Abstract: A nonvolatile semiconductor memory device according to an embodiment comprises a control unit, during a data erase, applying at least to a word line connected to a memory cell disposed most to a source line side a lower control voltage than that applied to a word line connected to a memory cell disposed most to a bit line side, of a plurality of word lines connected to at least a plurality of memory cells mutually written with data of an identical number of bits in a cell string.

Abstract: The compressor is provided with an oil separator for separating oil from refrigerant gas introduced into a separation chamber, an annular space for reserving oil separated from the refrigerant gas, and a reservoir chamber for reserving the thus separated oil. The oil separator is provided in a cylindrical hole formed in a discharge chamber from which the refrigerant gas is discharged and a lid for partitioning the cylindrical hole from the discharge chamber is provided in the cylindrical hole. The oil separator introduces the refrigerant gas from the discharge chamber to the separation chamber via the introduction passage. The annular space is provided around the lid and connected to the reservoir chamber via an oil passage. The reservoir chamber is connected to a crank chamber of a pressure lower than that in the discharge chamber.

Abstract: According to an aspect of the present invention, there is provided a semiconductor device including: a semiconductor substrate; active areas with island-like shapes formed on the semiconductor substrate; an element isolation area surrounding the active areas and including an element isolation groove formed on the semiconductor substrate and an element isolation film embedded into the element isolation groove; gate insulating films each formed on corresponding one of the active areas and having a first end portion that overhangs from the corresponding active area onto the element isolation area at one side and a second end portion that overhangs from the corresponding active area onto the element isolation area at the other side, wherein an overhang of the first end portion has a different length from a length of an overhang of the second end portion.

Abstract: A structure for sensing refrigerant flow rate in a compressor. The structure includes a passage forming member, a restriction hole, a differential pressure-type flow rate sensor, and a partition plate. The compressor includes a housing connected to an external refrigerant circuit via a refrigerant passage. The passage forming member is connected to an outer surface of the housing and forms a part of the refrigerant passage. The restriction hole divides the refrigerant passage into an upstream passage and a downstream passage. The upstream passage is formed in either the housing or the passage forming member. The sensor is provided in the passage forming member and detects pressure in the upstream passage and pressure in the downstream passage to sense flow rate of refrigerant in the refrigerant passage. The partition plate is disposed between the housing and the passage forming member. The restriction hole is formed in the partition plate to extend through the partition plate.

Abstract: A nonvolatile semiconductor memory device includes first electrodes, a second and a third electrode, a first film, a first inter layer film, a second inter layer film, and a second film. The first electrodes each have a charge storage and a control electrode. The second and the third electrodes are formed above the semiconductor substrate. The first film is formed on each sidewall of the second and third electrodes and formed on the surface of the semiconductor substrate. The first inter layer film filled in a gap between the second and third electrodes. The second inter layer film filled in a gap between the first and second electrode. The second film is formed on the first to third gate electrodes, the first film and the first inter layer film, and a second inter layer insulating film to suppress diffusion of hydrogen atoms included in the first inter layer film.

Abstract: A variable displacement compressor includes a housing assembly. A displacement control structure for the variable displacement compressor includes a passage forming member, a flat partition and a displacement control valve. The passage forming member is connected to an exterior surface of the housing assembly for forming a refrigerant passage for allowing the refrigerant to be discharged out from the compressor to an external refrigerant circuit. The flat partition is interposed between the passage forming member and the housing assembly. A throttle penetrates through the partition, which divides the refrigerant passage into an upstream passage and a downstream passage. The displacement control valve is provided in the passage forming member. The displacement control valve senses pressure of refrigerant in the upstream passage and pressure of the refrigerant in the downstream passage to control flow rate of the refrigerant flowing through a supply passage.

Abstract: A semiconductor device includes a first interlayer insulating film formed above a semiconductor substrate, a first source line formed on the first interlayer insulating film, a second interlayer insulating film formed on the first source line, a plurality of bit lines formed on the second interlayer insulating film so as to extend in a direction, the bit lines being arranged at same width and same width, a third interlayer insulating film formed above the bit lines, a second source line formed on the third interlayer insulating film, and a source shunt line formed between the second and third interlayer insulating films, the source shunt line electrically connecting the first and second source lines to each other, the source shunt line being located between the bit lines so as to extend in the same direction as the bit lines, the source shunt line including a width same as the bit lines.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 ?.

Abstract: The compressor has a differential pressure type flow rate detector that obtains the pressure in an upstream passage and the pressure in a downstream passage to detect a refrigerant flow rate within a refrigerant passage. The detector has an accommodation chamber, and a partition body slidably accommodated within the accommodation chamber. The partition body comparts the accommodation chamber into a high pressure chamber to which the pressure in the upstream passage is introduced, and a low pressure chamber to which the pressure in the downstream passage is introduced. The compressor has an oil separator having an oil introduction passage connected to the oil separating chamber and a high pressure introduction passage introducing the pressure in the upstream passage to the high pressure chamber. The oil introduction passage introduces the oil separated from the refrigerant by the oil separator to a pressure zone other than a discharge pressure zone.

Abstract: The compressor is provided with an oil separator for separating oil from refrigerant gas introduced into a separation chamber, an annular space for reserving oil separated from the refrigerant gas, and a reservoir chamber for reserving the thus separated oil. The oil separator is provided in a cylindrical hole formed in a discharge chamber from which the refrigerant gas is discharged and a lid for partitioning the cylindrical hole from the discharge chamber is provided in the cylindrical hole. The oil separator introduces the refrigerant gas from the discharge chamber to the separation chamber via the introduction passage. The annular space is provided around the lid and connected to the reservoir chamber via an oil passage. The reservoir chamber is connected to a crank chamber of a pressure lower than that in the discharge chamber.

