Patents by Inventor Arthur M. Howald
Arthur M. Howald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7480571Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.Type: GrantFiled: October 15, 2004Date of Patent: January 20, 2009Assignee: Lam Research CorporationInventors: Arthur M. Howald, Andras Kuthi, Andrew D. Bailey, III
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Publication number: 20080280456Abstract: Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.Type: ApplicationFiled: May 8, 2007Publication date: November 13, 2008Inventors: Zhonghui Alex Wang, Tiruchirapalli Arunagiri, Fritz C. Redeker, Yezdi Dordi, John Boyd, Mikhail Korolik, Arthur M. Howald, William Thie, Praveen Nalla
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Publication number: 20070292615Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided.Type: ApplicationFiled: August 30, 2006Publication date: December 20, 2007Applicant: Lam Research CorporationInventors: Yezdi Dordi, John Boyd, Tiruchirapalli Arunagiri, Johan Vertommen, Fritz C. Redeker, William Thie, Arthur M. Howald
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Publication number: 20070292603Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically barrier-to-copper interface. An exemplary method of preparing a substrate surface of a substrate to deposit a metallic barrier layer to line a copper interconnect structure of the substrate and to deposit a thin copper seed layer on a surface of the metallic barrier layer in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes cleaning an exposed surface of a underlying metal to remove surface metal oxide in the integrated system, wherein the underlying metal is part of a underlying interconnect electrically connected to the copper interconnect.Type: ApplicationFiled: August 30, 2006Publication date: December 20, 2007Applicant: Lam Research CorporationInventors: Yezdi Dordi, John Boyd, Tiruchirapalli Arunagiri, Hyungsuk Alexander Yoon, Fritz C. Redeker, William Thie, Arthur M. Howald
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Publication number: 20070292604Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically copper-to-cobalt-alloy interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of a copper interconnect of the substrate in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system.Type: ApplicationFiled: August 30, 2006Publication date: December 20, 2007Applicant: Lam Research CorporationInventors: Yezdi Dordi, John Boyd, Tiruchirapalli Arunagiri, Fritz C. Redeker, William Thie, Arthur M. Howald
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Patent number: 7218503Abstract: A method for removing a substrate that is attached to a bipolar electrostatic chuck (ESC) by application of a bipolar ESC voltage is provided which includes discontinuing the bipolar ESC voltage after processing a current substrate, and determining a monopolar component error of the processing. The method also includes correcting the monopolar component error for a subsequent substrate.Type: GrantFiled: June 30, 2004Date of Patent: May 15, 2007Assignee: Lam Research CorporationInventor: Arthur M. Howald
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Patent number: 7140374Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.Type: GrantFiled: March 16, 2004Date of Patent: November 28, 2006Assignee: Lam Research CorporationInventors: Andrew D. Bailey, III, Shrikant P. Lohokare, Arthur M. Howald, Yunsang Kim
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Patent number: 7086347Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.Type: GrantFiled: May 6, 2002Date of Patent: August 8, 2006Assignee: Lam Research CorporationInventors: Arthur M. Howald, Andras Kuthi, Andrew D. Bailey, III, Butch Berney
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Patent number: 6965506Abstract: The present invention comprises a system and method for determining the reverse voltage and time to apply to the dechucking of a workpiece from an electrostatic chuck (ESC). The system for dechucking comprises a processing chamber operatively coupled to a microprocessor and a memory that is configured to determine the dechucking parameters for the workpiece. The method for determining dechucking parameters comprises generating a correlation between ESC resistance and dechucking parameters, performing a single experimental test on a new ESC and generating a fitting parameter, and using the correlation and the fitting parameter to determine the dechucking parameters.Type: GrantFiled: April 18, 2002Date of Patent: November 15, 2005Assignee: Lam Research CorporationInventor: Arthur M. Howald
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Patent number: 6876155Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. A matching network includes first and second portions respectively between the source and terminals and between the terminals and the antenna plasma excitation coil. In response to indications of impedance matching between the source and its load, currents flowing between (1) the first portion and the terminals and (2) the terminals and the coil are controlled so the latter exceeds the former. The indications control impedances of the first and second portions or the first portion impedance and the source frequency. The coil can include a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding.Type: GrantFiled: December 31, 2002Date of Patent: April 5, 2005Assignee: Lam Research CorporationInventors: Arthur M. Howald, Andras Kuthi
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Patent number: 6842147Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.Type: GrantFiled: July 22, 2002Date of Patent: January 11, 2005Assignee: Lam Research CorporationInventors: Arthur M. Howald, Andras Kuthi, Mark Henry Wilcoxson, Andrew D. Bailey, III
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Patent number: 6838832Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.Type: GrantFiled: September 26, 2002Date of Patent: January 4, 2005Assignee: Lam Research CorporationInventors: Arthur M. Howald, Andras Kuthi, Andrew D. Bailey, III
