Abstract: A thin-film piezoelectric acoustic wave resonator that has a large k2, can trap acoustic energy in a resonating part, does not excite spurious resonance, or can finely adjust resonance frequency and a high-frequency filter using the thin-film piezoelectric acoustic wave resonator are provided without increasing the number of processes. At both ends of a vibrating part (1), fixing parts (8) are physically connected, and between the vibrating part (1) and each of the fixing parts (8), an acoustic insulating part (10) and a phase rotating part (11) are physically connected. As with the vibrating part (1), the acoustic insulating part (10) and the phase rotating part (11) are made up of an upper metal film (3), a piezoelectric thin film, and a lower metal film, and an acoustic wave reflector (6) is provided on each of an upper surface, a lower surface, and side surfaces of the vibrating part (1), the acoustic insulating part (10), and the phase rotating part (11).

Abstract: Boundary acoustic wave devices are both compact and possess excellent temperature stability. Yet these devices have the drawback that the Q value cannot be raised, and a high cost thin-film technology is required. This invention provides a boundary acoustic wave device possessing excellent Q value along with a low cost. A boundary acoustic wave device including a film whose main ingredient is aluminum at a thickness hm, and a shorting reflector (thickness hr) and a IDT with an electrode finger period of lambda, are patterned onto the surface of a theta YX-LN single crystalline piezoelectric substrate; and a silicon oxide film with a thickness h1 and an aluminum nitride film 6 with a thickness h2 are formed on that comb electrode and reflector, wherein: 2.5?hr/??8.5% is obtained.

Abstract: A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

Abstract: The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.

Abstract: A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.

Abstract: A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

Abstract: A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.

Abstract: In a boundary elastic wave resonator formed with a cross finger type transducer (IDT) of a wave length ? of a boundary elastic wave, a silicon oxide film, and an aluminum nitride film above a surface of a ?YX-LN single-crystal piezoelectric substrate having a predetermined cut angle ?, a film thickness h1 and a cut angle ? or the like of the silicon oxide film are optimized. For example, the film thickness h1 and the cut angle ? are made to be 127.5°???129.5° and 20%?h1/??100%.

Abstract: A paper sheet handling apparatus, includes: an identifying unit 20 which forwards and identifies a paper sheet A that is inserted from an opening portion 22 formed in its front plane; a collecting unit 30 which stores the identified paper sheet A; a paying-out unit 40 which stores a paying-out paper sheet B to be paid out to the opening portion 22 in a certain case; a forwarding unit 50 which forwards the paper sheet A and the paying-out paper sheet B, between each of the identifying unit 20, the collecting unit 30 and the paying-out unit 40; an outer frame 10 which holds each unit of the identifying unit 20 disposed on its front side, the forwarding unit 50 disposed on the inner side from it, the collecting unit 30 disposed below these identifying unit 20 and forwarding unit 50 and on the front side, and the paying-out unit 40 disposed on the inner side from the collecting unit 30, in which to the outer frame 10, at least the collecting unit 30 and the paying-out unit 40 are detachably attached from its fron

Abstract: A piezoelectric thin film resonator includes: a piezoelectric thin film; a laminated structure which includes a first metal electrode film and a second metal electrode film that interpose at least a part of the piezoelectric thin film, and which is formed on a substrate; and an acoustic insulating layer which is formed on the substrate at a position corresponding to the laminated structure, wherein the first metal electrode film is formed on the substrate and the second metal electrode film is formed on the first metal electrode film while sandwiching the piezoelectric thin film, and a protection film laminated on the second metal electrode film is provided so as to cover the second metal electrode film.

Abstract: A surface acoustic wave device in the present invention is provided with a piezoelectric substrate, a supporting substrate being jointed to the piezoelectric substrate and including a material different in expansion coefficient from the piezoelectric substrate and an interdigital electrode for exciting a surface acoustic wave, the electrode being arranged on the surface of the piezoelectric substrate. Either the interdigital electrode or the piezoelectric substrate is configured so that the interdigital electrode is 40% or more to 70% or less as long as the piezoelectric substrate in the direction to which a surface acoustic wave propagates.

Abstract: Boundary acoustic wave devices are both compact and possess excellent temperature stability. Yet these devices have the drawback that the Q value cannot be raised, and a high cost thin-film technology is required. This invention provides a boundary acoustic wave device possessing excellent Q value along with a low cost. A boundary acoustic wave device including a film whose main ingredient is aluminum at a thickness hm, and a shorting reflector (thickness hr) and a IDT with an electrode finger period of lambda, are patterned onto the surface of a theta YX-LN single crystalline piezoelectric substrate; and a silicon oxide film with a thickness h1 and an aluminum nitride film 6 with a thickness h2 are formed on that comb electrode and reflector, wherein: 2.5?hr/??8.5% is obtained.

Abstract: A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

Abstract: A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.

Abstract: The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.

Abstract: An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate.

Abstract: The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.

Abstract: A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.

Abstract: A piezoelectric thin film resonator includes: a piezoelectric thin film; a laminated structure which includes a first metal electrode film and a second metal electrode film that interpose at least a part of the piezoelectric thin film, and which is formed on a substrate; and an acoustic insulating layer which is formed on the substrate at a position corresponding to the laminated structure, wherein the first metal electrode film is formed on the substrate and the second metal electrode film is formed on the first metal electrode film while sandwiching the piezoelectric thin film, and a protection film laminated on the second metal electrode film is provided so as to cover the second metal electrode film.

Abstract: A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.