Abstract: In a semiconductor device having a solid state image sensing device of the present invention, a p-type well region 2a in which a plurality of unit cells, each having a photodiode PD, are formed and a p-type well region 2b in which a peripheral circuit element is formed are installed in a separated manner. Thus, it is possible to prevent a hot carrier, transition metals, etc. within the peripheral circuit region from invading the pixel region more effectively. Consequently, it becomes possible to provide a semiconductor device having a solid state image sensing device and a manufacturing method thereof, which can improve the pixel characteristic.

Abstract: An information retrieval apparatus that enables users to search information with regionality is provided. When a user inputs search terms for searching, a place-name is extracted from the search terms. Furthermore, the apparatus extracts another place-name of a region that is judged to be within a reachable area from the region indicated by the extracted place-name. Regional information is searched using the extracted place-name and the selected place-name. The user may search life-related information with regionality at his/her residence. The user registers the items of the life-related information beforehand. When the user moves to a new address, the apparatus searches life-related information of the new address based on the registered items and presents the updated information to the user.

Abstract: A silicide layer in direct contact with a gate electrode layer of a MOS transistor is formed only in a contact hole reaching the gate electrode layer, and is located only in the bottom portion of the contact hole. Thereby, increase in gate interconnection resistance is prevented, and thereby decrease in drive power of the transistor can be prevented.

Abstract: A traffic statistical processing unit of a switching processor measures a load to be relayed on a network, and the measured load data is exchanged between apparatus. A statistical data recorder records load data to be relayed over the network, respectively of each of other apparatus and each terminal and received from the traffic statistical processor unit. A terminal address table records as an entry a source address of each terminal from which data is relayed over the network. A filtering condition setter judges from the load data of the recorder whether the load of the apparatus is largest or relatively large, and if the load is largest or relatively large, determining an entry being passed to other apparatus having a smallest or relatively small load. A terminal table manager notifies the entry determined by the condition setter to the other apparatus and deleting the entry from the terminal address table.

Abstract: A magnetoresistive film is disclosed which has a layered structure comprising a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic conductive layer interposed between the first and second ferromagnetic layers, and an antiferromagnetic layer coupled with one of the first and second ferromagnetic layers. The antiferromagnetic layer comprises an antiferromagnetic material selected from an antimony-base alloy, fluoride, an FeRh-base alloy, FeS, an IrMnCo-base alloy and a CrAl-base alloy.

Abstract: A magnetoresistive element is obtained which can exhibit a larger MR change than conventional.The magnetoresistive element is characterized as comprising a multilayer film 3 having a multilayer structure in which a nonmagnetic conductive layer 5 is interposed between a pair of ferromagnetic layer 4, 6, a pair of electrodes 7, 8 which produces a detection current flow through the multilayer film 3, and filter layers 1, 2 comprised of ferromagnetic material and disposed between at least one of the pair of ferromagnetic layers and the electrodes 7, 8 for delivering spin-polarized electrons to the ferromagnetic layers 4, 6, and characterized that a traveling distance of electrons in the ferromagnetic layers 4, 6 is maintained shorter than a spin diffusion length.

Abstract: There is described a semiconductor device intended to increase a degree of integration of transistor without impairing a desired element characteristic. An n-type source region and an n-type drain region are formed in a p-well which acts as a substrate region of an NMOS transistor. Further, there are formed a first contact plug to be electrically connected to the n-type source region and a second contact plug to be electrically connected to the n-type drain region. The n-type source region is provided so as to become short-circuited with the p-well. The n-type drain region is provided so as not to become short-circuited with the p-well. The n-type source region is formed so as to become smaller than the n-type drain region.

Abstract: A semiconductor device is provided which is improved to be capable of stably forming a contact hole. A stopper film is provided on a gate electrode. An interlayer insulating film is provided on a semiconductor substrate to cover the gate electrode. The interlayer insulating film and the stopper film are penetrated by a first contact hole which exposes a surface of the gate electrode. The interlayer insulating film is provided with a second contact hole for exposing a surface of an impurity diffusion layer. The stopper film is formed of a material higher in etch selectivity than the interlayer insulating film.

Abstract: Disclosed is a magnetoresistive film which includes an antiferromagnetic layer, a first amorphous ferromagnetic layer, a crystalline ferromagnetic interlayer disposed between the antiferromagnetic layer and the first amorphous ferromagnetic layer, a nonmagnetic conductive layer provided on the first amorphous ferromagnetic layer and a ferromagnetic layer provided on the nonmagnetic conductive layer.

