and a second film containing a Group 13 element or a Group 14 element and formed on the first film; and forming a third film containing a second metal element on the substrate while removing at least part of the second film by performing: supplying a gas containing the second metal element to the substrate; and supplying a first reactive gas to the substrate.
    Type: Application
    Filed: June 16, 2023
    Publication date: October 19, 2023
    Inventors: Arito OGAWA, Atsuro SEINO
  • Publication number: 20230295800
    Abstract: Included are: (a) supplying a first processing gas containing a first element and a halogen to a substrate; (b) supplying a second processing gas including an N—N bond and an N—H bond to the substrate; and (c) performing (a) and (b) X times, X being a natural number, in a state where the substrate is heated to a temperature of 250° C. or lower to form a first film containing the first element.
    Type: Application
    Filed: March 17, 2023
    Publication date: September 21, 2023
    Applicant: Kokusai Electric Corporation
    Inventors: Atsuro SEINO, Arito OGAWA
  • Publication number: 20230268181
    Abstract: According to one aspect of a technique of the present disclosure, there is provided a substrate processing method including: (a) supplying a metal-containing gas to a substrate; (b) supplying a first reducing gas to the substrate; and (c) supplying a second reducing gas different from the first reducing gas to the substrate, wherein a metal-containing film is formed on the substrate by performing (a), (b) and (c) at least once.
    Type: Application
    Filed: March 15, 2023
    Publication date: August 24, 2023
    Inventors: Arito OGAWA, Koei KURIBAYASHI
  • Publication number: 20230257873
    Abstract: There is provided a technique that includes: (a) loading a substrate into a process container; (b) processing the substrate by supplying a processing gas into the process container to form a film containing titanium and nitrogen on the substrate; (c) unloading the processed substrate from the process container; and (d) supplying a modifying gas containing at least one selected from the group of silicon, metal, and halogen into the process container after the processed substrate is unloaded from the process container.
    Type: Application
    Filed: February 2, 2023
    Publication date: August 17, 2023
    Applicant: Kokusai Electric Corporation
    Inventors: Takuya JODA, Arito OGAWA, Atsuro SEINO