Abstract: A chip-type circuit component comprising a chip body which is formed by bonding first and second substrates with each other. A polyimide adhesion layer is provided between the first and second substrates and a thin film circuit pattern is formed on at least one of a pair of main surfaces of the first and second substrates which are opposite each other, while an external electrode is formed on an end surface of the chip body to be electrically connected with the thin film circuit pattern.

Abstract: Inexpensive methods for producing small-sized monolithic electronic parts with improved functions by which an electroconductive film can be formed uniformly, thin, and in fine patterns on a ceramic green sheet, a carrier film, or a resin film, for example. A plurality of such ceramic green sheets, etc., each having the electroconductive film formed thereon, are laminated to give a ceramic laminate, which is then sintered. The electroconductive film is formed on each ceramic green sheet, etc.

Abstract: There is provided a method of forming a conductive film having a predetermined pattern in hybrid ICs, high frequency dielectric filters and the like which makes it possible to safely and efficiently perform a series of the steps of preparing an activating catalytic solution for forming a photoreactive film on a base, forming the photoreactive film through the application of the activating catalytic solution, producing an activating catalyst by exposing particular regions of the photoreactive film, developing by flushing away the photoreactive film in unexposed regions, and immersing the base in an electroless plating bath without using an organic solvent and which allows the formation of a plating film having high electrical conductivity and high strength of adherence. A hydrophilic activating catalytic solution is used which is obtained by dissolving copper oxalate, a palladium salt such as palladium chloride into an alkaline solution such as ammonia.

Abstract: There is provided a method of forming a conductive film having a predetermined pattern in hybrid ICs, high frequency dielectric filters and the like which makes it possible to safely and efficiently perform a series of the steps of preparing an activating catalytic solution for forming a photoreactive film on a base, forming the photoreactive film through the application of the activating catalytic solution, producing an activating catalyst by exposing particular regions of the photoreactive film, developing by flushing away the photoreactive film in unexposed regions, and immersing the base in an electroless plating bath without using an organic solvent and which allows the formation of a plating film having high electrical conductivity and high strength of adherence. A hydrophilic activating catalytic solution is used which is obtained by dissolving copper oxalate, a palladium salt such as palladium chloride into an alkaline solution such as ammonia.

Abstract: Disclosed is an activating catalytic solution for electroless plating which makes possible carrying out successive processes efficiently, without using organic solvent, involving preparation of activating catalytic solution for forming substrate film, formation of a photo-sensitive film by providing the activating catalytic solution, creation of activating catalyst by exposure of specific areas of the photo-sensitive film to light, development by rinsing unexposed portions of the photo-sensitive film, and immersion of the substrate in an electroless plating bath. The activating catalyst can be created with high sensitivity to light at small energy of radiation. The activating catalytic solution preferably contains zinc oxalate, a copper salt, palladium salt such as palladium chloride, and an alkaline solution such as an ammonia water. The activating catalytic solution is used for forming a photo-sensitive film on a substrate to be subjected to electroless plating.

Abstract: A chip-type circuit component comprising a chip body which is formed by bonding first and second substrates with each other. A polyimide adhesion layer is provided between the first and second substrates and a thin film circuit pattern is formed on at least one of a pair of main surfaces of the first and second substrates which are opposite each other, while an external electrode is formed on an end surface of the chip body to be electrically connected with the thin film circuit pattern.

Abstract: A chip coil includes an insulating substrate on which a spiral coil conductor and first and second terminal electrodes are formed. The coil conductor and the terminal electrodes are made by forming a conductive film on the whole of both main surfaces of the insulating substrate and then etching the same. A first insulation film made of polyimide or polyamide is formed on the insulating substrate so as to cover the coil conductor and the terminal electrodes. The first insulation film is etched such that portions corresponding to the terminal electrodes are removed and a throughhole is formed at a portion corresponding in position to the inner most end of the coil conductor. A further conductive film is formed on the first insulation film and etched so as to form a connecting conductor, the ends of which are respectively connected to the inner most end of the coil conductor and the second terminal electrode through the throughhole.

Abstract: Electrodes are formed on an electronic part by an initial step of forming electrodes on a ceramic substrate, dipping the ceramic substrate in a noble metal solution for activating the surface of the electrodes by the use of a noble metal, and forming a solder layer or a tin layer on the activated surface of the electrode by electroless plating using 3-valence titanium ion as a reducing agent. The electrodes to be formed on the ceramic substrate may be a double layer comprised of a first layer containing silver, silver-palladium, silver-platinum or copper and a second electroless nickel plated layer. In the step of forming a solder layer or a tin layer on the activated surface of the electrode by electroless plating using 3-valence titanium ion a reducing agent, it is preferable to add a metal ion except tin and lead in the plating bath. Preferably, the metal ion added in the plating bath may be alkali earth metal element or may be at least one ion selected from the group consisting of Mg.sup.2+, Ca.sup.

Abstract: Disclosed herein is a method of preparing an InSb thin film, which comprises a step of physically sticking InSb powder onto a major surface of a substrate, and a step of depositing an InSb thin film on the major surface of the substrate provided with the as-stuck InSb powder by a method such as vacuum evaporation.

