Patents by Inventor Arnaud Tournier
Arnaud Tournier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923465Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.Type: GrantFiled: December 17, 2020Date of Patent: March 5, 2024Assignee: STMicroelectronics (Crolles 2) SASInventors: Arnaud Tournier, Boris Rodrigues Goncalves, Frederic Lalanne
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Publication number: 20220320359Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.Type: ApplicationFiled: June 23, 2022Publication date: October 6, 2022Applicant: STMicroelectronics (Crolles 2) SASInventors: Arnaud TOURNIER, Boris RODRIGUES GONCALVES, Francois ROY
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Patent number: 11417789Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.Type: GrantFiled: March 20, 2020Date of Patent: August 16, 2022Assignee: STMicroelectronics (Crolles 2) SASInventors: Arnaud Tournier, Boris Rodrigues Goncalves, Francois Roy
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Patent number: 11107938Abstract: A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.Type: GrantFiled: February 13, 2020Date of Patent: August 31, 2021Assignee: STMicroelectronics (Crolles 2) SASInventors: Boris Rodrigues Goncalves, Arnaud Tournier
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Publication number: 20210193849Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.Type: ApplicationFiled: December 17, 2020Publication date: June 24, 2021Inventors: Arnaud TOURNIER, Boris RODRIGUES GONCALVES, Frederic LALANNE, Pascal FONTENEAU
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Publication number: 20200313023Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.Type: ApplicationFiled: March 20, 2020Publication date: October 1, 2020Inventors: Arnaud TOURNIER, Boris RODRIGUES GONCALVES, Francois ROY
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Publication number: 20200266310Abstract: A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.Type: ApplicationFiled: February 13, 2020Publication date: August 20, 2020Applicant: STMicroelectronics (Crolles 2) SASInventors: Boris RODRIGUES GONCALVES, Arnaud TOURNIER
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Patent number: 9087872Abstract: A structure comprising at least one DTI-type insulating trench in a substrate, the trench being at the periphery of at least one active area of the substrate forming a pixel, the insulating trench including a cavity filled with a dielectric material, the internal walls of the cavity being covered with a layer made of a boron-doped material.Type: GrantFiled: January 30, 2014Date of Patent: July 21, 2015Assignee: STMicroelectronics (Crolles 2) SASInventors: Laurent Favennec, Arnaud Tournier, François Roy
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Patent number: 8828882Abstract: A trench is formed in a semiconductor substrate by depositing an etch mask on the substrate having an opening, etching of the trench through the opening, and doping the walls of the trench. The etching step includes a first phase having an etch power set to etch the substrate under the etch mask, and a second phase having an etch power set smaller than the power of the first phase. Further, the doping of the walls of the trench is applied through the opening of the etch mask.Type: GrantFiled: December 13, 2012Date of Patent: September 9, 2014Assignee: STMicroelectronics (Crolles 2) SASInventors: Arnaud Tournier, Françcois Leverd
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Patent number: 8796148Abstract: A method for producing a deep trench in a substrate includes a series of elementary etch cycles each etching a portion of the trench. Each elementary cycle includes deposition of a passivation layer on the sidewalls and the bottom of the trench portion etched during previous cycles; followed by pulsed plasma anisotropic ion etching of the trench portion etched during previous cycles, the etching; being implemented in an atmosphere comprising a passivating species; and including a first etch sequence followed by a second etch sequence of less power than the power of the first etch sequence. The first etch sequence etches the passivation layer deposited in the bottom of the portion so as to access the substrate and etches the free substrate at the bottom of the portion while leaving a passivation layer on sidewalls of the portion.Type: GrantFiled: August 30, 2012Date of Patent: August 5, 2014Assignee: STMicroelectronics (Crolles 2) SASInventors: François Leverd, Laurent Favennec, Arnaud Tournier
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Patent number: 8754456Abstract: An image sensor including at least one photodiode and at least one transistor formed in and on a silicon substrate, the assembly of the photodiode and of the transistor being surrounded with a heavily-doped insulating wall, wherein the silicon substrate has a crystal orientation (110).Type: GrantFiled: August 3, 2009Date of Patent: June 17, 2014Assignees: STMicroelectronics (Crolles 2) SAS, STMicrolectronics SAInventors: François Roy, Arnaud Tournier
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Publication number: 20140145251Abstract: A structure comprising at least one DTI-type insulating trench in a substrate, the trench being at the periphery of at least one active area of the substrate forming a pixel, the insulating trench including a cavity filled with a dielectric material, the internal walls of the cavity being covered with a layer made of a boron-doped material.Type: ApplicationFiled: January 30, 2014Publication date: May 29, 2014Applicant: STMICROELECTRONICS (CROLLES 2) SASInventors: Laurent Favennec, Arnaud Tournier, François Roy
