Abstract: A photocurable and thermosetting resin composition comprising (A) a photosensitive prepolymer having a carboxyl group in combination with at least two ethylenically unsaturated double bonds in its molecule, (B) a polymerization initiator, (C) a diluent, (D) an oxetane compound having at least two oxetanyl groups in its molecule, and (E) a curing promotor is developable with an alkaline solution and can be formulated as a one package preparation. Such a photocurable and thermosetting resin composition and a photosensitive dry film prepared by the use thereof are useful as various resist materials and electrical insulating materials, particularly as solder resists for printed circuit boards, interlaminar insulating materials for build-up multi-layer printed circuit boards, and the like.

Abstract: A photocurable and thermosetting resin composition comprises (A) an actinic energy ray-curable resin having at least one structure represented by the following general formula (1), (B) a polymerization initiator, (C) a diluent, and (D) a polyfunctional oxetane compound. The actinic energy ray-curable resin mentioned above can be produced by causing the reaction of (a) a polyfunctional oxetane compound with. (b) an unsaturated monocarboxylic acid and the subsequent reaction of (c) a polybasic acid anhydride with a primary hydroxyl group of the resultant modified oxetane resin (a?). wherein R1 represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms, R2, R3 and R4 independently represent a hydrogen atom, an alkyl group of 1 to 6 carbon atoms, an aryl group, an aralkyl group, a cyano group, a fluorine atom, or a furyl group, and X represents a polybasic acid anhydride residue.

Abstract: The photocurable and thermosetting resin composition of the present invention includes (A) an actinic energy ray-curable resin having at least one structure represented by the following general formula (1), (B) a photopolymerization initiator, (C) a diluent, and (D) a thermosetting component. In the general formula (1), R1 represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms, R2, R3 and R4 independently represent a hydrogen atom, an alkyl group of 1 to 6 carbon atoms, an aryl group, an aralkyl group, a cyano group, a fluorine atom, or a furyl group, and X represents a polybasic acid anhydride residue.

Abstract: A photocurable and thermosetting resin composition comprises (A) an actinic energy ray-curable resin having at least one structure represented by the following general formula (1), (B) a polymerization initiator, (C) a diluent, and (D) a polyfunctional oxetane compound. The actinic energy ray-curable resin mentioned above can be produced by causing the reaction of (a) a polyfunctional oxetane compound with (b) an unsaturated monocarboxylic acid and the subsequent reaction of (c) a polybasic acid anhydride with a primary hydroxyl group of the resultant modified oxetane resin (a?). wherein R1 represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms, R2, R3 and R4 independently represent a hydrogen atom, an alkyl group of 1 to 6 carbon atoms, an aryl group, an aralkyl group, a cyano group, a fluorine atom, or a furyl group, and X represents a polybasic acid anhydride residue.

Abstract: A photocurable and thermosetting resin composition comprising (A) a photosensitive prepolymer having a carboxyl group in combination with at least two ethylenically unsaturated double bonds in its molecule, (B) a polymerization initiator, (C) a diluent, (D) an oxetane compound having at least two oxetanyl groups in its molecule, and (E) a curing promotor is developable with an alkaline solution and can be formulated as a one package preparation. Such a photocurable and thermosetting resin composition and a photosensitive dry film prepared by the use thereof are useful as various resist materials and electrical insulating materials, particularly as solder resists for printed circuit boards, interlaminar insulating materials for build-up multi-layer printed circuit boards, and the like.

Abstract: An unsaturated polyester compound having an ethylenically unsatureated group in its terminal and hydroxymethyl group in its side chain is obtained by the reaction of (a) a compound containing at least two oxetane rings in its molecule with (b) a compound containing at least two carboxyl groups in its molecule and (c) an unsaturated monocarboxylic acid in the presence of a reaction promotor in such a proportion that the ratio of said compound (b) to said compound (a) falls in the range of 0.1<(b)/(a)<1. BY further reacting (d) a polybasic acid anhydride with the resultant unsaturated polyester compound (A′), there is obtained an actinic energy ray-curable resin which is soluble in an aqueous alkaline solution. A photocurable and/or thermosetting composition is obtained by mixing the unsaturated polyester compound (A′) and/or the actinic energy ray-curable resin with a polymerization initiator (B).

Abstract: A photocurable and thermosetting resin composition comprising (A) a photosensitive prepolymer having a carboxyl group in combination with at least two ethylenically unsaturated double bonds in its molecule, (B) a polymerization initiator, (C) a diluent, (D) an oxetane compound having at least two oxetanyl groups in its molecule, and (E) a curing promotor is developable with an alkaline solution and can be formulated as a one package preparation. Such a photocurable and thermosetting resin composition and a photosensitive dry film prepared by the use thereof are useful as various resist materials and electrical insulating materials, particularly as solder resists for printed circuit boards, interlaminar insulating materials for build-up multi-layer printed circuit boards, and the like.

Abstract: An integrated circuit has first and second logic circuits having common input terminals and the same complementary logic function. The first logic circuit has a p-type FET circuit block and an n-type FET circuit block each with a high threshold value, while the second logic circuit has a p-type FET circuit block and an n-type FET circuit block each with a low threshold value. An output switch circuit intervenes between the p-type FET and n-type FET circuit blocks in each logic circuit and controls the power supply connection to each logic circuit. In operation, the output of the second logic circuit is connected to the output terminal to realize a low power consumption. In the standby state, the output of the first logic circuit is connected to the output terminal to realize a low leakage current.

