Patents by Inventor Ashok Sinha

Ashok Sinha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9876135
    Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.
    Type: Grant
    Filed: February 11, 2017
    Date of Patent: January 23, 2018
    Assignee: SUNPREME
    Inventors: Ashok Sinha K., Roman Milter, Robert Broesler
  • Publication number: 20170162744
    Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.
    Type: Application
    Filed: February 11, 2017
    Publication date: June 8, 2017
    Applicant: SUNPREME, LTD.
    Inventors: Ashok Sinha K., Roman Milter, Robert Broesler
  • Patent number: 9577140
    Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: February 21, 2017
    Inventors: Ashok Sinha, Roman Milter, Robert Broesler
  • Patent number: 9550120
    Abstract: A method for gamifying a toll image review process includes receiving an image of a vehicle that has utilized a toll road and identifying a region of interest of the image depicting an identifier of the vehicle. A second image is generated that includes the region of interest and is preprocessed to generate a plurality of images of the region of interest. Each of the images includes unique display settings. The images are displayed within a graphical user interface along with progress information for a first user. The progress information is related to an amount of vehicles to identify. Progress information is displayed for additional users. An input including the identifier is received using the user interface. Images related to an image of a second vehicle's region of interest are displayed. A progress of the additional users is monitored and then the displayed progress information is updated.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: January 24, 2017
    Assignee: Cubic Corporation
    Inventors: Charles F. Mitchell, Dennis Moore, Ashok Sinha, Michael Sinha, Stephen Bliss
  • Publication number: 20160228769
    Abstract: A method for gamifying a toll image review process includes receiving an image of a vehicle that has utilized a toll road and identifying a region of interest of the image depicting an identifier of the vehicle. A second image is generated that includes the region of interest and is preprocessed to generate a plurality of images of the region of interest. Each of the images includes unique display settings. The images are displayed within a graphical user interface along with progress information for a first user,. The progress information is related to an amount of vehicles to identify. Progress information is displayed for additional users. An input including the identifier is received using the user interface. Images related to an image of a second vehicle's region of interest are displayed. A progress of the additional users is monitored and then the displayed progress information is updated.
    Type: Application
    Filed: February 8, 2016
    Publication date: August 11, 2016
    Applicant: Cubic Corporation
    Inventors: Charles F. Mitchell, Dennis Moore, Ashok Sinha, Michael Sinha, Stephen Bliss
  • Publication number: 20160111589
    Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.
    Type: Application
    Filed: May 12, 2015
    Publication date: April 21, 2016
    Applicant: SUNPREME, LTD.
    Inventors: Ashok Sinha, Roman Milter, Robert Broesler
  • Patent number: 8796066
    Abstract: Substrates for solar cells are prepared by etching a plurality of metallurgical grade wafers; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride without disturbing the aluminum layer. A solar cell is then fabricated on the front surface of the wafer while the aluminum remain to serve as the back contact of the cell.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: August 5, 2014
    Assignee: Sunpreme, Inc.
    Inventors: Ashok Sinha, Wen Ma
  • Publication number: 20120298039
    Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
    Type: Application
    Filed: August 6, 2012
    Publication date: November 29, 2012
    Applicant: MATTSON TECHNOLOGY, INC.
    Inventors: Bruce W. PEUSE, Yaozhi HU, Paul Janis TIMANS, Guangcai XING, Wilfried LERCH, Sing-Pin TAY, Stephen E. SAVAS, Georg ROTERS, Zsolt NENYEI, Ashok SINHA
  • Patent number: 8236706
    Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
    Type: Grant
    Filed: December 12, 2008
    Date of Patent: August 7, 2012
    Assignee: Mattson Technology, Inc.
    Inventors: Bruce W. Peuse, Yaozhi Hu, Paul Janis Timans, Guangcai Xing, Wilfried Lerch, Sing-Pin Tay, Stephen E. Savas, Georg Roters, Zsolt Nenyei, Ashok Sinha
  • Patent number: 8084683
    Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.
    Type: Grant
    Filed: May 14, 2011
    Date of Patent: December 27, 2011
    Inventor: Ashok Sinha
  • Patent number: 8083963
    Abstract: A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.
    Type: Grant
    Filed: April 3, 2007
    Date of Patent: December 27, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Gerardo A. Delgadino, Indrajit Lahiri, Teh-Tien Su, Sy-Yuan Brian Shieh, Ashok Sinha
  • Patent number: 8048806
    Abstract: In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
    Type: Grant
    Filed: March 10, 2006
    Date of Patent: November 1, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Michael C. Kutney, Daniel J. Hoffman, Gerardo A. Delgadino, Ezra R. Gold, Ashok Sinha, Xiaoye Zhao, Douglas H. Burns, Shawming Ma
  • Publication number: 20110220201
    Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.
    Type: Application
    Filed: May 14, 2011
    Publication date: September 15, 2011
    Applicant: SUNPREME, LTD.
    Inventor: Ashok Sinha
  • Publication number: 20110223708
    Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.
    Type: Application
    Filed: May 16, 2011
    Publication date: September 15, 2011
    Applicant: SUNPREME, LTD
    Inventor: Ashok Sinha
  • Publication number: 20110207259
    Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.
    Type: Application
    Filed: May 3, 2011
    Publication date: August 25, 2011
    Applicant: SUNPREME, LTD.
    Inventor: Ashok Sinha
  • Patent number: 7960644
    Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.
    Type: Grant
    Filed: November 7, 2008
    Date of Patent: June 14, 2011
    Assignee: Sunpreme, Ltd.
    Inventor: Ashok Sinha
  • Patent number: 7956283
    Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.
    Type: Grant
    Filed: November 7, 2008
    Date of Patent: June 7, 2011
    Assignee: Sunpreme, Ltd.
    Inventor: Ashok Sinha
  • Patent number: 7951640
    Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.
    Type: Grant
    Filed: December 2, 2009
    Date of Patent: May 31, 2011
    Assignee: Sunpreme, Ltd.
    Inventor: Ashok Sinha
  • Publication number: 20100317146
    Abstract: Substrates for solar cells are prepared by etching a plurality of metallurgical grade wafers; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride without disturbing the aluminum layer. A solar cell is then fabricated on the front surface of the wafer while the aluminum remain to serve as the back contact of the cell.
    Type: Application
    Filed: August 24, 2010
    Publication date: December 16, 2010
    Applicant: SUNPREME, LTD.
    Inventors: Ashok Sinha, Wen Ma
  • Publication number: 20100151694
    Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
    Type: Application
    Filed: December 12, 2008
    Publication date: June 17, 2010
    Applicant: MATTSON TECHNOLOGY, INC.
    Inventors: Bruce W. Peuse, Yaozhi Hu, Paul Janis Timans, Guangcai Xing, Wilfried Lerch, Sing-Pin Tay, Stephen E. Savas, Georg Roters, Zsolt Nenyei, Ashok Sinha