Abstract: Novel high purity dimethylaluminium chloride compositions are provided that are suitable for semiconductor applications, such as atomic layer etch and aluminum ion implantation. The reduction or minimization of specified gaseous impurities allows the vapor phase of the DMAC to have purity levels of 99.9 mol % or higher to selectively etch various atomic layers with high selectivity and high etch precision at acceptable etch rates and 99 mol % or higher to ion implant aluminum ions without substantial implantation of C2H3 ions into a wafer device, thereby avoiding degradation or failure of the wafer device. Storage conditions are established that are conducive to maintaining the high purity levels required for such semiconductor applications.

Abstract: A composition comprising acetylene fluid at least partially solubilized in an improved solvent is described. The improved solvents exhibit non-toxicity and are further characterized by low vapor pressures to minimize solvent carryover during delivery of the acetylene fluid, while retaining suitable acetylene solubilizing capacity.

Abstract: A mobile storage apparatus for containers is provided. The apparatus provides a unique support assembly for holding a container. The assembly includes a latch mechanism that allows a clamp of cylinder to be moved from a closed position to an open position which creates clearance around a neck of cylinder to allow it to rotate without falling out of clamp. The other end of apparatus is structurally configured with a release plunger that can be retracted to allow rotation of cylinder along said other end. Rotatable wheels on a user side with a braking mechanism along a handle and a foot ledge allow improved maneuverability and stability.

Abstract: Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Abstract: Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Abstract: A carbon adsorbent storage and dispensing system is provided with a structurally modified particulate carbon adsorbent designed with optimal volumetric surface area for a certain range of particle sizes. Bulk density and specific surface area are carefully balanced to ensure the volumetric surface area remains within an optimal range to create high performance, as measured by dispensing capacity of the dopant fluid that is reversibly adsorbed onto the structurally modified particulate carbon adsorbent.

Abstract: Methods for selectively etching SiGe relative to Si are provided. Some of the methods incorporate formation of a passivation layer on a surface of the Si layer to enhance SiGe etchant selectivity and the use of interhalogen gases that preferentially etch the SiGe as opposed to the Si in the presence of the passivation layer. The methods can occur in a cyclic manner until the desired thickness of the SiGe layer is obtained.

Abstract: Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Abstract: A mobile storage apparatus for containers is provided. The apparatus provides a unique support assembly for holding a container. The assembly includes a latch mechanism that allows a clamp of cylinder to be moved from a closed position to an open position which creates clearance around a neck of cylinder to allow it to rotate without falling out of clamp. The other end of apparatus is structurally configured with a release plunger that can be retracted to allow rotation of cylinder along said other end. Rotatable wheels on a user side with a braking mechanism along a handle and a foot ledge allow improved maneuverability and stability.

Abstract: A composition comprising acetylene fluid at least partially solubilized in an improved solvent is described. The improved solvents exhibit non-toxicity and are further characterized by low vapor pressures to minimize solvent carryover during delivery of the acetylene fluid, while retaining suitable acetylene solubilizing capacity.

Abstract: A mobile storage apparatus for containers is provided. The apparatus provides a unique support assembly for holding a container. The assembly includes a latch mechanism that allows a clamp of cylinder to be moved from a closed position to an open position which creates clearance around a neck of cylinder to allow it to rotate without falling out of clamp. The other end of apparatus is structurally configured with a release plunger that can be retracted to allow rotation of cylinder along said other end. Rotatable wheels on a user side with a braking mechanism along a handle and a foot ledge allow improved maneuverability and stability.

Abstract: A composition comprising acetylene fluid at least partially solubilized in an improved solvent is described. The improved solvents exhibit non-toxicity and are further characterized by low vapor pressures to minimize solvent carryover during delivery of the acetylene fluid, while retaining suitable acetylene solubilizing capacity.

Abstract: A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.

Abstract: A carbon adsorbent storage and dispensing system is provided with a structurally modified particulate carbon adsorbent designed with optimal volumetric surface area for a certain range of particle sizes. Bulk density and specific surface area are carefully balanced to ensure the volumetric surface area remains within an optimal range to create high performance, as measured by dispensing capacity of the dopant fluid that is reversibly adsorbed onto the structurally modified particulate carbon adsorbent.

Abstract: A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.

Abstract: A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.

Abstract: A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage.

Abstract: A novel method, composition and system for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture.

Abstract: A novel and improved inventive valve with a regulating function is provided that is capable of filling to higher fill pressures than previously attainable with conventional C-10 “on-off” valves. The valve contains a single flow passageway by which gas dispenses and enters the valve. A fill adapter is specially configured to engage the valve to allow filling at the higher pressures along the single flow passageway. The structure of the valve allows greater utilization of cylinder capacity; simplifies filling and dispensing with the single flow passageway; and allows for regulating gas pressure during delivery without increasing the overall size of the cylinder package.