Abstract: A magnetoresistive device has an alloy film, including a ferromagnetic substance and a non-magnetic substance which is not soluble in solid phase in the ferromagnetic substance or is in a eutectic relation with the ferromagentic substance. The ferromagnetic substance forms grains in the non-magnetic substance, and the grains preferably have anisotropic shapes. The non-magnetic substance is conducting. The alloy film is composed of a plurality of alloy film stripes. Alternatively the magneto-resistive device includes a non-magnetic layer arranged between first and second magnetic layers, wherein the non-magnetic layer has 10 to 50 weight percent of grains of a magnetic substance dispersed therein.

Abstract: A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.

Abstract: A magnetoresistive element includes a substrate, a magnetoresistive film arranged on the substrate and prepared from a non-magnetic conductive metal film containing grains consisting of a ferromagnetic metal atom or a ferromagnetic metal alloy dispersed therein so that the grain concentration is varied along the film thickness direction, a pair of current feeding electrodes arranged on the magnetoresistive film, and a pair of voltage reading electrodes arranged on the magnetoresistive film.

Abstract: A magnetoresistive element includes a substrate, and a plurality of fine line structures, which are provided on the substrate to be substantially parallel to each other, and which each have an aspect ratio greater than 1. Each fine line structure has a multilayer structure of a first ferromagnetic layer, a non-magnetic conductive layer and a second ferromagnetic layer. Magnetic moments of the first and second ferromagnetic layers orient antiparallel to each other in a state with no external magnetic field being applied.

Abstract: A magnetoresistive device includes a substrate and a magnetic film which is formed by alternately stacking magnetic and non-magnetic layers with each other on the substrate. The substrate is prepared to have a texture on its surface, and the magnetic film is formed on this substrate so that a texture is formed along the interface between the magnetic and non-magnetic layers. The texture can be an atomic level texture with step features dimensioned dependent upon the lattice constant, or may be an etched texture of features having desired dimensions in a specified range.

Abstract: A magnetoresistance-effect element includes a substrate, and a magnetoresistance-effect film disposed on the substrate. The magnetoresistance-effect film includes an alloy film containing ferromagnetic metal atoms and non-magnetic metal atoms, which have the property relative to each other that they are mutually insoluble in both solid and liquid phases. The magnetoresistance-effect film further includes at least three soft magnetic films arranged as discontinuous areas in contact with the alloy film and magnetically coupled therewith for reducing an operating magnetic field strength of the element.

Abstract: A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.

Abstract: The invention provides a medium and a method suitable for magneto-optical and multiple recording.The medium includes alternate thin layers of a magnetic rare-earth metal and an electrically conductive material, and has "magnetic frozen state" at low temperature. The medium may be magnetized to different ferromagnetic states when heated to different temperatures by a controlled laser beam, under an external magnetic field. The different magnetic states permit of multiple recording.

Abstract: Laser light is irradiated on a multilayered magnetic thin film having a spin-glass characteristic consisting of a rare-earth metal and a conductive material, the film being heated to a predetermined temperature below the spin-glass transition temperature when recording information and heated to a temperature above the spin-glass transition temperature when erasing the information.

Abstract: A process for producing a cushioning laminate is described, comprising melting a laminated sheet comprising (a) a thermoplastic resin substrate sheet and (b) a thermoplastic resin adhesive layer having a heat distortion temperature at least 25.degree. C. lower than that of the thermoplastic resin which constitutes the substrate sheet (a); moving the laminated sheet below an upper mold in such a manner that the substrate sheet (a) faces the upper mold; vacuum molding the laminated sheet using the upper mold to produce a molded article having a desired irregular surface; and then bonding a plate-shaped member, such as a cardboard plate, a metallic or plastic plate, to the adhesive layer (b) of the laminated sheet while the above-molded article is brought into close contact with the upper mold, thereby producing the cushioning laminate having enclosed air pockets. This cushioning laminate is useful as a cushioning material for wrapping.

Abstract: A polyolefin composition comprising: (1) about 70 to about 35% by weight of a polyolefin; (2) about 30 to about 65% by weight of a talc containing a metal content of up to about 0.9% by weight; and (3) based on the total amount of (1) and (2), at least 0.02% by weight of a specific alkyl 3,5-di-t-butyl-4-hydroxy-hydrocinnamate and at least 0.03% by weight of a specific dialkyl thiodipropionate or acetate. A sheet formed from this composition is odor free, has good whiteness, and can be fabricated into food packaging containers by a vacuum or pressure forming technique.