Patents by Inventor Asao Nishimura

Asao Nishimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8907475
    Abstract: Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: December 9, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Hanae Shimokawa, Tasao Soga, Hiroaki Okudaira, Toshiharu Ishida, Tetsuya Nakatsuka, Yoshiharu Inaba, Asao Nishimura
  • Patent number: 8629481
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: January 14, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Publication number: 20130286621
    Abstract: Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.
    Type: Application
    Filed: June 21, 2013
    Publication date: October 31, 2013
    Inventors: Hanae SHIMOKAWA, Tasao SOGA, Hiroaki OKUDAIRA, Toshiharu ISHIDA, Tetsuya NAKATSUKA, Yoshiharu INABA, Asao NISHIMURA
  • Patent number: 8503189
    Abstract: Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.
    Type: Grant
    Filed: May 4, 2010
    Date of Patent: August 6, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Hanae Shimokawa, Tasao Soga, Hiroaki Okudaira, Toshiharu Ishida, Tetsuya Nakatsuka, Yoshiharu Inaba, Asao Nishimura
  • Publication number: 20110140185
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Application
    Filed: February 22, 2011
    Publication date: June 16, 2011
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Patent number: 7910922
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: March 22, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Patent number: 7910960
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: March 22, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Publication number: 20100301334
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Application
    Filed: August 11, 2010
    Publication date: December 2, 2010
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Publication number: 20100214753
    Abstract: Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.
    Type: Application
    Filed: May 4, 2010
    Publication date: August 26, 2010
    Inventors: Hanae SHIMOKAWA, Tasao Soga, Hiroaki Okudaira, Toshiharu Ishida, Tetsuya Nakatsuka, Yoshiharu Inaba, Asao Nishimura
  • Patent number: 7709746
    Abstract: Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.
    Type: Grant
    Filed: January 13, 2006
    Date of Patent: May 4, 2010
    Assignee: Renesas Technology Corp.
    Inventors: Hanae Shimokawa, Tasao Soga, Hiroaki Okudaira, Toshiharu Ishida, Tetsuya Nakatsuka, Yoshiharu Inaba, Asao Nishimura
  • Publication number: 20090230448
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Application
    Filed: April 30, 2009
    Publication date: September 17, 2009
    Applicant: RENESAS TECHNOLOGY CORP.
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Patent number: 7550763
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Grant
    Filed: June 13, 2007
    Date of Patent: June 23, 2009
    Assignee: Renesas Technology Corp.
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Patent number: 7420284
    Abstract: A semiconductor device includes a semiconductor chip formed with connection terminals, an elastic structure interposed between a main surface of the chip and a wiring substrate formed with wirings connected at first ends thereof to the connection terminals, and bump electrodes connected to the other ends of the wirings. The connection terminals may be at a center part or in peripheral part(s) of the chip main surface and both the elastic structure and wiring substrate are not provided at locations of connection terminals. A resin body seals at least the connection terminals and the exposed first ends of wirings (leads). In a scheme in which the connection terminals are located in a peripheral part of the chip main surface, the wiring substrate protrudes beyond the chip boundary where the connection terminals are arranged, and the resin body shape is restricted by the protruding part of the wiring substrate.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: September 2, 2008
    Assignee: Renesas Technology Corp.
    Inventors: Chuichi Miyazaki, Yukiharu Akiyama, Masnori Shibamoto, Tomoaki Kudaishi, Ichiro Anjoh, Kunihiko Nishi, Asao Nishimura, Hideki Tanaka, Ryosuke Kimoto, Kunihiro Tsubosaki, Akio Hasebe
  • Patent number: 7388295
    Abstract: A multi-chip module has at least two semiconductor chips. Each of the semiconductor chips has chip electrodes of the semiconductor chip, electrically conductive interconnections for electrically connection with the chip electrodes, electrically conductive lands for electrically connection with the interconnections, external terminals placed on the lands, and a stress-relaxation layer intervening between the lands and the semiconductor chip. The semiconductor chips are placed on a mounting board via the external terminals. The distance between farthest ones of external terminal positioned at an outermost end portions of said second semiconductor chip is smaller than that of the first semiconductor chip.
