Abstract: A method for reducing impurities in magnesium comprises: combining a zirconium-containing material with a molten low-impurity magnesium including no more than 1.0 weight percent of total impurities in a vessel to provide a mixture; holding the mixture in a molten state for a period of time sufficient to allow at least a portion of the zirconium-containing material to react with at least a portion of the impurities and form intermetallic compounds; and separating at least a portion of the molten magnesium in the mixture from at least a portion of the intermetallic compounds to provide a purified magnesium, wherein the purified magnesium includes an increased level of zirconium compared to the low-impurity magnesium, wherein the purified magnesium includes greater than 1000 ppm zirconium, and wherein the purified magnesium includes a reduced level of impurities other than zirconium compared to the low-impurity magnesium.

Abstract: A method for reducing impurities in magnesium comprises: combining a zirconium-containing material with a molten low-impurity magnesium including no more than 1.0 weight percent of total impurities in a vessel to provide a mixture; holding the mixture in a molten state for a period of time sufficient to allow at least a portion of the zirconium-containing material to react with at least a portion of the impurities and form intermetallic compounds; and separating at least a portion of the molten magnesium in the mixture from at least a portion of the intermetallic compounds to provide a purified magnesium, wherein the purified magnesium includes an increased level of zirconium compared to the low-impurity magnesium, wherein the purified magnesium includes greater than 1000 ppm zirconium, and wherein the purified magnesium includes a reduced level of impurities other than zirconium compared to the low-impurity magnesium.

Abstract: Processes for the production of tantalum alloys and niobium are disclosed. The processes use aluminothermic reactions to reduce tantalum pentoxide to tantalum metal or niobium pentoxide to niobium metal.

Abstract: Processes for the production of tantalum alloys and niobium are disclosed. The processes use aluminothermic reactions to reduce tantalum pentoxide to tantalum metal or niobium pentoxide to niobium metal.

Abstract: Processes for the production of tantalum alloys are disclosed. The processes use aluminothermic reactions to reduce tantalum pentoxide to tantalum metal.

Abstract: A method for reducing impurities in magnesium comprises: combining a zirconium-containing material with a molten low-impurity magnesium including no more than 1.0 weight percent of total impurities in a vessel to provide a mixture; holding the mixture in a molten state for a period of time sufficient to allow at least a portion of the zirconium-containing material to react with at least a portion of the impurities and form intermetallic compounds; and separating at least a portion of the molten magnesium in the mixture from at least a portion of the intermetallic compounds to provide a purified magnesium, wherein the purified magnesium includes an increased level of zirconium compared to the low-impurity magnesium, wherein the purified magnesium includes greater than 1000 ppm zirconium, and wherein the purified magnesium includes a reduced level of impurities other than zirconium compared to the low-impurity magnesium.

Abstract: A method for reducing impurities in magnesium comprises: combining a zirconium-containing material with a molten low-impurity magnesium including no more than 1.0 weight percent of total impurities in a vessel to provide a mixture; holding the mixture in a molten state for a period of time sufficient to allow at least a portion of the zirconium-containing material to react with at least a portion of the impurities and form intermetallic compounds; and separating at least a portion of the molten magnesium in the mixture from at least a portion of the intermetallic compounds to provide a purified magnesium, wherein the purified magnesium includes an increased level of zirconium compared to the low-impurity magnesium, wherein the purified magnesium includes greater than 1000 ppm zirconium, and wherein the purified magnesium includes a reduced level of impurities other than zirconium compared to the low-impurity magnesium.

Abstract: A method for reducing impurities in magnesium comprises: combining a zirconium-containing material with a molten low-impurity magnesium including no more than 1.0 weight percent of total impurities in a vessel to provide a mixture; holding the mixture in a molten state for a period of time sufficient to allow at least a portion of the zirconium-containing material to react with at least a portion of the impurities and form intermetallic compounds; and separating at least a portion of the molten magnesium in the mixture from at least a portion of the intermetallic compounds to provide a purified magnesium including greater than 1000 ppm zirconium. A purified magnesium including at least 1000 ppm zirconium and methods for producing zirconium metal using magnesium reductant also are disclosed.