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Publication number: 20130052829Abstract: A method for producing a deep trench in a substrate includes a series of elementary etch cycles each etching a portion of the trench. Each elementary cycle includes deposition of a passivation layer on the sidewalls and the bottom of the trench portion etched during previous cycles; followed by pulsed plasma anisotropic ion etching of the trench portion etched during previous cycles, the etching; being implemented in an atmosphere comprising a passivating species; and including a first etch sequence followed by a second etch sequence of less power than the power of the first etch sequence. The first etch sequence etches the passivation layer deposited in the bottom of the portion so as to access the substrate and etches the free substrate at the bottom of the portion while leaving a passivation layer on sidewalls of the portion.Type: ApplicationFiled: August 30, 2012Publication date: February 28, 2013Applicant: STMicroelectronics (Crolles 2) SASInventors: Francois Leverd, Laurent Favennec, Arnaud Tournier
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Publication number: 20130026546Abstract: An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench including an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the active area and the encapsulation layer including nitrogen or carbon.Type: ApplicationFiled: July 27, 2012Publication date: January 31, 2013Applicant: STMicroelectronics (Crolles 2) SASInventors: Laurent Favennec, Arnaud Tournier, François Roy
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Patent number: 7875915Abstract: An integrated circuit includes at least one photodiode associated with a read transistor. The photodiode is formed from a stack of three semiconductor layers comprising a buried layer, an floating substrate layer and an upper layer. The drain region and/or the source region of the transistor are incorporated within the upper layer. The buried layer is electrically isolated from the upper layer so as to allow the buried layer to be biased independently of the upper layer.Type: GrantFiled: May 10, 2006Date of Patent: January 25, 2011Assignee: STMicroelectronics S.A.Inventors: François Roy, Arnaud Tournier
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Patent number: 7777168Abstract: A pixel is formed in a semiconductor substrate of a first doping type, a first layer of the second doping type covering the substrate, a second layer of the first doping type covering the first layer. A MOS-type transistor is formed in the second layer and has a drain area and a source area of the second doping type. The pixel includes a first area of the second doping type, more heavily doped than the first layer, crossing the second layer and extending into the first layer and connected to the drain area. The pixel further includes a second area of the first doping type, more heavily doped than the second layer and bordering the source area.Type: GrantFiled: December 28, 2007Date of Patent: August 17, 2010Assignee: STMicroelectronics, SAInventors: Arnaud Tournier, Francois Roy
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Patent number: 7777289Abstract: An integrated circuit includes at least one photodiode of the floating substrate type which is associated with a read transistor. The photodiode is formed from a buried layer lying beneath the floating substrate and an upper layer lying on the floating substrate. The upper layer incorporates the source and drain regions of the read transistor. The source and drain regions are produced on either side of the gate of the read transistor. An isolating trench is located alongside the source region and extends from the upper surface of the upper layer down to below the buried layer, so as to isolate the source region from said buried layer.Type: GrantFiled: May 10, 2006Date of Patent: August 17, 2010Assignee: STMicroelectronics S.A.Inventors: François Roy, Arnaud Tournier
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Publication number: 20100032734Abstract: An image sensor including at least one photodiode and at least one transistor formed in and on a silicon substrate, the assembly of the photodiode and of the transistor being surrounded with a heavily-doped insulating wall, wherein the silicon substrate has a crystal orientation (110).Type: ApplicationFiled: August 3, 2009Publication date: February 11, 2010Applicants: STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS S.A.Inventors: François ROY, ARNAUD TOURNIER
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Patent number: 7642579Abstract: A pixel having a MOS-type transistor formed in and above a semiconductor substrate of a first doping type, a buried semiconductor layer of a second doping type being placed in the substrate under the MOS transistor and separated therefrom by a substrate portion forming a well. The buried semiconductor layer comprises a thin portion forming a pinch area placed under the transistor channel area and a thick portion placed under all or part of the source/drain areas of the transistor.Type: GrantFiled: March 5, 2007Date of Patent: January 5, 2010Assignee: STMicroelectronics S.A.Inventors: Arnaud Tournier, François Roy
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Publication number: 20080179494Abstract: A pixel is formed in a semiconductor substrate of a first doping type, a first layer of the second doping type covering the substrate, a second layer of the first doping type covering the first layer. A MOS-type transistor is formed in the second layer and has a drain area and a source area of the second doping type. The pixel includes a first area of the second doping type, more heavily doped than the first layer, crossing the second layer and extending into the first layer and connected to the drain area. The pixel further includes a second area of the first doping type, more heavily doped than the second layer and bordering the source area.Type: ApplicationFiled: December 28, 2007Publication date: July 31, 2008Applicant: STMicroelectronics SAInventors: Arnaud Tournier, Francois Roy