Abstract: A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.

Abstract: A method for forming a high thermal conductivity heat sink to IC package interface is disclosed. The method uses reactive getter materials added to a two phase solder system having a phase change temperature that is about the normal operating temperature range of the IC, to bind absorbed and dissolved oxygen in the two phase solder interface material at or near the air to solder surface. Over time this chemical binding action results in an oxide layer at the air to solder surface that slows the rate of oxygen absorption into the solder interface material, and thus reduces the harmful oxidation of the solder to IC package interface and the solder to heat sink interface.

Abstract: Embodiments of the invention includes a heat dissipating device. The heat dissipating device includes a main body having a surface, wherein the surface is plated or coated with at least two different metals to form a design effective for bonding to solder and for adhering to polymer in a polymer solder hybrid. The heat dissipating device also includes surface perturbations.

Abstract: An integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and a method of making an electronic assembly.

Abstract: Embodiments of the invention includes a heat dissipating device. The heat dissipating device includes a main body having a surface, wherein the surface is plated or coated with at least two different metals to form a design effective for bonding to solder and for adhering to polymer in a polymer solder hybrid. The heat dissipating device also includes surface perturbations.

Abstract: A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.

Abstract: A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.

Abstract: A thermal interface material is described for thermal coupling of an electronic component to a thermally conductive member. The thermal interface material includes a viscoelastic polymer matrix material, fusible solder particles in the matrix material, and filler particles in the matrix material. The solder particles have a melting temperature below a selected temperature (e.g. 157° C. for indium) and the filler particles have a melting temperature substantially above the selected temperature (e.g. 961° C. for silver). The filler particles keep the thermal interface material intact under adverse thermal and stress conditions.

Abstract: A thermal interface material made with a phase change polymer and a fusible filler material.

Abstract: According to one aspect of the invention, a structure and method for providing improved thermal conductivity of a thermal interface material (TIM) made of phase changed polymer matrix and a fusible filler material is disclosed. The TIM may also have a non-fusible filler material and a percentage of a non-phase change polymer added to the phase change polymer matrix. The TIM, used to mate and conduct heat between two or more components, can be highly filled systems in a polymeric matrix where the fillers are thermally more conductive than the polymer matrix.

Abstract: Embodiments of the present invention provide various polymeric matrices that may be used as a binder matrix for polymer solder hybrid thermal interface materials. In alternative embodiments the binder matrix material may be phophozene, perfluoro ether, polyether, or urethane. For one embodiment, the binder matrix is selected to provide improved adhesion to a variety of interfaces. For an alternative embodiment the binder matrix is selected to provide low contact resistance. In alternative embodiments, polymeric materials containing fusible and non-fusible particles may be used in application where heat removal is desired and is not restricted to thermal interface materials for microelectronic devices.

Abstract: Embodiments of the present invention provide various polymeric matrices that may be used as a binder matrix for polymer solder hybrid thermal interface materials. In alternative embodiments the binder matrix material may be phophozene, perfluoro ether, polyether, or urethane. For one embodiment, the binder matrix is selected to provide improved adhesion to a variety of interfaces. For an alternative embodiment the binder matrix is selected to provide low contact resistance. In alternative embodiments, polymeric materials containing fusible and non-fusible particles may be used in application where heat removal is desired and is not restricted to thermal interface materials for microelectronic devices.

Abstract: A process of making a reworkable thermal interface material is described. The reworkable thermal interface material is bonded to a die and a heat sink. The reworkable thermal interface material includes a phase-change polymer matrix material. Other materials in the reworkable thermal interface material can include heat transfer particles and low melting-point metal particles. The phase-change polymer matrix material includes a melting temperature below a selected temperature and the heat transfer particles have a melting temperature substantially above the selected temperature. The heat transfer particles act as a spacer limit, which holds the thermal interface material to a given bond-line thickness during use.

Abstract: A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.

Abstract: A chip package includes a thermal interface material disposed between a die backside and a heat sink. A dielectric sheet is also disposed between the die backside and the heat sink. The dielectric sheet diminishes overall heat transfer from the die to the heat sink by a small fraction of total possible heat transfer without the dielectric sheet. A method of operating the chip includes biasing the chip with the dielectric sheet in place.

Abstract: A silicon wafer with an array of integrated circuit (IC) dies formed on the wafer is provided with a protective coat applied to a surface of the wafer to protect the IC dies from debris created during a laser scribing process. The IC dies can include die bumps that can be adversely affected by debris from the laser scribing process. The protective coat is a tape or a film that may be optically transparent, chemically non-reactive to the laser energy and formed of material that can be ablated by the laser scribing. The protective coat is removed from the IC dies after laser scribing leaving the IC dies and die bumps clean of any debris, thereby decreasing the number of defective dies.

Abstract: A process of making a multi-layer thermal interface material is depicted. The multi-layer thermal interface material is attached between an integrated heat spreader and a die. Processing of the multi-layer thermal interface material includes stamping or other pressure processing.

Abstract: One embodiment of the invention includes a thermal interface material. The thermal interface material includes a polymer matrix; a plurality of fusible particles dispersed within the polymer matrix; and a plurality of non-fusible particles dispersed within the polymer matrix. The fusible particles have a mean particle size that is greater than the maximum particle size of the non-fusible particles. The thermal interface material improves performance of an integrated circuit.

Abstract: A method for forming a high thermal conductivity heat sink to IC package interface is disclosed. The method uses reactive getter materials added to a two phase solder system having a phase change temperature that is about the normal operating temperature range of the IC, to bind absorbed and dissolved oxygen in the two phase solder interface material at or near the air to solder surface. Over time this chemical binding action results in an oxide layer at the air to solder surface that slows the rate of oxygen absorption into the solder interface material, and thus reduces the harmful oxidation of the solder to IC package interface and the solder to heat sink interface.

Abstract: A process of making a multi-layer thermal interface material is depicted. The multi-layer thermal interface material is attached between an integrated heat spreader and a die. Processing of the multi-layer thermal interface material includes stamping or other pressure processing.