Abstract: A silicon nitride-based sintered body containing silicon nitride-based grains, which are silicon nitride grains or sialon grains. In the silicon nitride-based sintered body, when the size of each silicon nitride-based grain is represented by its maximum grain size, the ratio of the number of silicon nitride-based grains having a maximum grain size of 1 ?m or less to the number of the entire silicon nitride-based grains is 70% or higher. Furthermore, in the distribution profile of no. % of silicon nitride-based grains with respect to maximum grain size, the maximum value of no. % (i.e., maximum no. %) of silicon nitride-based grains is 15 no. % or higher. Also disclosed is a cutting insert, which is formed of the silicon nitride-based sintered body.

Abstract: To improve the adhesion resistance and wear resistance of a surface-coated cutting tool. The surface-coated cutting tool includes a tool substrate, and a single-component coating layer composed of a composite nitride of Cr (chromium), Al (aluminum), and V (vanadium) and disposed on the surface of the tool substrate. The composite nitride is characterized by being represented by a compositional formula: CraAlbVcN satisfying the following relations: 0.11?a?0.26; 0.73?b?0.85; 0<c?0.04; and a+b+c?1 (wherein a, b, and c each represent an atomic proportion). The single-component coating layer has both a hexagonal phase and a cubic phase.

Abstract: A silicon nitride-based sintered body containing silicon nitride-based grains, which are formed of sialon grains. In the silicon nitride-based sintered body, when the size of each silicon nitride-based grain is represented by its maximum grain size, the ratio of the number of silicon nitride-based grains having a maximum grain size of 1 ?m or less to the number of the entire silicon nitride-based grains is 70% or higher. Furthermore, in the distribution profile of no. % of silicon nitride-based grains with respect to maximum grain size, the maximum value of no. % (i.e., maximum no. %) of silicon nitride-based grains is 15 no. % or higher. Also disclosed is a cutting insert, which is formed of the silicon nitride-based sintered body.

Abstract: A silicon nitride-based sintered body containing silicon nitride-based grains, which are silicon nitride grains or sialon grains. In the silicon nitride-based sintered body, when the size of each silicon nitride-based grain is represented by its maximum grain size, the ratio of the number of silicon nitride-based grains having a maximum grain size of 1 ?m or less to the number of the entire silicon nitride-based grains is 70% or higher. Furthermore, in the distribution profile of no. % of silicon nitride-based grains with respect to maximum grain size, the maximum value of no. % (i.e., maximum no. %) of silicon nitride-based grains is 15 no. % or higher. Also disclosed is a cutting insert, which is formed of the silicon nitride-based sintered body.

Abstract: To improve the adhesion resistance and wear resistance of a surface-coated cutting tool. The surface-coated cutting tool includes a tool substrate, and a single-component coating layer composed of a composite nitride of Cr (chromium), Al (aluminum), and V (vanadium) and disposed on the surface of the tool substrate. The composite nitride is characterized by being represented by a compositional formula: CraAlbVcN satisfying the following relations: 0.11?a?0.26; 0.73?b?0.85; 0<c?0.04; and a+b+c?1 (wherein a, b, and c each represent an atomic proportion). The single-component coating layer has both a hexagonal phase and a cubic phase.

Abstract: A sialon sintered body and a cutting insert each having thermal shock resistance and VB wear resistance. The sialon sintered body and the cutting insert contain ?-sialon and 21R-sialon and exhibit an X-ray diffraction peak intensity ratio [(I21R/IA)×100] of 5% or greater and smaller than 30%, wherein IA represents the sum of the peak intensities of the sialon species, and I21R represents the peak intensity of 21R-sialon, the ratio being calculated from the peak intensities of the sialon species obtained by using X-ray diffractometry.

Abstract: Provided are a light source device capable of effectively coping with a luminance change in a light guide plate caused by a variation in an interval between a light source and the light guide plate at a low cost, and a display apparatus. A light source device which includes a light guide plate for emitting light made incident on one side surface from one surface thereof, is configured so as to, for the luminance change due to a change in an interval between a light source disposed on the one side surface side of the light guide plate and the light guide plate, previously increase only an average luminance of the light source side (one side surface side) in which an influence of the luminance change is largest.

Abstract: A sialon sintered body and a cutting insert each having thermal shock resistance and VB wear resistance. The sialon sintered body and the cutting insert contain ?-sialon and 21R-sialon and exhibit an X-ray diffraction peak intensity ratio R[(I21R/IA)×100] of 5% or greater and smaller than 30%, wherein IA represents the sum of the peak intensities of the sialon species, and I21R represents the peak intensity of 21R-sialon, the ratio being calculated from the peak intensities of the sialon species obtained by using X-ray diffractometry.

Abstract: Provided are a light source device capable of effectively coping with a luminance change in a light guide plate caused by a variation in an interval between a light source and the light guide plate at a low cost, and a display apparatus. A light source device which includes a light guide plate for emitting light made incident on one side surface from one surface thereof, is configured so as to, for the luminance change due to a change in an interval between a light source disposed on the one side surface side of the light guide plate and the light guide plate, previously increase only an average luminance of the light source side (one side surface side) in which an influence of the luminance change is largest.

