Abstract: The present invention is directed to the etching of a material selected from the group consisting of silicon dioxide, silicon nitride, boronphosphorus silicate glass, fluorosilicate glass, siliconoxynitride, tungsten, tungsten silicide and mixtures thereof under plasma etch conditions, particularly for cleaning operations to remove silicon dioxide or silicon nitride from the walls and other surfaces within a reaction chamber of a plasma-enhanced chemical vapor deposition reactor. The etching chemicals used in the etch process are trifluoroacetic acid and it derivatives, such as; trifluoroacetic anhydride, trifluoromethyl ester of trifluoroacetic acid and trifluoroacetic acid amide and mixtures thereof.

Abstract: The present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR1## wherein at least one of R.sup.1 -R.sup.6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl, aryl or benzylic groups, or C.sub.x H.sub.2x when one or more of R.sup.1, R.sup.2 or R.sup.3 is connected to R.sup.4, R.sup.5 or R.sup.6 through a bridging group C.sub.y H.sub.2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6 and R.sup.7 is independently H, F, C.sub.z H.sub.2z+1 where z is 1-6 or C.sub.r H.sub.s F.sub.t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1) . The present invention is also the film formed by that process and several novel source materials used in the process.

Abstract: A method of depositing tungsten films comprising heating a substrate to a temperature above 200.degree. C. in a chemical vapor deposition reactor, flowing a stream of carrier gas over the substrate in the reactor, and simultaneously introducing mixtures of WF.sub.6 and organohydrosilanes into the reactor.

Abstract: Chemical Vapor Deposition of copper films is enhanced by simultaneously introducing in the reactor vapor of an organometallic copper precursor and copper complex vapor of a volatile ligand or the hydrate of the ligand.

Abstract: A process for thermal oxidation of silicon or cleaning of furnace tubes used in semiconductor manufacturing by exposing the silicon or tube to temperatures above 700.degree. C. while flowing a carrier gas containing oxygen and a chlorohydrocarbon having a general formula C.sub.x H.sub.x Cl.sub.x where x is 2, 3, or 4 over the silicon or tube. The chlorohydrocarbon is selected to readily and completely oxidize at temperature.

Abstract: A process for thermal oxidation of silicon or cleaning of furnace tubes used in semiconductor manufacturing by exposing the silicon or tube to temperatures above 700.degree. C. while flowing a carrier gas containing oxygen and a chlorohydrocarbon having a general formula C.sub.x H.sub.x Cl.sub.x where x is 2, 3, or 4 over the silicon or tube. The chlorohydrocarbon is selected to readily and completely oxidize at temperature.

Abstract: Process for depositing films of silicon dioxide by a low pressure CVD method, utilizing 1,4 disilabutane as the silicon precursor and molecular oxygen as the oxygen source. The deposition process permits films to be put down on a substrate at temperatures as low as 100.degree. C. with essentially no carbon in the film. The 1,4 disilabutane can be used as a substitute for silane, a toxic, pyrophoric compressed gas.

Abstract: A low temperature chemical vapor deposition process comprising heating in a chemical vapor depositon reactor a substrate upon which deposition is desired to a temperature of from about 550.degree. C. to about 750.degree. C. in a chemical vapor deposition reactor having a pressure of from about 0.1 torr to approximately atmospheric pressure, introducing into the reactor a silicon-containing feed and optionally an oxygen containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR1## wherein: R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are hydrogen, azido or C-2 to C-6 alkyl, aryl or C-7 to C-10 aralkyl groups, at least one but not more than three of R.sub.1, R.sub.2, R.sub.3 and R.sub.4, being azido, and maintaining the temperature and pressure to cause a film of silicon nitride, silicon oxynitride or silicon dioxide to deposit is disclosed.

Abstract: A method of producing a silicon nitride film on the surface of a substrate by thermal decomposition at said surface of a compound of the class ##STR1## wherein R.sub.1 R.sub.2 and R.sub.3 are hydrogen azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, at least one of R.sub.1, R.sub.2, and R.sub.3 being 1-6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, ethyltriazidosilane being uniquely superior, is disclosed.

Abstract: A low temperature chemical vapor deposition process comprising heating a substrate upon which deposition is desired to a temperature of from about 350.degree. C. to about 700.degree. C. in a chemical vapor deposition reactor at a pressure of from about 0.1 torr to atmospheric pressure, introducing into the reactor a silicon-containing feed and an oxygen containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR1## wherein: R.sub.1, R.sub.2, and R.sub.3 are hydrogen, azido or 1-6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl groups, at least one of R.sub.1 and R.sub.2 being 1-6 carbon alkyl, phenyl or 7-10 carbon alkaryl and maintaining the temperature and pressure in said ranges to cause a film of silicon dioxide or silicon oxynitride to deposit on said substrate is disclosed.

Abstract: A chemical vapor deposition process for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of from about 325.degree. C. to about 700.degree. C. in a vacuum having a pressure of from about 0.1 to about 1.5 torr, and introducing a silane selected from the group consisting of alkylsilane, arylsilane and araylkylsilane wherein the alkyl-, aryl- or aralkyl- moiety comprises from 2-6 carbons, and oxygen or carbon dioxide into the vacuum.

Abstract: A structure for a low-pressure chemical vapor deposition system which achieves greater uniformity of deposition. The structure includes injection means designed to provide more uniform distribution of the reactant gases injected into the system, as well as means to control the gas flow across the surfaces of the respective wafers and then the exhaust of those gases from the system. To this end, plenums which run the length of the deposition chamber beneath or to the side of the wafers are provided with openings arranged in a non-uniform manner to achieve this uniform injection. Furthermore, the wafer support or boat is provided with means to disperse concentrations of the reactant gases so as to provide more uniformity of the gas flow across the surfaces of the wafers.

Abstract: The invention is a method of fabricating dielectrically isolated semiconductor regions adapted for the construction of an integrated circuit on an epitaxial wafer wherein the epitaxial wafer has a first layer of monocrystalline n+ type silicon of a predetermined thickness and a second layer of epitaxially deposited n-type silicon which is substantially thinner than the first layer. A layer of silicon dioxide is grown on the back side of the first layer of the wafer and a layer of polycrystalline silicon is deposited onto the silicon dioxide layer. An aluminum oxide mask is formed defining a plurality of grooves around active semiconductor regions within the n-type silicon layer. The grooves are formed by a sputter etching process. Silicon dioxide is thermally grown within each of the grooves exposed by the sputter etching process to dielectrically isolate the active semiconductor regions after which semiconductor devices may be formed in each of the active semiconductor regions.

Abstract: Chemical Vapor Deposition of copper films is enhanced by simultaneously introducing in the reactor vapor of an organometalic copper precursor and .?.copper complex.!. vapor of a volatile ligand or the hydrate of the ligand.