Abstract: The present invention relates to an improved method for increasing a beam current as part of an ion implantation process. The method comprises introducing a dopant source and an assistant species into an ion implanter. A plasma of ions is formed and then extracted from the ion implanter. Non-carbon target ionic species are separated to produce a beam current that is higher in comparison to that generated solely from the dopant source.

Abstract: A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.

Abstract: A mobile storage apparatus for containers is provided. The apparatus provides a unique support assembly for holding a container. The assembly includes a latch mechanism that allows a clamp of cylinder to be moved from a closed position to an open position which creates clearance around a neck of cylinder to allow it to rotate without falling out of clamp. The other end of apparatus is structurally configured with a release plunger that can be retracted to allow rotation of cylinder along said other end. Rotatable wheels on a user side with a braking mechanism along a handle and a foot ledge allow improved maneuverability and stability.

Abstract: A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage.

Abstract: A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably delivered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.

Abstract: A novel method, composition and system for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture.

Abstract: Disclosed are articles useful as the body of a container for containing gas under pressure, and containers which comprise the articles to which are affixed valves to control the flow of gas out of the container, wherein the articles comprise a hollow container body, having an external surface and having an opening through which gas can enter or leave the interior of the hollow container body; optionally but preferably a layer of fiber-reinforced polymer around the exterior of the container body, and an external layer of elastomer around and sealed to the external surface of the layer of fiber-reinforced polymer if present or else to the cylinder body.

Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract: A novel and improved inventive valve with a regulating function is provided that is capable of filling to higher fill pressures than previously attainable with conventional C-10 “on-off” valves. The valve contains a single flow passageway by which gas dispenses and enters the valve. A fill adapter is specially configured to engage the valve to allow filling at the higher pressures along the single flow passageway. The structure of the valve allows greater utilization of cylinder capacity; simplifies filling and dispensing with the single flow passageway; and allows for regulating gas pressure during delivery without increasing the overall size of the cylinder package.

Abstract: A modified vacuum actuated valve assembly and sealing mechanism is provided for improved sub-atmospheric flow stability characterized by the absence of delivery pressure spikes and flow excursions. The valve assembly includes a non-stationary thermoplastic seat and a stabber. The stabber is characterized by a top portion having a circular periphery designed to mechanically engage and disengage with an inner sealing surface of the thermoplastic seat. The sealing surface is coined to eliminate surface irregularities contained therein, thereby producing a relatively smooth coined mating inner sealing surface for the circular top portion of the stabber. The valve assembly also includes a modified bellows capable of fine tuning the delivery pressure of the valve assembly.

Abstract: A modified vacuum actuated valve assembly and sealing mechanism is provided for improved sub-atmospheric flow stability characterized by the absence of delivery pressure spikes and flow excursions. The valve assembly includes a non-stationary thermoplastic seat and a stabber. The stabber is characterized by a top portion having a circular periphery designed to mechanically engage and disengage with an inner sealing surface of the thermoplastic seat. The sealing surface is coined to eliminate surface irregularities contained therein, thereby producing a relatively smooth coined mating inner sealing surface for the circular top portion of the stabber. The valve assembly also includes a modified bellows capable of fine tuning the delivery pressure of the valve assembly.

Abstract: A valve integrated pressure regulator (VIPR) device that can be attached to the outlet of a gas cylinder, which can monitor the amount of gas in the cylinder is provided. Features of the disclosed device include an electronic control, electronic alarm and the electronic display that are powered by rechargeable battery that may be disposed within the VIPR shroud or within a removable cylinder base affixed to a bottom of the gas cylinder. Additional functionality and security features may be provided via additional internally disposed sensors and/or wireless or hard-wired communications with one or more auxiliary devices.

Abstract: Disclosed are articles useful as the body of a container for containing gas under pressure, and containers which comprise the articles to which are affixed valves to control the flow of gas out of the container, wherein the articles comprise a hollow container body, having an external surface and having an opening through which gas can enter or leave the interior of the hollow container body; optionally but preferably a layer of fiber-reinforced polymer around the exterior of the container body, and an external layer of elastomer around and sealed to the external surface of the layer of fiber-reinforced polymer if present or else to the cylinder body.

Abstract: The present invention relates to an improved composition for ion implantation. The composition comprises a dopant source and an assistant species wherein the assistant species in combination with the dopant gas produces a beam current of the desired dopant ion. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.

Abstract: The present invention relates to an improved composition for ion implantation. A dopant source comprising BF3 and an assistant species comprising Si2H6wherein the assistant species in combination with the dopant gas produces a boron-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.

Abstract: The present invention relates to an improved composition for ion implantation. A dopant source comprising GeF4 and an assistant species comprising CH3F is provided, wherein the assistant species in combination with the dopant gas can produces a Ge-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.

Abstract: A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably delivered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.

Abstract: A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract: A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.