Abstract: To produce an optical recording medium having a good concavo-convex shape whereby optical information recording/retrieving is stabilized. A process for producing an optical recording medium 100 provided with an interlayer 104 having a concavo-convex shape, which comprises a step of forming a recording layer 102 on a substrate 101 directly or via another layer; a step of placing a resin material layer 104a and a stamper 110 having a concavo-convex shape for transfer, in this order on the recording layer 102, and curing the resin material layer 104a in this laminated state to obtain a bonded body 112 comprising the substrate 101, the recording layer 102, the resin material layer 104a and the stamper 110, and a step of separating the stamper 110 from the resin material layer 104a so that the concavo-convex shape for transfer is transferred to the resin material layer 104a, and applying surface modification treatment to promote the curing of the resin material layer 104a, to form the interlayer 104.

Abstract: A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.

Abstract: A cermet insert having a structure composed of a hard phase and a binding phase and, as a sintered body composition, containing Ti, Nb and/or Ta, and W in a total amount of Ti in terms of carbonitride, Nb and/or Ta in terms of carbide and W in terms of carbide of 70 to 95 wt. % of an entirety of the microstructure, and containing W in terms of carbide in an amount of 15 to 35 wt. % of the entirety of the microstructure, the sintered body composition further containing Co and/or Ni. The hard phase has one or two or more of the phases: (1) a first hard phase of a core-having structure whose core portion contains a titanium carbonitride phase and a peripheral portion containing a (Ti, W, Ta/Nb)CN phase, (2) a second hard phase of a core-having structure whose core portion and peripheral portion both contain a (Ti, W, Ta/Nb)CN phase, and (3) a third hard phase of single-phase structure including a titanium cabonitride phase.

Abstract: A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.

Abstract: A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.

Abstract: A device separated from a wafer includes: a chip having a sidewall, which is provided by a dicing surface of the wafer in a case where the device is separated from the wafer; and a protection member disposed on the sidewall of the chip for protecting the chip from being contaminated by a dust from the dicing surface. In the device, the dicing surface of the wafer is covered with the protection member so that the chip is prevented from contaminated with the dust.

Abstract: One aspect of this titanium carbonitride-based cermet insert has a microstructure including 75 to 90 area % of a hard phase and the balance as a binding phase, wherein the hard phase includes a first hard phase in which a core-having structure includes a TiCN phase and a peripheral portion includes a (Ti,W,Ta/Nb)CN phase, a second hard phase including a (Ti,W,Ta/Nb)CN phase, and a third hard phase including a TiCN phase, and the binding phase contains 18 to 33% of Co, 20 to 35% of Ni, 5% or less of Ti and Ta and/or Nb, and 40 to 60 mass % of W.

Abstract: To produce an optical recording medium having a good concavo-convex shape whereby optical information recording/retrieving is stabilized. A process for producing an optical recording medium 100 provided with an interlayer 104 having a concavo-convex shape, which comprises a step of forming a recording layer 102 on a substrate 101 directly or via another layer; a step of placing a resin material layer 104a and a stamper 110 having a concavo-convex shape for transfer, in this order on the recording layer 102, and curing the resin material layer 104a in this laminated state to obtain a bonded body 112 comprising the substrate 101, the recording layer 102, the resin material layer 104a and the stamper 110, and a step of separating the stamper 110 from the resin material layer 104a so that the concavo-convex shape for transfer is transferred to the resin material layer 104a, and applying surface modification treatment to promote the curing of the resin material layer 104a, to form the interlayer 104.

Abstract: One aspect of this titanium carbonitride-based cermet insert has a microstructure including 75 to 90 area % of a hard phase and the balance as a binding phase, wherein the hard phase includes a first hard phase in which a core-having structure includes a TiCN phase and a peripheral portion includes a (Ti,W,Ta/Nb)CN phase, a second hard phase including a (Ti,W,Ta/Nb)CN phase, and a third hard phase including a TiCN phase, and the binding phase contains 18 to 33% of Co, 20 to 35% of Ni, 5% or less of Ti and Ta and/or Nb, and 40 to 60 mass % of W.

Abstract: A semiconductor device includes a substrate, an element formed in the substrate, an insulation film formed on the substrate, wiring layers, and an electrode pad. The wiring layers are multilayered and electrically coupled to the element through the insulation film. The electrode pad is electrically coupled to a top wiring layer of the wiring layers. The top wiring layer is configured to be a top wiring-electrode layer that doubles as an electrode layer disposed under the electrode pad. The electrode layer of the top wiring-electrode layer is disposed directly above the element. The electrode pad and the electrode layer are multilayered to form a pad structure.

Abstract: A cermet insert having a structure composed of a hard phase and a binding phase and, as a sintered body composition, containing Ti, Nb and/or Ta, and W in a total amount of Ti in terms of carbonitride, Nb and/or Ta in terms of carbide and W in terms of carbide of 70 to 95 wt. % of an entirety of the microstructure, and containing W in terms of carbide in an amount of 15 to 35 wt. % of the entirety of the microstructure, the sintered body composition further containing Co and/or Ni. The hard phase has one or two or more of the phases: (1) a first hard phase of a core-having structure whose core portion contains a titanium carbonitride phase and a peripheral portion containing a (Ti, W, Ta/Nb)CN phase, (2) a second hard phase of a core-having structure whose core portion and peripheral portion both contain a (Ti, W, Ta/Nb)CN phase, and (3) a third hard phase of single-phase structure including a titanium cabonitride phase.