Abstract: A photocurable and thermosetting resin composition comprises (A) an actinic energy ray-curable resin having at least one structure represented by the following general formula (1), (B) a photopolymerization initiator, (C) a diluent, and (D) a thermosetting component.

Abstract: A photocurable and thermosetting resin composition comprises (A) an actinic energy ray-curable resin having at least one structure represented by the following general formula (1), (B) a polymerization initiator, (C) a diluent, and (D) a polyfunctional oxetane compound. The actinic energy ray-curable resin mentioned above can be produced by causing the reaction of (a) a polyfunctional oxetane compound with (b) an unsaturated monocarboxylic acid and the subsequent reaction of (c) a polybasic acid anhydride with a primary hydroxyl group of the resultant modified oxetane resin (a′).

Abstract: An unsaturated monocarboxylic ester compound has at least two structures represented by the following general formula (1): 1

Abstract: A level converter circuit includes two p-channel MOSFETs and two n-channel MOSFETs of gate-grounded type which receive complementary signals from a logic circuit, p-channel cross-coupled FETs, and n-channel cross-coupled FETs. The two FETs constructing each cross-coupled FETs can be driven by complementary inputs by supplying an output of the logic circuit operated on a low voltage and a logically inverted output thereof to each cross-coupled FETs via the gate-grounded FETs, and as a result, the gain characteristic of the cross-coupled FETs can be enhanced. The level converter circuit with low power consumption which has large tolerance for the element characteristic and converts a logic level which is as low as approximately 0.5V to approximately 1V to 3V which is a normal logic level.

Abstract: A semiconductor integrated circuit has a logic circuit operated at a small power supply voltage of about 0.5V, wherein a noise margin of the logic circuit can be set at a larger value even if characteristics of the circuit vary depending upon manufacturing process conditions. Satisfactory speed can be ensured during an operation and power consumption can be reduced during a stand-by time. This is attained by controlling individual potentials of first and second conductivity type wells in which a logic circuit is formed. For this purpose, two voltage supply circuits for controlling voltages of the wells and a logic threshold voltage generator are provided.

Abstract: An integrate circuit has a first and second logic circuits having common input terminals and the same complementary logic function. The first logic circuit has a pMISFET circuit block and an nMISFET circuit block each with a high threshold value, while the second logic circuit has a pMISFET circuit block and an nMISFET circuit block each with a low threshold value. An output switch circuit intervenes between the pMISFET and nMISFET circuit blocks in each logic circuit and controls the power supply connection to each logic circuit. In operation, the output of the second logic circuit is connected to the output terminal to realize a low power consumption. In the standby state, the output of the first logic circuit is connected to the output terminal to realize a low leakage current.

Abstract: A semiconductor integrated circuit has a logic circuit operated at a small power supply voltage of about 0.5V, wherein a noise margin of the logic circuit can be set at a larger value even if characteristics of the circuit vary depending upon manufacturing process conditions. Satisfactory speed can be ensured during an operation and power consumption can be reduced during a stand-by time. This is attained by controlling individual potentials of first and second conductivity type wells in which a logic circuit is formed. For this purpose, two voltage supply circuits for controlling voltages of the wells and a logic threshold voltage generator are provided.

Abstract: A level converter circuit includes two p-channel MOSFETs and two n-channel MOSFETs of gate-grounded type which receive complementary signals from a logic circuit, p-channel cross-coupled FETs, and n-channel cross-coupled FETs. The two FETs constructing each cross-coupled FETs can be driven by complementary inputs by supplying an output of the logic circuit operated on a low voltage and a logically inverted output thereof to each cross-coupled FETs via the gate-grounded FETs, and as a result, the gain characteristic of the cross-coupled FETs can be enhanced. The level converter circuit with low power consumption which has large tolerance for the element characteristic and converts a logic level which is as low as approximately 0.5V to approximately 1V to 3V which is a normal logic level.

Abstract: A MESFET of a GaAs semiconductor device having a p-pocket LDD structure is used for a high-frequency power amplifier of a mobile communication device, in order to decrease current consumption and to increase the continuous operating time of a battery. The high-frequency power amplifier is provided with a gate-bias adjusting feedback element between the drain and gate of the MESFET. Thus, even if there is a great difference between the filled and terminated potentials of the discharge voltage of the battery for supplying electric power to the amplifier, electric power can be supplied near the terminated potential for a long time, so that the mobile communication device can be continuously used for a long time.

Abstract: A novel polyaddition copolymer having repetition units represented by the following general formula: ##STR1## where R: a lower alkyl group, Ar: a bisphenol compound residue, and X: a CH.sub.2 O group or a COO group, is obtained by copolymerization reaction of a bisoxetane compound represented by the following general formula: ##STR2## and a bisphenol compound.

Abstract: A curable composition comprising a polyfunctional oxetane compound and a polyphenol compound or phenol resin, where a quaternary onium salt or Crown ether compound is preferably further contained as a curing catalyst, provides a novel use for reactions of the oxetane compound as a 4-membered cyclic ether compound.

Abstract: In order to minimize the chip area and improve the linear characteristics obtained when large signals are inputted, a high frequency switch device comprises first, second and third terminals (3, 4, 6); a first circuit composed of a first FET (11), and a first inductor (21) and a first capacitor (25) both connected with the first FET (11) in parallel to each other, one end of the first circuit being connected to the first terminal (3); and a second circuit composed of a second FET (12), and a second inductor (22) and a second capacitor (26) both connected with the second FET (12) in parallel to each other, one end of the second circuit being connected to the first circuit and the other end of the second circuit being connected to the second terminal (4).