Abstract: According to an aspect of the present invention, there is provided a semiconductor device including: a semiconductor substrate; active areas with island-like shapes formed on the semiconductor substrate; an element isolation area surrounding the active areas and including an element isolation groove formed on the semiconductor substrate and an element isolation film embedded into the element isolation groove; gate insulating films each formed on corresponding one of the active areas and having a first end portion that overhangs from the corresponding active area onto the element isolation area at one side and a second end portion that overhangs from the corresponding active area onto the element isolation area at the other side, wherein an overhang of the first end portion has a different length from a length of an overhang of the second end portion.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 ?.

Abstract: An ESD protection circuit for a semiconductor device including a bonding pad receiving a first power supply voltage; an interconnect layer provided in an underside of the bonding pad so as to be electrically conductive with the bonding pad; a semiconductor substrate provided with a first well of a predetermined conductive type in a predetermined region of a surface layer of the substrate, which first well receives a second power supply voltage having a different voltage from the first power supply voltage and provided with a confronting region confronting the underside of the interconnect layer over a dielectric layer, and the first well of the semiconductor substrate, the dielectric layer, the bonding pad and the interconnect layer constitute a capacitor.

Abstract: A semiconductor device includes a semiconductor substrate including an upper surface having a first region including a pair of first impurity diffusion regions and a first channel region located between the impurity diffusion regions and a second region including a recess having a predetermined depth relative to the upper surface, a first gate insulating film, a first gate electrode of a first transistor supplying a first voltage, a second gate insulating film having a second thickness larger than a first thickness of the first gate insulating film, an upper surface of the second gate insulating film located at a same level as an upper surface of the first gate insulating film, and a second gate electrode of a second transistor supplying a second voltage being higher than the first voltage.

Abstract: A compressor connected to an external refrigerant circuit is disclosed. The compressor is provided with a housing, a passage forming member coupled to an outer surface of the housing, and a differential pressure type flow rate detector provided in the passage forming member. The flow rate detector obtains the pressure in an upstream passage and the pressure in a downstream passage to detect a refrigerant flow rate within the refrigerant passage. The flow rate detector is provided with an accommodation chamber, a partition body, a compression spring, and a spring seat defining a maximum stroke amount of the partition body. The spring seat exists closer to the passage forming member side than a partition surface comparting the housing and the passage forming member, and is in contact with the partition surface.

Abstract: The compressor has a differential pressure type flow rate detector that obtains the pressure in an upstream passage and the pressure in a downstream passage to detect a refrigerant flow rate within a refrigerant passage. The detector has an accommodation chamber, and a partition body slidably accommodated within the accommodation chamber. The partition body comparts the accommodation chamber into a high pressure chamber to which the pressure in the upstream passage is introduced, and a low pressure chamber to which the pressure in the downstream passage is introduced. The compressor has an oil separator having an oil introduction passage connected to the oil separating chamber and a high pressure introduction passage introducing the pressure in the upstream passage to the high pressure chamber. The oil introduction passage introduces the oil separated from the refrigerant by the oil separator to a pressure zone other than a discharge pressure zone.

Abstract: A variable displacement compressor includes a housing assembly. A displacement control structure for the variable displacement compressor includes a passage forming member, a flat partition and a displacement control valve. The passage forming member is connected to an exterior surface of the housing assembly for forming a refrigerant passage for allowing the refrigerant to be discharged out from the compressor to an external refrigerant circuit. The flat partition is interposed between the passage forming member and the housing assembly. A throttle penetrates through the partition, which divides the refrigerant passage into an upstream passage and a downstream passage. The displacement control valve is provided in the passage forming member. The displacement control valve senses pressure of refrigerant in the upstream passage and pressure of the refrigerant in the downstream passage to control flow rate of the refrigerant flowing through a supply passage.

Abstract: A structure for sensing refrigerant flow rate in a compressor. The structure includes a passage forming member, a restriction hole, a differential pressure-type flow rate sensor, and a partition plate. The compressor includes a housing connected to an external refrigerant circuit via a refrigerant passage. The passage forming member is connected to an outer surface of the housing and forms a part of the refrigerant passage. The restriction hole divides the refrigerant passage into an upstream passage and a downstream passage. The upstream passage is formed in either the housing or the passage forming member. The sensor is provided in the passage forming member and detects pressure in the upstream passage and pressure in the downstream passage to sense flow rate of refrigerant in the refrigerant passage. The partition plate is disposed between the housing and the passage forming member. The restriction hole is formed in the partition plate to extend through the partition plate.

Abstract: A semiconductor device includes a first interlayer insulating film formed above a semiconductor substrate, a first source line formed on the first interlayer insulating film, a second interlayer insulating film formed on the first source line, a plurality of bit lines formed on the second interlayer insulating film so as to extend in a direction, the bit lines being arranged at same width and same width, a third interlayer insulating film formed above the bit lines, a second source line formed on the third interlayer insulating film, and a source shunt line formed between the second and third interlayer insulating films, the source shunt line electrically connecting the first and second source lines to each other, the source shunt line being located between the bit lines so as to extend in the same direction as the bit lines, the source shunt line including a width same as the bit lines.

Abstract: An ESD protection circuit for a semiconductor device including a bonding pad receiving a first power supply voltage; an interconnect layer provided in an underside of the bonding pad so as to be electrically conductive with the bonding pad; a semiconductor substrate provided with a first well of a predetermined conductive type in a predetermined region of a surface layer of the substrate, which first well receives a second power supply voltage having a different voltage from the first power supply voltage and provided with a confronting region confronting the underside of the interconnect layer over a dielectric layer, and the first well of the semiconductor substrate, the dielectric layer, the bonding pad and the interconnect layer constitute a capacitor.