    Type: Grant
    Filed: February 10, 2006
    Date of Patent: June 17, 2008
    Assignee: Renesas Technology Corp.
    Inventors: Atsushi Kazama, Akihiro Yaguchi, Hideo Miura, Asao Nishimura
  • Patent number: 7378333
    Abstract: The present invention is a semiconductor device having the semiconductor element obtained by cutting a semiconductor wafer with the electrode pad formed on one side along a scribe line, a semiconductor element protective layer on the semiconductor element which has a opening on the pad, a stress cushioning layer on the layer which has the opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and the conductor protective layer on the layers, the layer and the conductor protective layer forming the respective end faces on the end surface of the semiconductor element inside the scribe line and exposing the range from the end face of the end surface to the inside of the scribe line.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: May 27, 2008
    Assignee: Renesas Technology Corp.
    Inventors: Toshiya Satoh, Masahiko Ogino, Tadanori Segawa, Yoshihide Yamaguchi, Hiroyuki Tenmei, Atsushi Kazama, Ichiro Anjo, Asao Nishimura
  • Publication number: 20070241330
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Application
    Filed: June 13, 2007
    Publication date: October 18, 2007
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Patent number: 7247879
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Grant
    Filed: June 23, 2004
    Date of Patent: July 24, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Patent number: 7217992
    Abstract: Semiconductor devices,-semiconductor wafers, and semiconductor modules are provided: wherein the semiconductor device has a small warp; damages at chip edge and cracks in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility. The semiconductor device 17 comprising: a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on a same plane.
    Type: Grant
    Filed: June 7, 2004
    Date of Patent: May 15, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Masahiko Ogino, Takumi Ueno, Shuji Eguchi, Akira Nagai, Toshiya Satoh, Toshiaki Ishii, Hiroyoshi Kokaku, Tadanori Segawa, Nobutake Tsuyuno, Asao Nishimura, Ichiro Anjoh
  • Publication number: 20060261494
    Abstract: A semiconductor device includes a semiconductor chip formed with connection terminals, an elastic structure interposed between a main surface of the chip and a wiring substrate formed with wirings connected at first ends thereof to the connection terminals, and bump electrodes connected to the other ends of the wirings. The connection terminals may be at a center part or in peripheral part(s) of the chip main surface and both the elastic structure and wiring substrate are not provided at locations of connection terminals. A resin body seals at least the connection terminals and the exposed first ends of wirings (leads). In a scheme in which the connection terminals are located in a peripheral part of the chip main surface, the wiring substrate protrudes beyond the chip boundary where the connection terminals are arranged, and the resin body shape is restricted by the protruding part of the wiring substrate.
    Type: Application
    Filed: July 25, 2006
    Publication date: November 23, 2006
    Inventors: Chuichi Miyazaki, Yukiharu Akiyama, Masanori Shibamoto, Tomoaki Kudaishi, Ichiro Anjoh, Kunihiko Nishi, Asao Nishimura, Hideki Tanaka, Ryosuke Kimoto, Kunihiro Tsubosaki, Akio Hasebe
  • Patent number: 7138722
    Abstract: Described herein is a stacked package according to the present invention, wherein a plurality of tape carriers which seal semiconductor chips, are multilayered in upward and downward directions. In the stacked package, one ends of leads formed over the whole surfaces of each tape carrier are electrically connected to their corresponding connecting terminals of the semiconductor chip. Other ends of the leads are electrically connected to their corresponding through holes defined in the tape carrier. Connecting terminals common to the plurality of semiconductor chips are formed at the same places of the plurality of tape carriers and withdrawn to the same external connecting terminals through a plurality of mutually-penetrated through holes.
    Type: Grant
    Filed: February 15, 2005
    Date of Patent: November 21, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Toshio Miyamoto, Asao Nishimura, Koki Noguchi, Satoshi Michishita, Masashi Horiguchi, Masaharu Kubo, Kazuyoshi Shiba