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Patent number: 6790375Abstract: A glass workpiece being processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during lifting of the workpiece from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation.Type: GrantFiled: September 30, 1998Date of Patent: September 14, 2004Assignee: Lam Research CorporationInventors: Arthur M. Howald, John P. Holland
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Publication number: 20040124779Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. A matching network includes first and second portions respectively between the source and terminals and between the terminals and the antenna plasma excitation coil. In response to indications of impedance matching between the source and its load, currents flowing between (1) the first portion and the terminals and (2) the terminals and the coil are controlled so the latter exceeds the former. The indications control impedances of the first and second portions or the first portion impedance and the source frequency. The coil can include a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding.Type: ApplicationFiled: December 31, 2002Publication date: July 1, 2004Inventors: Arthur M. Howald, Andras Kuthi
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Publication number: 20040085246Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.Type: ApplicationFiled: July 22, 2002Publication date: May 6, 2004Applicant: Lam Research CorporationInventors: Arthur M. Howald, Andras Kuthi, Mark Henry Wilcoxson, Andrew D. Bailey
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Patent number: 6646385Abstract: A spiral-like multi-turn coil excites a plasma for treating a workpiece in a vacuum plasma processor. In one embodiment two of the turns have a discontinuity. Each discontinuity has a capacitor connected across it. An RF source drives the coil via a matching network, an inductor connected to one coil excitation terminal and a capacitor connected to another coil excitation terminal. The impedances of the inductors and the capacitors at the RF source frequency and the discontinuity locations are such as to cause a standing wave voltage of the coil to have (1) equal and opposite values at the coil terminals, (2) sudden amplitude and slope changes, slope reversals and polarity reversals at each of the discontinuities, and (3) three gradual standing wave voltage polarity reversals, spaced from each other by 120°. Two of the gradual polarity reversals are azimuthally aligned with the discontinuities. In a second embodiment, one turn has a discontinuity having a series capacitor connected across it.Type: GrantFiled: August 26, 2002Date of Patent: November 11, 2003Assignee: Lam Research CorporationInventors: Arthur M. Howald, Brian McMillin, Frank Yun Lin
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Publication number: 20030205327Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.Type: ApplicationFiled: May 6, 2002Publication date: November 6, 2003Inventors: Arthur M. Howald, Andras Kuthi, Andrew D. Bailey, Butch Berney
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Publication number: 20030038114Abstract: The present invention comprises a system and method for determining the reverse voltage and time to apply to the dechucking of a workpiece from an electrostatic chuck (ESC). The system for dechucking comprises a processing chamber operatively coupled to a microprocessor and a memory that is configured to determine the dechucking parameters for the workpiece. The method for determining dechucking parameters comprises generating a correlation between ESC resistance and dechucking parameters, performing a single experimental test on a new ESC and generating a fitting parameter, and using the correlation and the fitting parameter to determine the dechucking parameters.Type: ApplicationFiled: April 18, 2002Publication date: February 27, 2003Applicant: Lam Research CorporationInventor: Arthur M. Howald
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Publication number: 20030001511Abstract: A spiral-like multi-turn coil excites a plasma for treating a workpiece in a vacuum plasma processor. In one embodiment two of the turns have a discontinuity. Each discontinuity has a capacitor connected across it. An RF source drives the coil via a matching network, an inductor connected to one coil excitation terminal and a capacitor connected to another coil excitation terminal. The impedances of the inductors and the capacitors at the RF source frequency and the discontinuity locations are such as to cause a standing wave voltage of the coil to have (1) equal and opposite values at the coil terminals, (2) sudden amplitude and slope changes, slope reversals and polarity reversals at each of the discontinuities, and (3) three gradual standing wave voltage polarity reversals, spaced from each other by 120°. Two of the gradual polarity reversals are azimuthally aligned with the discontinuities. In a second embodiment, one turn has a discontinuity having a series capacitor connected across it.Type: ApplicationFiled: August 26, 2002Publication date: January 2, 2003Applicant: Lam Research CorporationInventors: Arthur M. Howald, Brian McMillin, Frank Yun Lin
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Patent number: 6441555Abstract: A spiral-like multi-turn coil excites a plasma for treating a workpiece in a vacuum plasma processor. In one embodiment two of the turns have a discontinuity. Each discontinuity has a capacitor connected across it. An RF source drives the coil via a matching network, an inductor connected to one coil excitation terminal and a capacitor connected to another coil excitation terminal. The impedances of the inductors and the capacitors at the RF source frequency and the discontinuity locations are such as to cause a standing wave voltage of the coil to have (1) equal and opposite values at the coil terminals, (2) sudden amplitude and slope changes, slope reversals and polarity reversals at each of the discontinuities, and (3) three gradual standing wave voltage polarity reversals, spaced from each other by 120°. Two of the gradual polarity reversals are azimuthally aligned with the discontinuities. In a second embodiment, one turn has a discontinuity having a series capacitor connected across it.Type: GrantFiled: March 31, 2000Date of Patent: August 27, 2002Assignee: Lam Research CorporationInventors: Arthur M. Howald, Brian McMillin, Frank Yun Lin