Abstract: A protection circuit for use in a semiconductor apparatus includes a first conductivity type semiconductor substrate, a second conductivity type first diffusion region formed on the semiconductor substrate, and a second conductivity type second diffusion region formed on the semiconductor substrate. The second diffusion region is distanced at a prescribed interval from the first diffusion region. The first diffusion region is electrically connected to a pad for electrically connecting the semiconductor apparatus to an outside region. The second diffusion region is electrically connected to a power supply voltage. At least a portion of each of the first and second diffusion regions is entirely formed right under a pad area having the pad.

Abstract: A highly oxidation-resistant copper powder for conductive paste, which is a copper powder containing not more than 5 wt % of Si, is characterized in that substantially all of the Si is adhered to the surfaces of the copper particles as SiO2-system gel coating film.