Abstract: A ferroelectric thin film element 1 constructed by forming a MgO thin film 3 oriented in the direction (100), a lower electrode 4 composed of an alloy thin film of a Ni--Cr--Al system oriented in the direction (100), a ferroelectric thin film 5 composed of a PbTiO.sub.3 thin film oriented in the direction (111), and an upper electrode 6 in this order on a substrate composed of (100) silicon 2.

Abstract: First, an aqueous solution of water soluble compounds or an aqueous solution of water soluble complexes, which is a salt of elements belonging to the 6A, 7A, 1B, 2B, 3B, 4B, 5B, 6B, or 8 group in a periodic table are prepared. The pH of the aqueous solution is adjusted and titanium trichloride is added thereto. The aqueous solution provided with titanium trichloride is stirred at temperature below the boiling point of the solution under atmospheric pressure or under high pressure. Then, by the reducing action of the titanium trichloride, a fine titanium-free powder selected from the group consisting of a metal powder, an alloy powder containing two or more of metals and non-metals, or a compound powder containing two or more of metals and non-metals is obtained.

Abstract: In an electroless plating bath containing bismuth trichloride, a reducing agent and complexing agents, stannous chloride is employed as the reducing agent to enable electroless plating of bismuth, which has generally been regarded as impossible. A preferable composition of the plating bath is 0.08M of bismuth trichloride, 0.34M of sodium citrate, 0.08M of EDTA, 0.20M of nitrilotriacetic acid, and 0.04M of stannous chloride. In plating treatment, the plating bath preferably has a temperature of 60.degree. C. and a pH value of 8.6 to 8.8.

Abstract: In order to provide an electroless plating solution containing trivalent titanium ions for serving as a reductant which can deposit a plating film in a pH range between a weak acid level and a weak alkaline level with excellent stability, carbonate such as sodium carbonate or potassium carbonate is contained in the electroless plating solution.

Abstract: Disclosed herein is an electroless solder plating bath capable of autocatalytically depositing solder on a metal such as copper or nickel or an activated non-conductor base material in an arbitrary film thickness and an arbitrary film composition. This plating bath contains bivalent ions of tin and bivalent ions of lead as metal ions, a complexing agent, and a reductant, while the reductant contains trivalent titanium ions. The plating bath can be used at a temperature of 40.degree. to 80.degree. C., with a pH value of 5.0 to 11.0.

Abstract: A high-frequency inductor comprising an insulating substrate; and a conductive land formed on the insulating substrate, the conductive land comprising at least two thin films formed of different compositions of metals, each of the metals is to be etched by such an etching agent that substantially never removes the other metals, the thin films being accumulated vertically.

Abstract: In an electroless plating bath containing bismuth trichloride, a reducing agent and complexing agents, stannous chloride is employed as the reducing agent to enable electroless plating of bismuth, which has generally been regarded as impossible. A preferable composition of the plating bath is 0.08M of bismuth trichloride, 0.34M of sodium citrate, 0.08M of EDTA, 0.20M of nitrilotriacetic acid, and 0.04M of stannous chloride. In plating treatment, the plating bath preferably has a temperature of 60.degree. C. and a pH value of 8.6 to 8.8.

Abstract: A process of forming an LC composite part. The process includes the steps of: forming a substrate having a capacitor section by laminating ceramic sheets having a plurality of capacitor electrodes formed thereon such that the ceramic sheets and electrode layers alternate, sintering the substrate, forming a plurality of coil sections on the sintered substrate, cutting the substrate into composite parts, and electrically connecting the capacitor electrode layers with the coil section.

Abstract: An electroless plating bath for depositing a metal selected from the group consisting of Ni, Zn, As, Cd, In, Sb, Pb and alloys thereof, which contains a titanium (III) compound as a reducing agent. Typical titanium (III) compounds are titanium halides, cyclopentadienyl complex compounds of titanium (III) ions, titanium sulfate, and titanium hydroxide.

Abstract: A chip coil includes an insulating substrate on which a spiral coil conductor and first and second terminal electrodes are formed. The coil conductor and the terminal electrodes are made by forming a conductive film on the whole of both main surfaces of the insulating substrate and then etching the same. A first insulation film made of polyimide or polyamide is formed on the insulating substrate so as to cover the coil conductor and the terminal electrodes. The first insulation film is etched such that portions corresponding to the terminal electrodes are removed and a throughhole is formed at a portion corresponding in position to the innermost end of the coil conductor. A further conductive film is formed on the first insulation film and etched so as to form a connecting conductor, the ends of which are respectively connected to the innermost end of the coil conductor and the second terminal electrode, through the throughhole.

Abstract: A work holder (12) for holding a workpiece (2) while partially masking the same by use of a mask (18). The workpiece and the mask are elastically pressed against each other by an aggregate (15) of heat-resistant fiber such as metal fiber or ceramic fiber, so that the workpiece and the mask are brought into close contact with each other. This work holder is adapted to form a resistor film (9) on a part of the surface of a chip (2) to form a chip-type resistor (1), for example, by a thin film forming method such as sputtering.