Abstract: A method for reducing impurities in magnesium comprises: combining a zirconium-containing material with a molten low-impurity magnesium including no more than 1.0 weight percent of total impurities in a vessel to provide a mixture; holding the mixture in a molten state for a period of time sufficient to allow at least a portion of the zirconium-containing material to react with at least a portion of the impurities and form intermetallic compounds; and separating at least a portion of the molten magnesium in the mixture from at least a portion of the intermetallic compounds to provide a purified magnesium including greater than 1000 ppm zirconium. A purified magnesium including at least 1000 ppm zirconium and methods for producing zirconium metal using magnesium reductant also are disclosed.

Abstract: Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.

Abstract: An apparatus capable of producing a moveable magnetic field includes a moveable support structure (110) and a magnetic field source (120) supported by the moveable support structure, where the magnetic field source is in a fixed position relative to the moveable support structure. The magnetic field source generates a magnetic field at a wafer surface of at least approximately 50 Oersted, and the magnetic field is aligned so as to produce magnetic anisotropy in a plane of the moveable support structure.

Abstract: Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.

Abstract: A method of forming an integrated silicon voltage regulator (ISVR) comprises providing a nano-encapsulated magnetic particle (NEMP) suspension, depositing a first layer of the NEMP suspension on an integrated circuit (IC) device, curing the first layer of the NEMP suspension to form a first NEMP composite layer, forming at least one inductor wire on the NEMP composite layer, depositing an interlayer dielectric material over the inductor wire, depositing a second layer of the NEMP suspension on the interlayer dielectric material, and curing the second layer of the NEMP suspension to form a second NEMP composite layer.

Abstract: A transistor comprises a gate (110) comprising a gate electrode (111) and a gate dielectric (112), an electrically insulating cap (120, 720) over the gate, and a source/drain contact (130) adjacent to the gate. The electrically insulating cap prevents electrical contact between the gate and the source/drain contact. In one embodiment, the electrically insulating cap is formed in a trench (160, 660) that is self-aligned to the gate and that is created by the removal of a sacrificial cap using an aqueous solution comprising a carboxylic acid and a corrosion inhibitor.

Abstract: A transistor comprises a gate (110) comprising a gate electrode (111) and a gate dielectric (112), an electrically insulating cap (120, 720) over the gate, and a source/drain contact (130) adjacent to the gate. The electrically insulating cap prevents electrical contact between the gate and the source/drain contact. In one embodiment, the electrically insulating cap is formed in a trench (160, 660) that is self-aligned to the gate and that is created by the removal of a sacrificial cap using an aqueous solution comprising a carboxylic acid and a corrosion inhibitor.

Abstract: A technique includes forming overlaying magnetic metal layers over a semiconductor substrate. The technique includes forming at least one resistance layer between the magnetic metal layers.

Abstract: Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.

Abstract: A magnetic insulator nanolaminate device comprises a metal magnetic layer formed on a substrate, an insulating layer formed on the metal magnetic layer, wherein the insulating layer is formed by nitriding a portion of the metal magnetic layer, a chelating group layer formed on the insulating layer, and a metal seed layer bonded to the chelating group layer. The magnetic insulator nanolaminate device may be formed by depositing a metal layer on a substrate, converting a portion of the metal layer into an insulating layer using a nitridation process, and depositing a metal seed layer onto the insulating layer using a metal immobilization process, wherein the metal seed layer enables the deposition of a metal layer onto the insulating layer.

Abstract: Embodiments of the invention include apparatuses and methods relating to air gap interconnect structures having interconnects protected by a sealant. In various embodiments, the sealant includes alumina or silicon nitride. In some embodiments, the interconnect structures include cobalt alloy liners and cobalt shunts to encase a conductive material.

Abstract: A cobalt-iron-boron (CoFeB) film (100) is electrolessly deposited on a substrate (150) using a chloride plating bath. The plating bath may include a primary metal in a concentration of between approximately 0.05 moles per liter and approximately 0.4 moles per liter, a secondary metal in a concentration of between approximately 0.005 moles per liter and approximately 0.04 moles per liter, a complexing agent in a concentration of between approximately 0.15 and approximately 0.8 moles per liter, a pH buffer in a concentration of between approximately 0.5 and approximately 1.5 moles per liter, and a reducing agent in a concentration of between approximately 0.05 and approximately 0.25 moles per liter.