Abstract: An apparatus capable of producing a moveable magnetic field includes a moveable support structure (110) and a magnetic field source (120) supported by the moveable support structure, where the magnetic field source is in a fixed position relative to the moveable support structure. The magnetic field source generates a magnetic field at a wafer surface of at least approximately 50 Oersted, and the magnetic field is aligned so as to produce magnetic anisotropy in a plane of the moveable support structure.

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include heating a substrate comprising a patterned metallic region to about 145 C or below in a reaction space, introducing an aluminum co-reactant into the reaction space, wherein an aluminum material is formed on the patterned metallic region, but not on non-metallic regions.

Abstract: A hybrid electro-deposition process for soft magnetic cobalt alloy films comprises providing a plating bath that includes cobalt and a reducing agent, providing a cobalt-containing anode in the plating bath coupled to a power supply, providing a substrate in the plating bath coupled to the power supply, wherein the substrate functions as a cathode, applying a magnetic field across the plating bath, and applying an electrical current to the plating bath by way of the power supply to cause the cobalt to deposit onto the substrate and form a soft magnetic film.

Abstract: On-die inductively coupled wires and a method of making on-die inductively coupled wires are described. The on-die inductively coupled wires include a first wire to carry a first current, a surface area bounded by a second wire, and, an amorphous soft magnetic layer to couple magnetic flux induced by the first current through the surface area.

Abstract: On-die inductively coupled wires and a method of making on-die inductively coupled wires are described. The on-die inductively coupled wires include a first wire to carry a first current, a surface area bounded by a second wire, and, a layer to couple magnetic flux induced by said the first current through the surface area. The layer comprises regions of dielectric material and regions of soft magnetic material.

Abstract: A transistor comprises a gate (110) comprising a gate electrode (111) and a gate dielectric (112), an electrically insulating cap (120, 720) over the gate, and a source/drain contact (130) adjacent to the gate. The electrically insulating cap prevents electrical contact between the gate and the source/drain contact. In one embodiment, the electrically insulating cap is formed in a trench (160, 660) that is self-aligned to the gate and that is created by the removal of a sacrificial cap using an aqueous solution comprising a carboxylic acid and a corrosion inhibitor.

Abstract: An embodiment of the present invention is a technique to fabricate a device having a magnetic material. A nano-particle colloid is formed in a plating bath of an aqueous solution. The nano-particle colloid has magnetic nano-particles made of magnetic ferrite material. A seed layer is deposited on a substrate. A composite film containing the magnetic nano-particles is deposited on the seed layer using the plating bath.

Abstract: A technique includes forming overlaying magnetic metal layers over a semiconductor substrate. The technique includes forming at least one resistance layer between the magnetic metal layers.

Abstract: A material capable of being applied as a film or coating on a substrate and of supplying suitable magnetic and electrical properties for magnetic applications includes cobalt, boron, and at least one of tungsten and phosphorus. The material has a resistivity between approximately 20 and 1000 ?Ohm-cm, a saturation magnetic flux density of between approximately 0.1 and 1.8 Tesla, a coercivity less than approximately 5 Oersted, and a relative permeability of between approximately 100 and 2000.

Abstract: Embodiments of the invention include apparatuses and methods relating to air gap interconnect structures having interconnects protected by a sealant. In various embodiments, the sealant includes alumina or silicon nitride. In some embodiments, the interconnect structures include cobalt alloy liners and cobalt shunts to encase a conductive material.