Abstract: A memory is provided that includes multiple memory banks, each one of the memory banks being associated with a read multiplexer. A first read multiplexer couples a first plurality of bit lines to a first sense node pair, and a second read multiplexer couples a second plurality of bit lines to a second sense node pair. A first sense amplifier is coupled to the first sense node pair. The second sense node pair may be coupled to the same sense amplifier or a different sense amplifier.

Abstract: A memory is provided with a clock circuit configured to simultaneously assert a write multiplexer clock signal and a read multiplexer clock signal during a scan mode of operation. In the scan mode of operation, a scan in signal routes through a write multiplexer to a first bit line while the write multiplexer clock signal is asserted. Similarly, the scan in signal routes from the first bit line through a read multiplexer while the read multiplexer clock signal is asserted.

Abstract: A memory is provided with a clock circuit configured to simultaneously assert a write multiplexer clock signal and a read multiplexer clock signal during a scan mode of operation. In the scan mode of operation, a scan in signal routes through a write multiplexer to a first bit line while the write multiplexer clock signal is asserted. Similarly, the scan in signal routes from the first bit line through a read multiplexer while the read multiplexer clock signal is asserted.

Abstract: A pseudo-triple-port memory is provided with read datapaths and write datapaths. The pseudo-triple-port memory includes a plurality of pseudo-triple-port bitcells, each pseudo-triple-port first bitcell having a first read port coupled to a first bit line, a second read port coupled to a second bit line, and a write port coupled to the first bit line and to the second bit line.

Abstract: Various implementations provide systems and methods for reading data from memory bit cells. An example implementation includes a read circuit that provides a single-ended output from a sensing stage. The single-ended output is received by a reset-set (RS) latch, which also receives a virtual bit line signal. The single-ended output and the virtual bit line signal provide complementary inputs to the RS latch, and the RS latch stores a sensed bit, and the sensed bit may be driven onto a data bus.

Abstract: Various implementations provide systems and methods for reading data from memory bit cells. An example implementation includes a read circuit that provides a single-ended output from a sensing stage. The single-ended output is received by a reset-set (RS) latch, which also receives a virtual bit line signal. The single-ended output and the virtual bit line signal provide complementary inputs to the RS latch, and the RS latch stores a sensed bit, and the sensed bit may be driven onto a data bus.

Abstract: A memory is provided that is configured to practice two different modes of read operation, such as both a normal read operation and a burst-mode read operation. In one example, the memory is a pseudo-dual-port memory. The memory may include an address comparator to perform a time-division multiplexing to first compare a read address to a stored address and then to compare a write address to the stored address.

Abstract: A memory is provided that is configured to practice two different modes of read operation, such as both a normal read operation and a burst-mode read operation. In one example, the memory is a pseudo-dual-port memory. The memory may include an address comparator to perform a time-division multiplexing to first compare a read address to a stored address and then to compare a write address to the stored address.

Abstract: A pseudo-triple-port memory is provided with read datapaths and write datapaths. The pseudo-triple-port memory includes a plurality of pseudo-triple-port bitcells, each pseudo-triple-port first bitcell having a first read port coupled to a first bit line, a second read port coupled to a second bit line, and a write port coupled to the first bit line and to the second bit line.

Abstract: A memory is provided that includes multiple memory banks, each one of the memory banks being associated with a read multiplexer. A first read multiplexer couples a first plurality of bit lines to a first sense node pair, and a second read multiplexer couples a second plurality of bit lines to a second sense node pair. A first sense amplifier is coupled to the first sense node pair. The second sense node pair may be coupled to the same sense amplifier or a different sense amplifier.

Abstract: A memory is provided that is configured to practice both a normal read operation and also a burst mode read operation. A column multiplexer selects from a plurality of columns using a pair of pass transistor for each column. The column multiplexer drives a true input node and a complement input node of an output data latch.

Abstract: A charge-transfer transistor couples between a bit line and a sense node for a sense amplifier. During a read operation, a charge-transfer driver drives a gate voltage of the charge-transfer transistor to control whether the charge-transfer transistor conducts during a charge-transfer period. To assist the charge-transfer by the charge-transfer transistor, a first and second cross-coupled transistor are coupled between the bit line and a complement bit line.

Abstract: A pseudo-triple-port memory is provided that includes a plurality of pseudo-triple-port bitcells, each pseudo-triple-port first bitcell having a first read port including a first word line coupled to a first bit line through a first access transistor, a second read port including a second word line coupled to a second bit line through a second access transistor, and a write port including both the word lines, both the bit lines, and the pair of access transistors.

Abstract: A memory is provided that is configured to practice both a normal read operation and also a burst mode read operation. A column multiplexer selects from a plurality of columns using a pair of pass transistor for each column. The column multiplexer drives a true input node and a complement input node of an output data latch.

Abstract: A bitcell architecture for a pseudo-triple-port memory is provided that includes a a bitcell arranged on a semiconductor substrate, the bitcell defining a bitcell width and a bitcell height and including a first access transistor and a second access transistor. A first metal layer adjacent the semiconductor substrate is patterned to form a pair of local bit lines arranged within the bitcell width. The pair of local bit lines includes a local bit line coupled to a terminal of the first access transistor and includes a complement local bit line coupled to a terminal of the second access transistor.

Abstract: A word line decoder for pseudo-triple-port memory is provided that includes a first logic gate for decoding a word line address to a first word line in a word line pair and a first word line clock signal. The decoder further includes a second logic gate for decoding a word line address to a second word line in the word line pair and a second word line clock signal.

Abstract: A pseudo-triple-port memory is provided with read datapaths and write datapaths. The pseudo-triple-port memory includes a plurality of pseudo-triple-port bitcells, each pseudo-triple-port first bitcell having a first read port coupled to a first bit line, a second read port coupled to a second bit line, and a write port coupled to the first bit line and to the second bit line.

Abstract: A memory is provided that is configured to practice both a normal read operation and also a burst mode read operation. A burst mode address comparator compares a current row address to a preceding row address from a preceding read operation to determine whether a read operation is a normal read operation or a burst mode read operation. The burst mode address comparator invokes the burst mode despite the presence of an intervening write operation to a row address not equal to the preceding row address.

Abstract: A memory is provided that is configured to practice both a normal read operation and also a burst mode read operation. A burst mode address comparator compares a current row address to a preceding row address from a preceding read operation to determine whether a read operation is a normal read operation or a burst mode read operation. The burst mode address comparator invokes the burst mode despite the presence of an intervening write operation to a row address not equal to the preceding row address.

Abstract: A word line decoder for pseudo-triple-port memory is provided that includes a first logic gate for decoding a word line address to a first word line in a word line pair and a first word line clock signal. The decoder further includes a second logic gate for decoding a word line address to a second word line in the word line pair and a second word line clock signal.